NXP Semiconductors
PMV250EPEA
40 V, P-channel Trench MOSFET
PMV250EPEA All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 20 June 2014 3 / 16
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage - -40 V
V
GS
gate-source voltage
T
j
= 25 °C
-20 20 V
V
GS
= -10 V; T
amb
= 25 °C [1] - -1.5 AI
D
drain current
V
GS
= -10 V; T
amb
= 100 °C [1] - -1 A
I
DM
peak drain current T
amb
= 25 °C; single pulse; t
p
≤ 10 µs - -6 A
E
DS(AL)S
non-repetitive drain-source
avalanche energy
T
j(init)
= 25 °C; I
D
= -0.26 A; DUT in
avalanche (unclamped)
- 5.5 mJ
[2] - 480 mWT
amb
= 25 °C
[1] - 890 mW
P
tot
total power dissipation
T
sp
= 25 °C - 6250 mW
T
j
junction temperature -55 150 °C
T
amb
ambient temperature -55 150 °C
T
stg
storage temperature -65 150 °C
Source-drain diode
I
S
source current T
amb
= 25 °C [1] - -0.9 A
ESD maximum rating
V
ESD
electrostatic discharge voltage HBM [3] - 1000 V
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm
2
.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Measured between all pins.
