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DATA SHEET
Product data sheet
Supersedes data of 2002 Oct 04
2004 Feb 03
DISCRETE SEMICONDUCTORS
MMBT3904
NPN switching transistor
db
ook, halfpage
M3D088
2004 Feb 03 2
NXP Semiconductors Product data sheet
NPN switching transistor MMBT3904
FEATURES
Collector current capability I
C
= 200 mA
Collector-emitter voltage V
CEO
= 40 V.
APPLICATIONS
General switching and amplification.
DESCRIPTION
NPN switching transistor in a SOT23 plastic package.
PNP
complement: MMBT3906.
MARKING
Note
1. = p: Made in Hong Kong.
= t: Made in Malaysia.
= W: Made in China.
TYPE NUMBER MARKING CODE
(1)
MMBT3904 7A
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
21
3
MAM255
Top view
2
3
1
Fig.1 Simplified outline (SOT23) and symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER MAX. UNIT
V
CEO
collector-emitter voltage 40 V
I
C
collector current (DC) 200 mA
ORDERING INFORMATION
TYPE NUMBER
PACKAGE
NAME DESCRIPTION VERSION
MMBT3904 plastic surface mounted package; 3 leads SOT23

MMBT3904VL

Mfr. #:
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT MMBT3904/TO-236AB/REEL 11" Q3/
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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