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IS61WV6416BLL-12TLI-TR

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
4 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. B
07/22/09
IS64WV3216BLL
IS61WV3216BLL
DC ELECTRICAL CHARACTERISTICS (OverOperatingRange)
Vd d = 2.5V-3.6V
Symbol Parameter Test Conditions Min. Max. Unit
Vo H OutputHIGHVoltage Vd d = Min.,Io H = –1.0mA 2.3 — V
Vo L OutputLOWVoltage Vd d = Min.,Io L = 1.0mA — 0.4 V
VI H InputHIGHVoltage 2.0 Vd d + 0.3 V
VI L InputLOWVoltage
(1)
–0.3 0.8 V
IL I InputLeakage GND≤ VI n ≤ Vd d
–2 2 µA
IL o OutputLeakage
GND≤ Vo u t ≤ Vd d , OutputsDisabled –2 2 µA
Note:
1. VI L (min.) = –0.3VDC;VI L(min.)=–2.0VAC(pulsewidth2.0ns).Not100%tested.
V
I H (max.) = Vd d + 0.3V dc;VI H (max.) = Vd d + 2.0V Ac(pulsewidth2.0ns).Not100%tested.
DC ELECTRICAL CHARACTERISTICS (OverOperatingRange)
Vd d = 3.3V + 10%
Symbol Parameter Test Conditions Min. Max. Unit
Vo H OutputHIGHVoltage Vd d = Min.,Io H = –4.0mA 2.4 — V
Vo L OutputLOWVoltage Vd d = Min.,Io L = 8.0mA — 0.4 V
VI H InputHIGHVoltage 2 Vd d + 0.3 V
VI L InputLOWVoltage
(1)
–0.3 0.8 V
IL I InputLeakage GND≤ VI n ≤ Vd d
–2 2 µA
IL o OutputLeakage
GND≤ Vo u t ≤ Vd d , OutputsDisabled –2 2 µA
Note:
1. VI L (min.) = –0.3VDC;VI L(min.)=–2.0VAC(pulsewidth2.0ns).Not100%tested.
V
I H (max.) = Vd d + 0.3V dc;VI H (max.) = Vd d + 2.0V Ac(pulsewidth2.0ns).Not100%tested.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 5
Rev. B
07/22/09
IS64WV3216BLL
IS61WV3216BLL
CAPACITANCE
(1)
Symbol Parameter Conditions Max. Unit
cI n Input Capacitance VI n = 0V 6 pF
co u t Input/OutputCapacitance Vo u t = 0V 8 pF
Note:
1.Testedinitiallyandafteranydesignorprocesschangesthatmayaffecttheseparameters.
POWER SUPPLY CHARACTERISTICS
(1)
(OverOperatingRange)
-12 ns -15 ns
Symbol Parameter Test Conditions Options Min. Max. Min. Max. Unit
Ic c Vd d DynamicOperating Vd d = Max., 
c o m .
— 35 — 30 mA
Supply Current Io u t = 0 mA, f = fm A X
I n d .
— 45 — 40
A u t o — 60 — 50
typ.
(2)
— 20 — 20
Ic c 1 OperatingSupply Vd d =Max.,
c o m .
— 5 — 5 mA
Current Iout = 0mA, f = 0
I n d .
— 5 — 5
A u t o — 5 — 5
Is b 2 CMOSStandby Vd d = Max.,
c o m .
— 20 — 20 uA
Current(CMOSInputs) CE ≥ Vd d – 0.2V,
I n d .
— 50 — 50
VI n ≥ Vd d – 0.2V, or
A u t o
— 75 — 75
VI n ≤ 0.2V, f = 0 typ.
(2)
— 6 — 6
Note:
1. At f = f
m A X , address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2.TypicalvaluesaremeasuredatV
d d =2.5V,TA=25
o
C.Not100%tested.
6 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. B
07/22/09
IS64WV3216BLL
IS61WV3216BLL
AC TEST CONDITIONS
Parameter Unit Unit
(2.5V-3.6V) (3.3V + 10%)
InputPulseLevel 0VtoVd d V 0VtoVd d V
InputRiseandFallTimes 1.5ns 1.5ns
InputandOutputTiming Vd d /2 Vd d /2 + 0.05
andReferenceLevel(VRef)
OutputLoad SeeFigures1aand1b SeeFigures1aand1b
AC TEST LOADS
Figure 1a. Figure 1b.
30pF
Including
jig and
scope
Zo=50Ω
OUTPUT
V
Ref
50Ω
319 Ω
5 pF
Including
jig and
scope
353 Ω
OUTPUT
2.5V
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

IS61WV6416BLL-12TLI-TR

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Buy IS61WV6416BLL-12TLI-TR
Manufacturer:
ISSI
Description:
SRAM 1Mb 64Kx16 12ns/3.3v Async SRAM 3.3v
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New from this manufacturer.
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