MMBT3904VL Datasheet MMBT3904VL, MMBT3904,215 | P4-P6

2004 Feb 03 3

NXP Semiconductors Product data sheet

NPN switching transistor MMBT3904

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Note

1. Transistor mounted on an FR4 printed-circuit board.

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

collector-base voltage open emitter − 60 V

V

CEO

collector-emitter voltage open base − 40 V

V

EBO

emitter-base voltage open collector − 6 V

I

C

collector current (DC) − 200 mA

I

CM

peak collector current − 200 mA

I

BM

peak base current − 100 mA

P

tot

total power dissipation T

amb

≤ 25 °C; note 1 − 250 mW

T

stg

storage temperature −65 +150 °C

T

j

junction temperature − 150 °C

T

amb

operating ambient temperature −65 +150 °C

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th(j-a)

thermal resistance from junction to ambient note 1 500 K/W

2004 Feb 03 4

NXP Semiconductors Product data sheet

NPN switching transistor MMBT3904

CHARACTERISTICS

T

amb

= 25 °C unless otherwise specified.

Note

1. Pulse test: t

p

≤ 300 µs; δ ≤ 0.02.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

I

CBO

collector cut-off current I

E

= 0; V

CB

= 30 V − 50 nA

I

EBO

emitter cut-off current I

C

= 0; V

EB

= 6 V − 50 nA

h

FE

DC current gain V

CE

= 1 V; see Fig.2; note 1

I

C

= 0.1 mA 60 −

I

C

= 1 mA 80 −

I

C

= 10 mA 100 300

I

C

= 50 mA 60 −

I

C

= 100 mA 30 −

V

CEsat

collector-emitter saturation

voltage

I

C

= 10 mA; I

B

= 1 mA − 200 mV

I

C

= 50 mA; I

B

= 5 mA − 300 mV

V

BEsat

base-emitter saturation voltage I

C

= 10 mA; I

B

= 1 mA 650 850 mV

I

C

= 50 mA; I

B

= 5 mA − 950 mV

C

c

collector capacitance I

E

= I

e

= 0; V

CB

= 5 V; f = 1 MHz − 4 pF

C

e

emitter capacitance I

C

= I

c

= 0; V

BE

= 500 mV;

f

= 1 MHz

− 8 pF

f

T

transition frequency I

C

= 10 mA; V

CE

= 20 V;

f

= 100 MHz

300 − MHz

F noise figure I

C

= 100 µA; V

CE

= 5 V; R

S

= 1 kΩ;

f

= 10 Hz to 15.7 kHz

− 5 dB

Switching times (between 10% and 90% levels); see Fig.3

t

d

delay time I

Con

= 10 mA; I

Bon

= 1 mA;

I

Boff

= −1 mA

− 35 ns

t

r

rise time − 35 ns

t

s

storage time − 200 ns

t

f

fall time − 50 ns

2004 Feb 03 5

NXP Semiconductors Product data sheet

NPN switching transistor MMBT3904

handbook, halfpage

MGU821

h

FE

100

0

200

400

300

500

I

C

(mA)

10

−1

11010

2

10

3

(1)

(2)

(3)

Fig.2 DC current gain; typical values.

V

CE

= 1 V.

(1) T

amb

= 150 °C.

(2) T

amb

= 25 °C.

(3) T

amb

= −55 °C.

Fig.3 Collector current as a function of

collector-emitter voltage.

(1) I

B

= 5 mA.

(2) I

B

= 4.5 mA.

(3) I

B

= 4 mA.

(4) I

B

= 3.5 mA.

(5) I

B

= 3 mA.

(6) I

B

= 2.5 mA.

(7) I

B

= 2 mA.

(8) I

B

= 1.5 mA.

(9) I

B

= 1 mA.

(10) I

B

= 0.5 mA.

handbook, halfpage

I

C

(mA)

062810

V

CE

(V)

4

0

250

150

200

50

100

MGU822

(1) (2) (3) (4) (5) (6) (7)

(8)

(9)

(10)

T

amb

= 25 °C.

handbook, halfpage

MGU823

V

BE

(mV)

400

200

600

1000

800

1200

I

C

(mA)

10

−1

11010

2

10

3

(1)

(2)

(3)

Fig.4 Base-emitter voltage as a function of

collector current.

V

CE

= 1 V.

(1) T

amb

= −55 °C.

(2) T

amb

= 25 °C.

(3) T

amb

= 150 °C.

handbook, halfpage

MGU824

V

BEsat

(mV)

600

1000

400

200

800

1200

I

C

(mA)

10

−1

11010

2

10

3

(1)

(2)

(3)

Fig.5 Base-emitter saturation voltage as a

function of collector current.

I

C

/I

B

= 10.

(1) T

amb

= −55 °C.

(2) T

amb

= 25 °C.

(3) T

amb

= 150 °C.

MMBT3904VL

MMBT3904VL

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