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PMV250EPEAR

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17
NXP Semiconductors
PMV250EPEA
40 V, P-channel Trench MOSFET
PMV250EPEA All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 20 June 2014 6 / 16
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
drain-source
breakdown voltage
I
D
= -250 µA; V
GS
= 0 V; T
j
= 25 °C -40 - - V
V
GSth
gate-source threshold
voltage
I
D
= -250 µA; V
DS
= V
GS
; T
j
= 25 °C -1 -1.7 -2.5 V
V
DS
= -40 V; V
GS
= 0 V; T
j
= 25 °C - - -1 µAI
DSS
drain leakage current
V
DS
= -40 V; V
GS
= 0 V; T
j
= 150 °C - - -20 µA
V
GS
= 20 V; V
DS
= 0 V; T
j
= 25 °C - - 10 µAI
GSS
gate leakage current
V
GS
= -20 V; V
DS
= 0 V; T
j
= 25 °C - - -10 µA
V
GS
= -10 V; I
D
= -1.3 A; T
j
= 25 °C - 180 240 mΩ
V
GS
= -10 V; I
D
= -1.3 A; T
j
= 150 °C - 300 400 mΩ
R
DSon
drain-source on-state
resistance
V
GS
= -4.5 V; I
D
= -0.8 A; T
j
= 25 °C - 220 300 mΩ
g
fs
forward
transconductance
V
DS
= -5 V; I
D
= -2 A; T
j
= 25 °C - 4.5 - S
R
G
gate resistance f = 1 MHz - 19 - Ω
Dynamic characteristics
Q
G(tot)
total gate charge - 4.7 6 nC
Q
GS
gate-source charge - 0.8 - nC
Q
GD
gate-drain charge
V
DS
= -20 V; I
D
= -1.3 A; V
GS
= -10 V;
T
j
= 25 °C
- 0.7 - nC
C
iss
input capacitance - 293 450 pF
C
oss
output capacitance - 35 - pF
C
rss
reverse transfer
capacitance
V
DS
= -20 V; f = 1 MHz; V
GS
= 0 V;
T
j
= 25 °C
- 20 - pF
t
d(on)
turn-on delay time - 4 6 ns
t
r
rise time - 6 - ns
t
d(off)
turn-off delay time - 26 39 ns
t
f
fall time
V
DS
= -20 V; I
D
= -1.3 A; V
GS
= -10 V;
R
G(ext)
= 15 Ω; T
j
= 25 °C
- 14 - ns
Source-drain diode
V
SD
source-drain voltage I
S
= -0.86 A; V
GS
= 0 V; T
j
= 25 °C - -0.8 -1.2 V
NXP Semiconductors
PMV250EPEA
40 V, P-channel Trench MOSFET
PMV250EPEA All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 20 June 2014 7 / 16
V
DS
(V)
0 -4.0-3.0-1.0 -2.0
aaa-011996
-2
-4
-6
I
D
(A)
0
-3.0 V
V
GS
= -2.5 V
-3.5 V
-4.5 V
-10.0 V
T
j
= 25 °C
Fig. 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
aaa-011997
V
GS
(V)
0 -3-2-1
-10
-4
-10
-5
-10
-3
I
D
(A)
-10
-6
min typ
max
T
j
= 25 °C; V
DS
= -5 V
Fig. 7. Sub-threshold drain current as a function of
gate-source voltage
aaa-011998
I
D
(A)
0 -6-4-2
0.4
0.6
0.2
0.8
1.0
R
DSon
(Ω)
0
-3.0 V
V
GS
= -10 V
-3.5 V
-4.5 V
-2.5 V
T
j
= 25 °C
Fig. 8. Drain-source on-state resistance as a function
of drain current; typical values
V
GS
(V)
0 -10-8-4 -6-2
aaa-011999
0.4
0.6
0.2
0.8
1.0
R
DSon
(Ω)
0
T
j
= 150 °C
T
j
= 25 °C
I
D
= -1.3 A
Fig. 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values
NXP Semiconductors
PMV250EPEA
40 V, P-channel Trench MOSFET
PMV250EPEA All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 20 June 2014 8 / 16
V
GS
(V)
0 -5-4-2 -3-1
aaa-012000
-2
-4
-6
I
D
(A)
0
T
j
= 150 °C T
j
= 25 °C
V
DS
> I
D
× R
DSon
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
T
j
(°C)
-60 1801200 60
aaa-012001
1.0
0.5
1.5
2.0
a
0
Fig. 11. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
T
j
(°C)
-60 1801200 60
aaa-012002
-1
-2
-3
V
GS(th)
(V)
0
min
typ
max
I
D
= -0.25 mA; V
DS
= V
GS
Fig. 12. Gate-source threshold voltage as a function of
junction temperature
V
DS
(V)
10
-1
-10
2
-10-1
aaa-012003
10
2
10
10
3
C
(pF)
1
C
iss
C
oss
C
rss
f = 1 MHz; V
GS
= 0 V
Fig. 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17

PMV250EPEAR

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Description:
MOSFET 40V P-channel Trench MOSFET
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