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STP80NF55-08

P1-P3P4-P6P7-P9P10-P12P13-P15
Electrical characteristics STB80NF55-08T4, STP80NF55-08, STW80NF55-08
4/15 Doc ID 14511 Rev 2
2 Electrical characteristics
(T
CASE
= 25 °C unless otherwise specified)
Table 5. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source breakdown
voltage
I
D
= 250 µA, V
GS
= 0 55 V
I
DSS
Zero gate voltage drain
current (V
GS
= 0)
V
DS
= max rating
V
DS
= max rating@125 °C
1
10
µA
µA
I
GSS
Gate body leakage current
(V
DS
= 0)
V
GS
= ±20 V ±100 nA
V
GS(th)
Gate threshold voltage V
DS
= V
GS
, I
D
= 250 µA 2 3 4 V
R
DS(on)
Static drain-source on
resistance
V
GS
= 10 V, I
D
= 40 A 0.0065 0.008 Ω
Table 6. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
g
fs
(1)
1. Pulsed: pulse duration=300 µs, duty cycle 1.5%
Forward transconductance V
DS
=15 V , I
D
= 18 A 40 S
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V
DS
= 25 V, f = 1 MHz,
V
GS
= 0
3740
830
265
pF
pF
pF
Q
g
Q
gs
Q
gd
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
= 27 V, I
D
= 80 A
V
GS
=10 V
(see Figure 14)
112
20
40
155 nC
nC
nC
Table 7. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
t
r
t
d(off)
t
f
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
V
DD
= 27 V, I
D
= 40 A
R
G
=4.7 Ω V
GS
= 10 V
(see Figure 13)
20
110
75
35
ns
ns
ns
ns
STB80NF55-08T4, STP80NF55-08, STW80NF55-08 Electrical characteristics
Doc ID 14511 Rev 2 5/15
Table 8. Source drain diode
Symbol Parameter Test conditions Min Typ. Max Unit
I
SD
Source-drain current 80 A
I
SDM
(1)
1. Pulse width limited by safe operating area
Source-drain current (pulsed) 320 A
V
SD
Forward on voltage I
SD
= 80 A, V
GS
= 0 1.5 V
t
rr
(2)
Q
rr
I
RRM
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 80 A,V
DD
= 25 V
di/dt=100 A/µs,
T
j
=150 °C
(see Figure 18)
80
230
5.7
ns
nC
A
Electrical characteristics STB80NF55-08T4, STP80NF55-08, STW80NF55-08
6/15 Doc ID 14511 Rev 2
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Thermal impedance
Figure 4. Output characteristics Figure 5. Transfer characteristics
Figure 6. Normalized BV
DSS
vs temperature Figure 7. Static drain-source on resistance
P1-P3P4-P6P7-P9P10-P12P13-P15

STP80NF55-08

Mfr. #:
Buy STP80NF55-08
Manufacturer:
STMicroelectronics
Description:
MOSFET N-Ch 55 Volt 80 Amp
Lifecycle:
New from this manufacturer.
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