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NVD3055-150T4G-VF01

P1-P3P4-P6P7-P7
© Semiconductor Components Industries, LLC, 2014
May, 2017 − Rev. 7
1 Publication Order Number:
NTD3055−150/D
NTD3055-150,
NVD3055-150
Power MOSFET
9.0 A, 60 V, N−Channel DPAK/IPAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
• NVD Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
Typical Applications
• Power Supplies
• Converters
• Power Motor Controls
• Bridge Circuits
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage V
DSS
60 Vdc
Drain−to−Gate Voltage (R
GS
= 10 MW)
V
DGR
60 Vdc
Gate−to−Source Voltage
− Continuous
− Non−repetitive (t
p
v10 ms)
V
GS
V
GS
"20
"30
Vdc
Drain Current
− Continuous @ T
A
= 25°C
− Continuous @ T
A
= 100°C
− Single Pulse (t
p
v10 ms)
I
D
I
D
I
DM
9.0
3.0
27
Adc
Apk
Total Power Dissipation @ T
A
= 25°C
Derate above 25°C
Total Power Dissipation @ T
A
= 25°C (Note 1)
Total Power Dissipation @ T
A
= 25°C (Note 2)
P
D
28.8
0.19
2.1
1.5
W
W/°C
W
W
Operating and Storage Temperature Range T
J
, T
stg
−55 to 175 °C
Single Pulse Drain−to−Source Avalanche
Energy − Starting T
J
= 25°C
(V
DD
= 25 Vdc, V
GS
= 10 Vdc,
L = 1.0 mH, I
L
(pk) = 7.75 A, V
DS
= 60 Vdc)
E
AS
30 mJ
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
R
q
JC
R
q
JA
R
q
JA
5.2
71.4
100
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
T
L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. When surface mounted to an FR4 board using 0.5 sq in pad size.
2. When surface mounted to an FR4 board using minimum recommended
pad size.
* The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package, the front side assembly
code may be blank.
9.0 AMPERES, 60 VOLTS
R
DS(on)
= 122 mW (Typ)
N−Channel
D
S
G
1
Gate
3
Source
2
Drain
4
Drain
DPAK
CASE 369C
(SURFACE MOUNT)
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENTS
1
2
3
4
1
Gate
3
Source
2
Drain
4
Drain
IPAK
CASE 369D
(STRAIGHT LEAD)
STYLE 2
1
2
3
4
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
AYWW
3150G
AYWW
3150G
A = Assembly Location*
3150 = Device Code
Y = Year
WW = Work Week
G = Pb−Free Package
www.onsemi.com
NTD3055−150, NVD3055−150
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3)
(V
GS
= 0 Vdc, I
D
= 250 mAdc)
Temperature Coefficient (Positive)
V
(BR)DSS
60
−
−
70.2
−
−
Vdc
mV/°C
Zero Gate Voltage Drain Current
(V
DS
= 60 Vdc, V
GS
= 0 Vdc)
(V
DS
= 60 Vdc, V
GS
= 0 Vdc, T
J
= 150°C)
I
DSS
−
−
−
−
1.0
10
mAdc
Gate−Body Leakage Current (V
GS
= ± 20 Vdc, V
DS
= 0 Vdc) I
GSS
− − ±100 nAdc
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage (Note 3)
(V
DS
= V
GS
, I
D
= 250 mAdc)
Threshold Temperature Coefficient (Negative)
V
GS(th)
2.0
−
3.0
6.4
4.0
−
Vdc
mV/°C
Static Drain−to−Source On−Resistance (Note 3)
(V
GS
= 10 Vdc, I
D
= 4.5 Adc)
R
DS(on)
− 122 150
mW
Static Drain−to−Source On−Voltage (Note 3)
(V
GS
= 10 Vdc, I
D
= 9.0 Adc)
(V
GS
= 10 Vdc, I
D
= 4.5 Adc, T
J
= 150°C)
V
DS(on)
−
−
1.4
1.1
1.9
−
Vdc
Forward Transconductance (Note 3) (V
DS
= 7.0 Vdc, I
D
= 6.0 Adc) g
FS
− 5.4 − mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 25 Vdc, V
GS
= 0 Vdc,
f = 1.0 MHz)
C
iss
− 200 280
pF
Output Capacitance C
oss
− 70 100
Transfer Capacitance C
rss
− 26 40
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
(V
DD
= 48 Vdc, I
D
= 9.0 Adc,
V
GS
= 10 Vdc,
R
G
= 9.1 W) (Note 3)
t
d(on)
− 11.2 25
ns
Rise Time t
r
− 37.1 80
Turn−Off Delay Time t
d(off)
− 12.2 25
Fall Time t
f
− 23 50
Gate Charge
(V
DS
= 48 Vdc, I
D
= 9.0 Adc,
V
GS
= 10 Vdc) (Note 3)
Q
T
− 7.1 15
nC
Q
1
− 1.7 −
Q
2
− 3.5 −
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage (I
S
= 9.0 Adc, V
GS
= 0 Vdc) (Note 3)
(I
S
= 19 Adc, V
GS
= 0 Vdc, T
J
=
150°C)
V
SD
−
−
0.98
0.86
1.20
−
Vdc
Reverse Recovery Time
(I
S
= 9.0 Adc, V
GS
= 0 Vdc,
dI
S
/dt = 100 A/ms) (Note 3)
t
rr
− 28.9 −
ns
t
a
− 21.6 −
t
b
− 7.3 −
Reverse Recovery Stored Charge Q
RR
− 0.036 −
mC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
NTD3055−150, NVD3055−150
www.onsemi.com
3
T
J
= −55°C
T
J
= 100°C
0.6
10
1
100
1000
12
8
16
4
0
20
0
12
231
I
D
, DRAIN CURRENT (AMPS)
0
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
I
D
, DRAIN CURRENT (AMPS)
0
0.1
8
0
4121624
Figure 3. On−Resistance versus
Gate−To−Source Voltage
I
D
, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
I
D
, DRAIN CURRENT (AMPS)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
Figure 5. On−Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
Figure 6. Drain−To−Source Leakage
Current versus Voltage
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
I
DSS
, LEAKAGE (nA)
20
−50 100750−25 125 175
34 7
040302010 60
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
4
8
16
8
V
GS
= 0 V
T
J
= 150°C
T
J
= 100°C
I
D
= 4.5 A
V
GS
= 10 V
V
GS
= 10 V
V
DS
≥ 10 V
T
J
= 25°C
V
GS
= 10 V
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
V
GS
= 9 V
V
GS
= 7 V
5025
56
4675
V
GS
= 8 V
V
GS
= 6 V
V
GS
= 5 V
98
20
0.2
0.3
0.4
0.5
T
J
= −55°C
T
J
= 100°C
T
J
= 25°C
0
0.1
84121624
V
GS
= 15 V
20
0.2
0.3
0.4
0.5
T
J
= −55°C
T
J
= 100°C
T
J
= 25°C
150
0.8
1
1.2
1.4
1.6
1.8
2
2.2
50
T
J
= 125°C
0
P1-P3P4-P6P7-P7

NVD3055-150T4G-VF01

Mfr. #:
Buy NVD3055-150T4G-VF01
Manufacturer:
ON Semiconductor
Description:
MOSFET NFET DPAK 60V 9A 1 50MOHM
Lifecycle:
New from this manufacturer.
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