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NMLU1210TWG

P1-P3P4-P6P7-P9
I
CE
, COLLECTOR TO EMITTER CURRENT (A) I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current FIGURE 10, Turn-Off Delay Time vs Collector Current
I
CE
, COLLECTOR TO EMITTER CURRENT (A) I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current FIGURE 12, Current Fall Time vs Collector Current
I
CE
, COLLECTOR TO EMITTER CURRENT (A) I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current FIGURE 14, Turn Off Energy Loss vs Collector Current
R
G
, GATE RESISTANCE (OHMS) T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 15, Switching Energy Losses vs. Gate Resistance FIGURE 16, Switching Energy Losses vs Junction Temperature
SWITCHING ENERGY LOSSES mJ) E
ON2
, TURN ON ENERGY LOSS (μJ) t
r,
RISE TIME (ns) t
d(ON)
, TURN-ON DELAY TIME (ns)
SWITCHING ENERGY LOSSES (mJ) E
OFF
, TURN OFF ENERGY LOSS (μJ) t
f,
FALL TIME (ns) t
d
(OFF)
, TURN-OFF DELAY TIME (ns)
0 20 40 60 80 100 120 0 20 40 60 80 100 120
0 20 40 60 80 100 120 0 20 40 60 80 100 120
0 20 40 60 80 100 120 0 20 40 60 80 100 120
0 10 20 30 40 50 0 25 50 75 100 125
20
18
16
14
12
10
8
6
4
2
0
100
80
60
40
20
0
6000
5000
4000
3000
2000
1000
0
10
8
6
4
2
0
300
250
200
150
100
50
0
80
70
60
50
40
30
20
10
0
2500
2000
1500
1000
500
0
6
5
4
3
2
1
0
V
GE
=15V,T
J
=125°C
V
GE
=15V,T
J
=25°C
V
CE
= 400V
R
G
= 4.7Ω
L = 100μH
V
CE
= 400V
V
GE
= +15V
R
G
= 4.7Ω
R
G
= 4.7Ω, L = 100μH, V
CE
= 400V
V
CE
= 400V
T
J
= 25°C, T
J
=125°C
R
G
= 4.7Ω
L = 100μH
V
GE
= 15V
T
J
= 125°C, V
GE
= 15V
T
J
= 25 or 125°C,V
GE
= 15V
T
J
= 25°C, V
GE
= 15V
T
J
= 125°C,V
GE
=15V
T
J
= 25°C,V
GE
=15V
V
CE
= 400V
V
GE
= +15V
R
G
= 4.7Ω
T
J
= 125°C, V
GE
= 15V
T
J
= 25°C, V
GE
= 15V
V
CE
= 400V
V
GE
= +15V
R
G
= 4.7Ω
E
on2,
100A
E
off,
100A
E
off
,
50A
E
on2
,
50A
E
on2
,
25A
E
off,
25A
E
on2,
100A
E
off,
100A
E
on2,
50A
E
off,
50A
E
on2,
25A
E
off,
25A
V
CE
= 400V
V
GE
= +15V
T
J
= 125°C
R
G
= 4.7Ω, L = 100μH, V
CE
= 400V
TYPICAL PERFORMANCE CURVES
APT50GS60B_SRDQ2(G)
052-6300 Rev B 3-2012
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
I
C
, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
Z
θ
JC
, THERMAL IMPEDANCE (°C/W)
F
MAX
, OPERATING FREQUENCY (kHz)
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V) V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
Figure 17, Forward Safe Operating Area Figure 18, Maximum Forward Safe Operating Area
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
1 10 100 800 1 10 100 800
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
200
100
10
1
0.1
200
100
10
1
0.1
Scaling for Different Case & Junction
Temperatures:
I
C
= I
C(T
C
= 25
°
C)
*(T
J
- T
C
)/125
T
J
= 150°C
T
C
= 25°C
1ms
100ms
V
CE(on)
DC line
100μs
I
CM
10ms
13μs
T
J
= 125°C
T
C
= 75°C
1ms
100ms
V
CE(on)
DC line
100μs
I
CM
10ms
13μs
Peak T
J
= P
DM
x Z
θJC
+
T
C
Duty Factor D =
t
1
/
t
2
t
2
t
1
P
DM
Note:
T
J
= 125°C
T
C
= 75°C
D = 50 %
V
CE
= 400V
R
G
= 4.7Ω
75°C
100°C
0.3
0.9
0.7
SINGLE PULSE
0.5
0.1
0.05
F
max
= min (f
max
, f
max2
)
0.05
f
max1
=
t
d(on)
+ t
r
+ t
d(off)
+ t
f
P
diss
- P
cond
E
on2
+ E
off
f
max2
=
P
diss
=
T
J
- T
C
R
θJC
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
0 10 20 30 40 50 60 70 80 90
160
140
120
100
80
60
40
20
0
APT50GS60B_SRDQ2(G)
052-6300 Rev B 3-2012
TYPICAL PERFORMANCE CURVES
I
C
A
D.U.T.
V
CE
V
CC
Figure 23, Turn-off Switching Waveforms and Defi nitions
Figure 22, Turn-on Switching Waveforms and Defi nitions
Figure 21, Inductive Switching Test Circuit
T
J
= 125°C
Collector Current
Collector Voltage
Gate Voltage
Switching Energy
5%
10%
t
d(on)
90%
10%
t
r
5%
T
J
= 125°C
Collector Voltage
Collector Current
Gate Voltage
Switching Energy
0
90%
t
d(off)
10%
t
f
90%
APT40DQ60
FOOT NOTE:
1
Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
3
Short circuit time: V
GE
= 15V, V
CC
≤ 600V, T
J
≤ 150°C
4 Pulse test: Pulse width < 380μs, duty cycle < 2%
5
C
o(cr)
is defi ned as a fi xed capacitance with the same stored charge as C
oes
with V
CE
= 67% of
V
(BR)CES
.
6 C
o(er)
is defi ned as a fi xed capacitance with the same stored energy as C
oes
with V
CE
= 67% of
V
(BR)CES
. To calculate C
o(er)
for any value of
V
CE
less than V
(BR)CES
, use this equation: C
o(er)
= 5.57E-8/V
DS
^2 + 7.15E-8/V
DS
+ 2.75E-10.
7
R
G
is external gate resistance, not including internal gate resistance or gate driver impedance (MIC4452).
8 E
on1
is the inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the
IGBT turn-on switching loss. It is measured by clamping the inductance with a Silicon Carbide Schottky diode.
9 E
on2
is the inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on energy.
10 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1.
Microsemi reserves the right to change, without notice, the specifi cations and information contained herein.
APT50GS60B_SRDQ2(G)
052-6300 Rev B 3-2012
P1-P3P4-P6P7-P9

NMLU1210TWG

Mfr. #:
Buy NMLU1210TWG
Manufacturer:
ON Semiconductor
Description:
MOSFET Dual N-Channel Full BridgeRectifierUDFN8
Lifecycle:
New from this manufacturer.
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