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BUK6211-75C,118

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
BUK6211-75C All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 28 September 2010 6 of 15
NXP Semiconductors
BUK6211-75C
N-channel TrenchMOS FET
6. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
drain-source breakdown
voltage
I
D
=250µA; V
GS
=0V; T
j
=25°C 75--V
I
D
=250µA; V
GS
=0V; T
j
= -55 °C 68 - - V
V
GS(th)
gate-source threshold voltage I
D
=1mA; V
DS
=V
GS
; T
j
=25°C;
see Figure 9; see Figure 10
1.8 2.3 2.8 V
I
D
=1mA; V
DS
=V
GS
; T
j
=-55°C;
see Figure 9
--3.3V
I
D
=1mA; V
DS
=V
GS
; T
j
= 175 °C;
see Figure 9
0.8--V
I
DSS
drain leakage current V
DS
=75V; V
GS
=0V; T
j
= 175 °C - - 500 µA
V
DS
=75V; V
GS
=0V; T
j
= 25 °C - 0.02 1 µA
I
GSS
gate leakage current V
DS
=0V; V
GS
=20V; T
j
= 25 °C - 5 100 nA
V
DS
=0V; V
GS
=-20V; T
j
= 25 °C - 5 100 nA
R
DSon
drain-source on-state
resistance
V
GS
=10V; I
D
=25A; T
j
=25°C;
see Figure 11
-9.311mΩ
V
GS
=4.5V; I
D
=25A; T
j
=25°C;
see Figure 11
-1115mΩ
V
GS
=5V; I
D
=25A; T
j
=25°C;
see Figure 11
- 10.4 13.2 mΩ
V
GS
=10V; I
D
=25A; T
j
= 175 °C;
see Figure 12
- - 28.6 mΩ
Dynamic characteristics
Q
G(tot)
total gate charge I
D
=25A; V
DS
=60V; V
GS
=5V;
see Figure 13
; see Figure 14
-52-nC
I
D
=25A; V
DS
=60V; V
GS
=10V;
see Figure 14; see Figure 13
-81-nC
Q
GS
gate-source charge I
D
=25A; V
DS
=60V; V
GS
=10V;
see Figure 13
; see Figure 14
-11-nC
Q
GD
gate-drain charge - 30 - nC
C
iss
input capacitance V
GS
=0V; V
DS
=25V; f=1MHz;
T
j
=25°C; see Figure 16
- 3938 5251 pF
C
oss
output capacitance - 310 372 pF
C
rss
reverse transfer capacitance - 206 282 pF
t
d(on)
turn-on delay time V
DS
=55V; R
L
=2.2Ω; V
GS
=10V;
R
G(ext)
=10Ω
-18-ns
t
r
rise time - 40 - ns
t
d(off)
turn-off delay time - 165 - ns
t
f
fall time - 80 - ns
L
D
internal drain inductance from upper edge of drain mounting
base to centre of die ; T
j
=25°C
-3.5-nH
L
S
internal source inductance from source lead to source bond pad ;
T
j
=25°C
-7.5-nH
BUK6211-75C All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 28 September 2010 7 of 15
NXP Semiconductors
BUK6211-75C
N-channel TrenchMOS FET
Source-drain diode
V
SD
source-drain voltage I
S
=25A; V
GS
=0V; T
j
=25°C;
see Figure 15
-0.81.2V
t
rr
reverse recovery time I
S
=20A; dI
S
/dt = -100 A/µs;
V
GS
=0V; V
DS
=25V
- 50.5 - ns
Q
r
recovered charge - 105 - nC
Table 6. Characteristics …continued
Symbol Parameter Conditions Min Typ Max Unit
Fig 5. Forward transconductance as a function of
drain current; typical values
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
T
j
= 25°C; t
p
= 300 μs
T
j
= 25°C; I
D
= 25 A
Fig 7. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 8. Drain-source on-state resistance as a function
of gate-source voltage; typical values
003aae411
0
20
40
60
80
100
120
0 20406080100
I
D
(A)
g
fs
(S)
003aae410
0
20
40
60
80
100
120
012345
V
GS
(V)
I
D
(A)
T
j
= 25
°
C
T
j
= 175
°
C
003aae885
0
25
50
75
100
125
01234
V
DS
(V)
I
D
(A)
3.8
V
GS
(V) = 4
4.5
5
6
10
3.3
3.2
3.4
3.6
003aae886
0
10
20
30
40
0246810
V
GS
(V)
R
DSon
(m
Ω
)
BUK6211-75C All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 28 September 2010 8 of 15
NXP Semiconductors
BUK6211-75C
N-channel TrenchMOS FET
Fig 9. Gate-source threshold voltage as a function of
junction temperature
Fig 10. Sub-threshold drain current as a function of
gate-source voltage
T
j
= 25°C; t
p
= 300 µs
Fig 11. Drain-source on-state resistance as a function
of drain current; typical values
Fig 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
003aad805
0
1
2
3
4
-60 0 60 120 180
T
j
(
°
C)
V
GS(th)
(V)
max
typ
min
003aad806
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
01234
V
GS
(V)
I
D
(A)
max
typ
min
003aae887
0
10
20
30
40
0 25 50 75 100 125
I
D
(A)
R
DSon
(m
Ω
)
3.2
3.6
4.5
3.4
3.8
V
GS
(V) = 5, 6, 10
4
003aad804
0
0.5
1
1.5
2
2.5
3
-60 0 60 120 180
T
j
(
°
C)
a
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BUK6211-75C,118

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Buy BUK6211-75C,118
Manufacturer:
Nexperia
Description:
IGBT Transistors MOSFET N-CHAN 75V 74A
Lifecycle:
New from this manufacturer.
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