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IXBH24N170

P1-P3P4-P5
© 2013 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
V
CES
T
J
= 25°C to 150°C 1700 V
V
CGR
T
J
= 25°C to 150°C, R
GE
= 1MΩ 1700 V
V
GES
Continuous ± 20 V
V
GEM
Transient ± 30 V
I
C25
T
C
= 25°C 60 A
I
C110
T
C
= 110°C 24 A
I
CM
T
C
= 25°C, 1ms 230 A
SSOA V
GE
= 15V, T
VJ
= 125°C, R
G
= 10Ω I
CM
= 50 A
(RBSOA) Clamped Inductive Load V
CES
≤ 1360 V
P
C
T
C
= 25°C 250 W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
T
L
1.6mm (0.062 in.) from Case for 10s 300 °C
T
SOLD
Plastic Body for 10 seconds 260 °C
M
d
Mounting Torque (TO-247) 1.13/10 Nm/lb.in.
Weight TO-268 4 g
TO-247 6 g
DS100190A(03/13)
IXBT24N170
IXBH24N170
Symbol Test Conditions Characteristic Values
(T
J
= 25°C Unless Otherwise Specified) Min. Typ. Max.
BV
CES
I
C
= 250μA, V
GE
= 0V 1700 V
V
GE(th)
I
C
= 250μA, V
CE
= V
GE
2.5 5.0 V
I
CES
V
CE
= 0.8 • V
CES
, V
GE
= 0V 25 μA
T
J
= 125°C 500 μA
I
GES
V
CE
= 0V, V
GE
= ± 20V ±100 nA
V
CE(sat)
I
C
= I
C110
, V
GE
= 15V, Note 1 2.5 V
T
J
= 125°C 2.4 V
V
CES
= 1700V
I
C110
= 24A
V
CE(sat)
≤≤
≤≤
≤ 2.5V
High Voltage, High Gain
BIMOSFET
TM
Monolithic
Bipolar MOS Transistor
Features
z
High Blocking Voltage
z
International Standard Packages
z
Low Conduction Losses
Advantages
z
Low Gate Drive Requirement
z
High Power Density
Applications
z
Switch-Mode and Resonant-Mode
Power Supplies
z
Uninterruptible Power Supplies (UPS)
z
Laser Generators
z
Capacitor Discharge Circuits
z
AC Switches
G = Gate C = Collector
E = Emiiter Tab = Collector
TO-247 (IXBH)
G
E
C (Tab)
C
TO-268 (IXBT)
E
G
C (Tab)
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXBT24N170
IXBH24N170
Symbol Test Conditions Characteristic Values
(T
J
= 25°C Unless Otherwise Specified) Min. Typ. Max.
g
fs
I
C
= I
C110
, V
CE
= 10V, Note 1 15 25 S
C
ies
2790 pF
C
oes
V
CE
= 25V, V
GE
= 0V, f = 1MHz 163 pF
C
res
60 pF
Q
g(on)
140 nC
Q
ge
I
C
= I
C110
, V
GE
= 15V, V
CE
= 0.5 • V
CES
16 nC
Q
gc
60 nC
t
d(on)
33 ns
t
r
82 ns
t
d(off)
315 ns
t
f
750 ns
t
d(on)
35 ns
t
r
155 ns
t
d(off)
325 ns
t
f
960 ns
R
thJC
0.50 °C/W
R
thCS
TO-247 0.21 °C/W
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Resistive Switching Times, T
J
= 125°C
I
C
= I
C110
, V
GE
= 15V
V
CE
= 850V, R
G
= 10Ω
Resistive Switching Times, T
J
= 25°C
I
C
= I
C110
, V
GE
= 15V
V
CE
= 850V, R
G
= 10Ω
Reverse Diode
Symbol Test Conditions Characteristic Values
(T
J
= 25°C Unless Otherwise Specified) Min. Typ. Max.
V
F
I
F
= 24A, V
GE
= 0V 2.8 V
t
rr
1.06 μs
I
RM
26 A
I
F
= 12A, V
GE
= 0V, -di
F
/dt = 100A/μs
V
R
= 100V
TO-247 Outline
Terminals: 1 - Gate 2 - Collector
3 - Emitter
TO-268 Outline
Terminals: 1 - Gate 2,4 - Collector
3 - Emitter
e
∅ P
1 2 3
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A
1
2.2 2.54 .087 .102
A
2
2.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b
1
1.65 2.13 .065 .084
b
2
2.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
© 2013 IXYS CORPORATION, All Rights Reserved
IXBT24N170
IXBH24N170
Fig. 1. Output Characteristics @ T
J
= 25ºC
0
8
16
24
32
40
48
0 0.5 1 1.5 2 2.5 3
V
CE
- Volts
I
C
- Amperes
V
GE
= 25V
19V
15V
13V
11V
9V
5V
7V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
0
50
100
150
200
250
300
0 2 4 6 8 10 12 14 16 18 20
V
CE
- Volts
I
C
-
Amperes
V
GE
= 25V
21V
19V
17V
15V
11V
9V
13V
5V
7V
Fig. 3. Output Characteristics @ T
J
= 125ºC
0
8
16
24
32
40
48
0 0.5 1 1.5 2 2.5 3 3.5
V
CE
- Volts
I
C
- Amperes
V
GE
= 25V
19V
15V
13V
11V
9V
5V
7V
Fig. 4. Dependence of V
CE(sat)
on
Junction Temperature
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
V
CE(sat)
- Normalized
V
GE
= 15V
I
C
= 48A
I
C
= 24A
I
C
= 12A
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5 7 9 11 13 15 17 19 21 23 25
V
GE
- Volts
V
CE
- Volts
I
C
= 48A
T
J
= 25ºC
12A
24A
Fig. 6. Input Admittance
0
10
20
30
40
50
60
70
80
90
100
3456789
V
GE
- Volts
I
C
-
Amperes
T
J
= 125ºC
25ºC
- 40ºC
P1-P3P4-P5

IXBH24N170

Mfr. #:
Buy IXBH24N170
Manufacturer:
Littelfuse
Description:
IGBT Transistors BIMOSFETS 1700V 60A
Lifecycle:
New from this manufacturer.
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