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NVD3055-150T4G-VF01

P1-P3P4-P6P7-P7
NTD3055−150, NVD3055−150
www.onsemi.com
4
V
GS
V
DS
4
10
6
0
12
4
10
320
20100
C, CAPACITANCE (pF)
0
Q
g
, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation Figure 8. Gate−to−Source and
Drain−to−Source Voltage versus Total Charge
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
1
100
10
10 100
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
R
G
, GATE RESISTANCE (W)
Figure 10. Diode Forward Voltage versus
Current
V
SD
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
I
S
, SOURCE CURRENT (AMPS)
t, TIME (ns)
560
01 6
0.6 0.920.840.760.68 1
6
2
0
8
10
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
160
240
400
25
2
I
D
= 9 A
T
J
= 25°C
Q
2
Q
1
V
GS
Q
T
V
DS
= 30 V
I
D
= 9 A
V
GS
= 10 V
t
r
t
d(off)
t
d(on)
t
f
V
GS
= 0 V
T
J
= 25°C
V
GS
= 0 VV
DS
= 0 V
T
J
= 25°C
C
rss
C
iss
C
oss
C
rss
C
iss
2345
80
480
1555
78
8
16
0.1
100
10 100
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
T
J
, STARTING JUNCTION TEMPERATURE (°C)
E
AS
, SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
I
D
, DRAIN CURRENT (AMPS)
25 1251007550
24
8
0
32
V
GS
= 20 V
SINGLE PULSE
T
C
= 25°C
I
D
= 7.75 A
175150
1
10
1
0.1
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10 ms
10 ms
1 ms
dc
100 ms
NTD3055−150, NVD3055−150
www.onsemi.com
5
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
Figure 13. Thermal Response
t, TIME (s)
10
1
0.00001 0.001 0.01 0.1 100.0001 1
0.1
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
D = 0.5
0.2
0.1
SINGLE PULSE
0.05
0.01
ORDERING INFORMATION
Device Package Shipping
†
NTD3055−150G DPAK
(Pb−Free)
75 Units / Rail
NTD3055−150−1G IPAK
(Pb−Free)
75 Units / Rail
NTD3055−150T4G DPAK
(Pb−Free)
2500 / Tape & Reel
NTD3055−150T4H DPAK
(Halide−Free)
2500 / Tape & Reel
NVD3055−150T4G* DPAK
(Pb−Free)
2500 / Tape & Reel
NVD3055−150T4G−VF01 DPAK
(Pb−Free)
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable.
NTD3055−150, NVD3055−150
www.onsemi.com
6
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C
ISSUE F
5.80
0.228
2.58
0.102
1.60
0.063
6.20
0.244
3.00
0.118
6.17
0.243
ǒ
mm
inches
Ǔ
SCALE 3:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
b
D
E
b3
L3
L4
b2
M
0.005 (0.13) C
c2
A
c
C
Z
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
D 0.235 0.245 5.97 6.22
E 0.250 0.265 6.35 6.73
A 0.086 0.094 2.18 2.38
b 0.025 0.035 0.63 0.89
c2 0.018 0.024 0.46 0.61
b2 0.028 0.045 0.72 1.14
c 0.018 0.024 0.46 0.61
e 0.090 BSC 2.29 BSC
b3 0.180 0.215 4.57 5.46
L4 −−− 0.040 −−− 1.01
L 0.055 0.070 1.40 1.78
L3 0.035 0.050 0.89 1.27
Z 0.155 −−− 3.93 −−−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
MENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
7. OPTIONAL MOLD FEATURE.
12 3
4
H 0.370 0.410 9.40 10.41
A1 0.000 0.005 0.00 0.13
L1 0.114 REF 2.90 REF
L2 0.020 BSC 0.51 BSC
A1
HDETAIL A
SEATING
PLANE
A
B
C
L1
L
H
L2
GAUGE
PLANE
DETAIL A
ROTATED 90 CW5
e
BOTTOM VIEW
Z
BOTTOM VIEW
SIDE VIEW
TOP VIEW
ALTERNATE
CONSTRUCTIONS
NOTE 7
Z
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
P1-P3P4-P6P7-P7

NVD3055-150T4G-VF01

Mfr. #:
Buy NVD3055-150T4G-VF01
Manufacturer:
ON Semiconductor
Description:
MOSFET NFET DPAK 60V 9A 1 50MOHM
Lifecycle:
New from this manufacturer.
Delivery:
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