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PMEG2005AESFYL

P1-P3P4-P6P7-P9P10-P12P13-P15
NXP Semiconductors
PMEG2005AESF
20 V, 0.5 A low VF MEGA Schottky barrier rectifier
PMEG2005AESF All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 13 February 2015 6 / 14
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
V
(BR)R
reverse breakdown
voltage
I
R
= 100 µA; t
p
= 300 µs; δ = 0.02;
T
j
= 25 °C
20 - - V
I
F
= 0.1 mA; t
p
≤ 300 µs; δ ≤ 0.02;
T
j
= 25 °C
- 120 180 mV
I
F
= 1 mA; t
p
≤ 300 µs; δ ≤ 0.02;
T
j
= 25 °C
- 180 250 mV
I
F
= 10 mA; t
p
≤ 300 µs; δ ≤ 0.02;
T
j
= 25 °C
- 245 310 mV
I
F
= 100 mA; t
p
≤ 300 µs; δ ≤ 0.02;
T
j
= 25 °C
- 330 380 mV
I
F
= 200 mA; t
p
≤ 300 µs; δ ≤ 0.02;
T
j
= 25 °C
- 375 420 mV
V
F
forward voltage
I
F
= 500 mA; t
p
≤ 300 µs; δ ≤ 0.02;
T
j
= 25 °C
- 475 550 mV
V
R
= 6 V; T
j
= 25 °C; pulsed - 3.2 - µA
V
R
= 10 V; T
j
= 25 °C; pulsed - 5 25 µA
I
R
reverse current
V
R
= 20 V; T
j
= 25 °C; pulsed - 10 45 µA
V
R
= 1 V; f = 1 MHz; T
j
= 25 °C - 25 - pFC
d
diode capacitance
V
R
= 10 V; f = 1 MHz; T
j
= 25 °C - 10 - pF
t
rr
reverse recovery time I
F
= 500 mA; I
R
= 500 mA;
I
R(meas)
= 100 mA; T
j
= 25 °C
- 1.9 - ns
NXP Semiconductors
PMEG2005AESF
20 V, 0.5 A low VF MEGA Schottky barrier rectifier
PMEG2005AESF All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 13 February 2015 7 / 14
aaa-012776
10
-3
10
-2
10
-1
1
I
F
(A)
10
-4
V
F
(V)
0 0.80.60.2 0.4
(1) (2) (3) (4) (5)
pulsed condition
(1) T
j
= 150 °C
(2) T
j
= 125 °C
(3) T
j
= 85 °C
(4) T
j
= 25 °C
(5) T
j
= −40 °C
Fig. 4. Forward current as a function of forward
voltage; typical values
aaa-012778
10
-1
10
-2
10
-3
10
-4
10
-5
10
-6
10
-7
10
-8
I
R
(A)
10
-9
V
R
(V)
0 20155 10
(1)
(2)
(3)
(4)
(5)
pulsed condition
(1) T
j
= 150 °C
(2) T
j
= 125 °C
(3) T
j
= 85 °C
(4) T
j
= 25 °C
(5) T
j
= −40 °C
Fig. 5. Reverse current as a function of reverse
voltage; typical values
V
R
(V)
0 20168 124
aaa-006877
20
30
10
40
50
C
d
(pF)
0
f = 1 MHz; T
amb
= 25 °C
Fig. 6. Diode capacitance as a function of reverse
voltage; typical values
I
F(AV)
(A)
0 0.80.60.2 0.4
aaa-012780
0.2
0.1
0.3
0.4
P
F(AV)
(W)
0
(1)
(2)
(3)
(4)
T
j
= 150 °C
(1) δ = 0.1
(2) δ = 0.2
(3) δ = 0.5
(4) δ = 1
Fig. 7. Average forward power dissipation as a
function of average forward current; typical
values
NXP Semiconductors
PMEG2005AESF
20 V, 0.5 A low VF MEGA Schottky barrier rectifier
PMEG2005AESF All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 13 February 2015 8 / 14
V
R
(V)
0 20155 10
aaa-008581
60
40
80
100
P
R(AV)
(mW)
0
(1)
(2)
(3)
(4)
T
j
= 125 °C
(1) δ = 1
(2) δ = 0.9
(3) δ = 0.8
(4) δ = 0.5
Fig. 8. Average reverse power dissipation as a
function of reverse voltage; typical values
FR4 PCB, standard footprint
T
j
= 150 °C
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig. 9. Average forward current as a function of
ambient temperature; typical values
FR4 PCB, mounting pad for anode and cathode
1 cm
2
each
T
j
= 150 °C
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig. 10. Average forward current as a function of
ambient temperature; typical values
Ceramic PCB, Al
2
O
3
, standard footprint
T
j
= 150 °C
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig. 11. Average forward current as a function of
ambient temperature; typical values
P1-P3P4-P6P7-P9P10-P12P13-P15

PMEG2005AESFYL

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Manufacturer:
Nexperia
Description:
Schottky Diodes & Rectifiers 20V 0.5A MEGA Schottky
Lifecycle:
New from this manufacturer.
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