April 2009 Doc ID 14511 Rev 2 1/15
15
STB80NF55-08T4
STP80NF55-08, STW80NF55-08
N-channel 55 V, 0.0065 , 80 A, TO-220, D
2
PAK, TO-247
STripFET™ Power MOSFET
Features
Standard threshold drive
Application
Switching applications
Description
This Power MOSFET is the latest development of
STMicroelectronics unique “single feature size”
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalance characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
Figure 1. Internal schematic diagram
Type V
DSS
R
DS(on)
max
I
D
STB80NF55-08T4 55 V < 0.008 80 A
STP80NF55-08 55 V < 0.008 80 A
STW80NF55-08 55 V < 0.008 80 A
1
2
3
1
3
TO-247
TO-220
D²PAK
1
2
3
Table 1. Device summary
Order codes Marking Package Packaging
STB80NF55-08T4 B80NF55-08 D²PAK Tape and reel
STP80NF55-08 P80NF55-08 TO-220 Tube
STW80NF55-08 W80NF55-08 TO-247 Tube
www.st.com
Contents STB80NF55-08T4, STP80NF55-08, STW80NF55-08
2/15 Doc ID 14511 Rev 2
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
STB80NF55-08T4, STP80NF55-08, STW80NF55-08 Electrical ratings
Doc ID 14511 Rev 2 3/15
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
DS
Drain-source voltage (V
GS
= 0) 55 V
V
GS
Gate- source voltage ±20 V
I
D
(1)
1. Current limited package
Drain current (continuos) at T
C
= 25 °C 80 A
I
D
(1)
Drain current (continuos) at T
C
= 100 °C 80 A
I
DM
(2)
2. Pulse width limited by safe operating area
Drain current (pulsed) 320 A
P
TOT
Total dissipation at T
C
= 25 °C 300 W
Derating factor 2 W/°C
T
j
T
stg
Operating junction temperature
Storage temperature
-55 to 175 °C
Table 3. Thermal resistance
Symbol Parameter
Value
Unit
D
2
PAK TO-220 TO-247
R
thj-case
Thermal resistance junction-case max 0.5 °C/W
R
thj-amb
Thermal resistance junction-ambient max 35
(1)
1. When mounted on 1 inch
2
FR-4 board, 2 oz Cu
62.5 50 °C/W
T
l
Maximum lead temperature for soldering
purpose
300 °C
Table 4. Avalanche characteristics
Symbol Parameter Max value Unit
I
AR
Avalanche current, repetitive or not-repetitive
(pulse width limited by T
j
max)
40 A
E
AS
Single pulse avalanche energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 30 V)
1000 mJ

STP80NF55-08

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
MOSFET N-Ch 55 Volt 80 Amp
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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