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IXBH24N170

P1-P3P4-P5
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXBT24N170
IXBH24N170
Fig. 7. Transconductance
0
5
10
15
20
25
30
35
40
45
50
0 10 20 30 40 50 60 70 80 90 100 110 120
I
C
- Amperes
g
f s
-
Siemens
T
J
= - 40ºC
25ºC
125ºC
Fig. 9. Gate Charge
0
2
4
6
8
10
12
14
16
0 20 40 60 80 100 120 140
Q
G
- NanoCoulombs
V
GE
- Volts
V
CE
= 850V
I
C
= 24A
I
G
= 10mA
Fig. 11. Reverse-Bias Safe Operating Area
0
10
20
30
40
50
60
200 400 600 800 1000 1200 1400 1600 1800
V
CE
- Volts
I
C
- Amperes
T
J
= 125ºC
R
G
= 10Ω
dv / dt < 10V / ns
Fig. 10. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - PicoFarads
f
= 1 MHz
C
ies
C
oes
C
res
Fig. 12. Maximum Transient Thermal Impedance
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
Fig. 8. Forward Voltage Drop of Intrinsic Diode
0
10
20
30
40
50
60
70
80
0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2
V
F
- Volts
I
F
- Amperes
T
J
= 125ºC
T
J
= 25ºC
© 2013 IXYS CORPORATION, All Rights Reserved
IXBT24N170
IXBH24N170
IXYS REF: B_24N170(6N)9-09-09
Fig. 14. Resistive Turn-on Rise Time
vs. Collector Current
0
50
100
150
200
250
300
350
10 15 20 25 30 35 40 45 50
I
C
- Amperes
t
r
- Nanoseconds
T
J
= 125ºC
T
J
= 25ºC
R
G
= 10Ω , V
GE
= 15V
V
CE
= 850V
Fig. 15. Resistive Turn-on Switching Times
vs. Gate Resistance
100
150
200
250
300
350
400
450
500
10 15 20 25 30 35 40 45 50 55
R
G
- Ohms
t
r
- Nanoseconds
20
30
40
50
60
70
80
90
100
t
d
(
on
)
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 850V
I
C
= 48A
I
C
= 24A
Fig. 16. Resistive Turn-off Switching Times
vs. Junction Temperature
400
500
600
700
800
900
1000
1100
1200
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
260
270
280
290
300
310
320
330
340
t
d
(
off
)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 10Ω, V
GE
= 15V
V
CE
= 850V
I
C
= 48A
I
C
= 24A
Fig. 17. Resistive Turn-off Switching Times
vs. Collector Current
400
500
600
700
800
900
1000
1100
1200
1300
10 15 20 25 30 35 40 45 50
I
C
- Amperes
t
f
- Nanoseconds
240
260
280
300
320
340
360
380
400
420
t
d
(
off
)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 10Ω, V
GE
= 15V
V
CE
= 850V
T
J
= 25ºC, 125ºC
Fig. 13. Resistive Turn-on Rise Time
vs. Junction Temperature
0
50
100
150
200
250
300
350
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 10Ω , V
GE
= 15V
V
CE
= 850V
I
C
= 48A
I
C
= 24A
Fig. 18. Resistive Turn-off Switching Times
vs. Gate Resistance
500
600
700
800
900
1000
1100
1200
1300
1400
1500
10 15 20 25 30 35 40 45 50 55
R
G
- Ohms
t
f
- Nanoseconds
100
200
300
400
500
600
700
800
900
1000
1100
t
d
(
off
)
- Nanoseconds
t
f
t
d(off
)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 850V
I
C
= 48A
I
C
= 24A
P1-P3P4-P5

IXBH24N170

Mfr. #:
Buy IXBH24N170
Manufacturer:
Littelfuse
Description:
IGBT Transistors BIMOSFETS 1700V 60A
Lifecycle:
New from this manufacturer.
Delivery:
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