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MUBW25-06A6

P1-P3P4-P6P7-P8
© 2000 IXYS All rights reserved
7 - 8
MUBW 25-06 A6
IGBT
Z
thJH
[K/W]
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100
t (s)
D = 0
D = 0.005
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
Output Inverter T1 - T6
Transient thermal resistance junction to heatsink
(Z
thJH
is measured using 50 µm
thermal grease)
© 2000 IXYS All rights reserved
8 - 8
MUBW 25-06 A6
Output Inverter D1 - D6
200 600 10000 400 800
70
80
90
100
110
120
0 40 80 120 160
0.0
0.5
1.0
1.5
2.0
K
f
T
VJ
°C
-di
F
/dt
0 200 400 600 800 1000
0
5
10
15
20
0.0
0.4
0.8
1.2
1.6
V
FR
di
F
/dt
V
200 600 10000 400 800
0
10
20
30
40
100 1000
0
500
1000
1500
2000
012
0
10
20
30
40
I
RM
Q
r
I
F
A
V
F
-di
F
/dt
-di
F
/dt
A/ s
A
V
nC
A/ s
A/ s
t
rr
ns
t
fr
A/ s
s
I
F
= 30A
I
F
= 15A
I
F
= 7.5A
T
VJ
= 100°C
V
R
= 300V
T
VJ
= 100°C
I
F
= 15A
Peak reverse current I
RM
versus -di
F
/dt
Reverse recovery charge Q
r
versus -di
F
/dt
Forward current I
F
versus V
F
T
VJ
= 100°C
V
R
= 300V
T
VJ
= 100°C
V
R
= 300V
I
F
= 30A
I
F
= 15A
I
F
= 7.5A
Q
r
I
RM
Dynamic parameters Q
r
, I
RM
versus T
VJ
Recovery time t
rr
versus -di
F
/dt Peak forward voltage V
FR
and t
fr
versus di
F
/dt
I
F
= 30A
I
F
= 15A
I
F
= 7.5A
t
fr
V
FR
T
VJ
=150°C
T
VJ
=100°C
T
VJ
= 25°C
15-06A
FRED
Z
thJH
[K/W]
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100
t(s)
D = 0
D = 0.005
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
(Z
thJH
is measured using 50 µm
thermal grease)
Transient thermal resistance junction to heatsink
P1-P3P4-P6P7-P8

MUBW25-06A6

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Description:
MODULE IGBT CBI E1
Lifecycle:
New from this manufacturer.
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