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MUBW25-06A6

P1-P3P4-P6P7-P8
© 2000 IXYS All rights reserved
1 - 8
Rectifier Brake Inverter
V
RRM
= 1200V V
CES
= 600 V V
CES
= 600 V
I
FAVM
= 11 A I
C25
= 18 A I
C25
= 27.5 A
I
FSM
= 250 A V
CE(sat)
= 2.1 V V
CE(sat)
= 2.1 V
MUBW 25-06 A6
Converter - Brake - Inverter Module (CBI1)
Features
●
NPT IGBT technology
Square RBSOA, no latchup
●
Free wheeling diodes with Hiperfast
and soft recovery behaviour
●
Isolation voltage 2500 V~
●
Built in temperature sense
●
High level of integration:
one module for complete drive
system
●
Direct Copper Bonded Al
2
O
3
ceramic
base plate
Applications
●
AC motor control
●
AC servo and robot drives
Advantages
●
No need of external isolation
●
Easy to mount with two screws
●
Package designed for wave
soldering
●
High temperature and power cycling
capability
Input Rectifier Bridge D8 - D13
Symbol Conditions Maximum Ratings
V
RRM
1200 V
I
F
T
VJ
= 25°C 36 A
I
FAVM
T
VJ
= 150°C; T
K
= 70°C 11 A
I
FSM
T
VJ
= 45°C; t = 10 ms sine 50 Hz 250 A
i²t T
VJ
= 125°C 310 A²s
T
VJ
+150 °C
Symbol Conditions Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min. typ. max.
I
R
V
RRM
= 1200 V; T
VJ
= 25°C 10 µA
T
VJ
= 125°C 3 mA
V
F
I
F
= 36 A 1.15 1.4 V
R
thJC
per die 1.4 °C/W
031
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
2 - 8
Output Inverter T1 - T6, D1 - D6
Symbol Conditions Maximum Ratings
V
CES
T
VJ
= 25°C 600 V
V
CGR
T
VJ
= 25°C; R
GE
= 20kW 600 V
V
GE
T
VJ
= 25°C
±
20 V
I
C
T
C
= 25°C 27.5 A
T
C
= 90°C 16 A
I
CM
t
p
= 1 ms = 1% duty cycle; T
C
= 25°C 55 A
T
C
= 90°C 32 A
t
SC
IGBT V
CE
= 600 V; T
VJ
= 125°C
non-repetitive 10 µs
P
tot
T
C
= 25°C 77 W
T
VJ
Free-Wheeling Diode +150 °C
T
VJ
IGBT +150 °C
Symbol Conditions Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min. typ. max.
I
CES
V
GE
= 0 V; V
CE
= 600 V 1 mA
I
GES
V
CE
= 0 V; V
GE
= 25 V 100 nA
V
GE(th)
V
GE
= V
CE
; I
C
= 0.5 mA 4.5 5.5 6.5 V
V
(BR)CES
V
GE
= 0 V; I
C
= 10 mA; T
VJ
= -40°C 600 V
V
CE(sat)
V
GE
= 15 V; I
C
= 20 A; T
VJ
= 25°C 2.1 2.5 V
T
VJ
= 125°C 2.4 2.8 V
t
f
30 ns
t
r
35 ns
t
d(on)
30 ns
t
d(off)
200 ns
E
off
0.6 mJ
E
on
0.75 mJ
C
iss
1100 pF
C
oss
120 pF
C
rss
72 pF
g
fs
V
CE
= 20 V; I
C
= 20 A 5.5 S
Q
g
V
CC
= 300 V; I
C
= 20 A pulse; V
GE
= 15 V 63 nC
V
F
I
F
= 20 A; V
GE
= 0 V; T
VJ
= 25°C 2 V
T
VJ
= 125°C 1.8 V
t
rr
I
F
= 20 A; V
R
= -300 V; V
GE
= 0 V 0.3 µs
di
F
/dt = -600 A/µs; T
VJ
= 125°C
Q
r
I
F
= 20 A; V
R
= -300 V; T
VJ
= 25°C 0.6 µC
di
F
/dt = -600 A/µs; V
GE
= 0 V; T
VJ
= 125°C 1.7 µC
I
r
250 µA
R
thJC
IGBT (per die) 1.35 °C/W
Diode (per die) 1.7 °C/W
Inductive load, T
VJ
= 125°C
V
CC
= 300 V; I
C
= 20 A
R
G
= 47 W; V
GE
=
±
15 V
V
GE
= 0 V
V
CE
= 25 V
f = 1 MHz
MUBW 25-06 A6
© 2000 IXYS All rights reserved
3 - 8
MUBW 25-06 A6
Brake Chopper T7, D7
Symbol Conditions Maximum Ratings
V
CES
T
VJ
= 25°C 600 V
V
CGR
T
VJ
= 25°C; R
GE
= 20kW 600 V
V
GE
T
VJ
= 25°C
±
20 V
I
C
T
C
= 25°C 18 A
T
C
= 90°C 10 A
I
CM
t
p
= 1 ms = 1% duty cycle; T
C
= 25°C 36 A
T
C
= 50°C 20 A
t
SC
IGBT V
CE
= 600 V; T
VJ
= 125°C
non-repetitive 10 µs
P
tot
T
C
= 25°C 61 W
T
VJ
Free-Wheeling Diode +150 °C
T
VJ
IGBT +150 °C
Symbol Conditions Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min. typ. max.
I
CES
V
GE
= 0 V; V
CE
= 600 V 1 mA
I
GES
V
CE
= 0 V; V
GE
= 25 V 100 nA
V
GE(th)
V
GE
= V
CE
; I
C
= 0.35 mA 4.5 5.5 6.5 V
V
(BR)CES
V
GE
= 0 V; I
C
= 10 mA; T
VJ
= -40°C 600 V
V
CE(sat)
V
GE
= 15 V; I
C
= 10 A;T
VJ
= 25°C 2.1 2.5 V
T
VJ
= 125°C 2.4 2.8 V
t
f
25 ns
t
r
25 ns
t
d(on)
35 ns
t
d(off)
250 ns
E
off
0.38 mJ
E
on
0.58 mJ
C
iss
570 pF
C
oss
80 pF
C
rss
55 pF
g
fs
V
CE
= 20 V; I
C
= 10 A 3 S
Q
g
V
CC
= 300 V; I
C
= 10 A pulse; V
GE
= 15 V 39 nC
V
F
I
F
= 10 A; V
GE
= 0 V; T
VJ
= 25°C 2 V
T
VJ
= 125°C 1.8 V
t
rr
I
F
= 10 A; V
R
= -300 V; V
GE
= 0 V 0.2 µs
di
F
/dt = -350 A/µs; T
VJ
= 100°C
Q
r
I
F
= 10 A; V
R
= -300 V; T
VJ
= 25°C 0.3 µC
di
F
/dt = -350 A/µs; V
GE
= 0 V; T
VJ
= 125°C 0.9 µC
I
r
250 µA
R
thJC
IGBT (per die) 1.7 °C/W
Diode (per die) 2.3 °C/W
Inductive load, T
VJ
= 125°C
V
CC
= 300 V; I
C
= 10 A
R
G
= 100 W; V
GE
=
±
15 V
V
GE
= 0 V
V
CE
= 25 V
f = 1 MHz
P1-P3P4-P6P7-P8

MUBW25-06A6

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Description:
MODULE IGBT CBI E1
Lifecycle:
New from this manufacturer.
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