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BUK6211-75C,118

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com (email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
- © Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
1. Product profile
1.1 General description
Standard and logic level gate drive N-channel enhancement mode Field-Effect Transistor
(FET) in a plastic package using advanced TrenchMOS technology. This product has
been designed and qualified to the appropriate AEC Q101 standard for use in high
performance automotive applications.
1.2 Features and benefits
AEC Q101 compliant
Suitable for intermediate level gate
drive sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V Automotive systems
Electric and electro-hydraulic power
steering
Engine management
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power
switching
1.4 Quick reference data
BUK6211-75C
N-channel TrenchMOS FET
Rev. 02 — 28 September 2010 Product data sheet
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175°C --75V
I
D
drain current V
GS
=10V; T
mb
=25°C;
see Figure 1
--74A
P
tot
total power dissipation T
mb
= 25 °C; see Figure 2 --158W
Static characteristics
R
DSon
drain-source on-state
resistance
V
GS
=10V; I
D
=25A;
T
j
=25°C; see Figure 11
-9.311mΩ
BUK6211-75C All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 28 September 2010 2 of 15
NXP Semiconductors
BUK6211-75C
N-channel TrenchMOS FET
2. Pinning information
3. Ordering information
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source
avalanche energy
I
D
=74A; V
sup
≤ 75 V;
R
GS
=50Ω; V
GS
=10V;
T
j(init)
= 25 °C; unclamped
--127mJ
Dynamic characteristics
Q
GD
gate-drain charge I
D
=25A; V
DS
=60V;
V
GS
= 10 V; see Figure 13;
see Figure 14
-30-nC
Table 1. Quick reference data …continued
Symbol Parameter Conditions Min Typ Max Unit
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 G gate
SOT428 (DPAK)
2 D drain
3Ssource
mb D mounting base; connected to
drain
3
2
mb
1
S
D
G
m
bb076
Table 3. Ordering information
Type number Package
Name Description Version
BUK6211-75C DPAK plastic single-ended surface-mounted package (DPAK); 3 leads
(one lead cropped)
SOT428
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

BUK6211-75C,118

Mfr. #:
Buy BUK6211-75C,118
Manufacturer:
Nexperia
Description:
IGBT Transistors MOSFET N-CHAN 75V 74A
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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