NXP Semiconductors
PMEG2005AESF
20 V, 0.5 A low VF MEGA Schottky barrier rectifier
PMEG2005AESF All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 13 February 2015 3 / 14
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
R
reverse voltage T
j
= 25 °C - 20 V
I
F
forward current T
sp
≤ 140 °C; δ = 1 - 0.71 A
δ = 0.5; f = 20 kHz; T
amb
= 115 °C;
square wave
[1] - 0.5 AI
F(AV)
average forward current
δ = 0.5; f = 20 kHz; T
sp
= 145 °C;
square wave
- 0.5 A
I
FRM
repetitive peak forward current t
p
≤ 1 ms; δ ≤ 0.25 - 2 A
I
FSM
non-repetitive peak forward
current
t
p
= 8 ms; T
j(init)
= 25 °C; square wave - 4.5 A
[2] - 405 mW
[3] - 660 mW
P
tot
total power dissipation T
amb
≤ 25 °C
[1] - 1200 mW
T
j
junction temperature - 150 °C
T
amb
ambient temperature -55 150 °C
T
stg
storage temperature -65 150 °C
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al
2
O
3
, standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for anode and cathode
1 cm
2
each.
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
[1][2] - - 310 K/W
[1][3] - - 190 K/W
R
th(j-a)
thermal resistance
from junction to
ambient
in free air
[1][4] - - 105 K/W
R
th(j-sp)
thermal resistance
from junction to solder
point
[5] - - 40 K/W
[1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses P
R
are a significant part of the total power losses.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for anode and cathode
1 cm
2
each.
[4] Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
[5] Soldering point of anode tab.
NXP Semiconductors
PMEG2005AESF
20 V, 0.5 A low VF MEGA Schottky barrier rectifier
PMEG2005AESF All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 13 February 2015 4 / 14
aaa-006823
t
p
(s)
10
-3
10
2
10
3
10110
-2
10
-1
10
2
10
3
Z
th(j-a)
(K/W)
10
duty cycle =
1
0.75
0.5
0.33 0.25
0.2
0.1
0.05
0
0.02
0.01
FR4 PCB, standard footprint
Fig. 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-006824
t
p
(s)
10
-3
10
2
10
3
10110
-2
10
-1
10
2
10
3
Z
th(j-a)
(K/W)
10
duty cycle =
1
0.75
0.5
0.33
0.25
0.2
0.1
0.05
0.02
0.01
0
FR4 PCB, mounting pad for anode and cathode 1 cm
2
each
Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
NXP Semiconductors
PMEG2005AESF
20 V, 0.5 A low VF MEGA Schottky barrier rectifier
PMEG2005AESF All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 13 February 2015 5 / 14
aaa-006825
t
p
(s)
10
-3
10
2
10
3
10110
-2
10
-1
10
2
Z
th(j-a)
(K/W)
10
duty cycle = 1
0.75
0.5
0.33
0.25
0.2
0.1
0.05
0.02
0.01
0
Ceramic PCB, Al
2
O
3
, standard footprint
Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

PMEG2005AESFYL

Mfr. #:
Manufacturer:
Nexperia
Description:
Schottky Diodes & Rectifiers 20V 0.5A MEGA Schottky
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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