NMLU1210TWG Datasheet APT50GS60BRDQ2G, NMLU1210TWG | P7-P9

STATIC ELECTRICAL CHARACTERISTICS

DYNAMIC CHARACTERISTICS

MAXIMUM RATINGS All Ratings: T

C

= 25°C unless otherwise speciﬁ ed.

ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE

Z

θ

JC

, THERMAL IMPEDANCE (°C/W)

10

-5

10

-4

10

-3

10

-2

10

-1

1.0

RECTANGULAR PULSE DURATION (seconds)

FIGURE 24. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION

0.90

0.80

0.70

0.60

0.50

0.40

0.30

0.20`

0.10

0

0.5

SINGLE PULSE

0.1

0.3

0.7

0.05

Peak T

J

= P

DM

x Z

θJC

+

T

C

Duty Factor D =

t

1

/

t

2

t

2

t

1

P

DM

Note:

D = 0.9

Symbol Characteristic / Test Conditions APT50GS60B2RDQ2(G) Unit

I

F(AV)

Maximum Average Forward Current (T

C

= 103°C, Duty Cycle = 0.5)

30

Amps

I

F(RMS)

RMS Forward Current (Square wave, 50% duty) 43

I

FSM

Non-Repetitive Forward Surge Current (T

J

= 45°C, 8.3 ms)

210

Symbol Characteristic / Test Conditions Min Type Max Unit

V

F

Forward Voltage

I

F

= 30A

2.8 3.3

Volts

I

F

= 60A

3.4

I

F

= 30A, T

J

= 125°C

2.1

Symbol Characteristic Test Conditions Min Typ Max Unit

t

rr

Reverse Recovery Time

I

F

= 1A, di

F

/dt = -100A/μs ,

V

R

= 30V, T

J

= 25°C

-

26

-

ns

t

rr

Reverse Recovery Time

I

F

= 30A, di

F

/dt = -200A/μs

V

R

= 667V, T

C

= 25°C

-

320

-

Q

rr

Reverse Recovery Charge -

545

- nC

I

RRM

Maximum Reverse Recovery Current -

4

- Amps

t

rr

Reverse Recovery Time

I

F

= 30A, di

F

/dt = -200A/μs

V

R

= 667V, T

C

= 125°C

-

435

-ns

Q

rr

Reverse Recovery Charge -

2100

-

nC

I

RRM

Maximum Reverse Recovery Current -

9

-

Amps

t

rr

Reverse Recovery Time

I

F

= 30A, di

F

/dt = -1000A/μs

V

R

= 800V, T

C

= 125°C

-

180

-

ns

Q

rr

Reverse Recovery Charge -

2975

-nC

I

RRM

Maximum Reverse Recovery Current -

28

- Amps

052-6300 Rev B 3-2012

T

J

= 125°C

V

R

= 800V

15A

30A

60A

t

rr

Q

rr

Q

rr

t

rr

I

RRM

600

500

400

300

200

100

0

35

30

25

20

15

10

5

0

Duty cycle = 0.5

T

J

= 175°C

0 25 50 75 100 125 150 25 50 75 100 125 150 175

1 10 100 200

50

45

40

35

30

25

20

15

10

5

0

1.2

1.0

0.8

0.6

0.4

0.2

0.0

200

180

160

140

120

100

80

60

40

20

0

C

J

, JUNCTION CAPACITANCE K

f

, DYNAMIC PARAMETERS

(pF) (Normalized to 1000A/μs)

I

F(AV)

(A)

T

J

, JUNCTION TEMPERATURE (°C) Case Temperature (°C)

Figure 29. Dynamic Parameters vs. Junction Temperature Figure 30. Maximum Average Forward Current vs. CaseTemperature

V

R

, REVERSE VOLTAGE (V)

Figure 31. Junction Capacitance vs. Reverse Voltage

200

180

160

140

120

100

80

60

40

20

0

5000

4000

3000

2000

1000

0

V

F

, ANODE-TO-CATHODE VOLTAGE (V) -di

F

/dt, CURRENT RATE OF CHANGE(A/μs)

Figure 25. Forward Current vs. Forward Voltage Figure 26. Reverse Recovery Time vs. Current Rate of Change

-di

F

/dt, CURRENT RATE OF CHANGE (A/μs) -di

F

/dt, CURRENT RATE OF CHANGE (A/μs)

Figure 27. Reverse Recovery Charge vs. Current Rate of Change Figure 28. Reverse Recovery Current vs. Current Rate of Change

0 1 2 3 4 5 0 200 400 600 800 1000 1200

0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200

Q

rr

, REVERSE RECOVERY CHARGE I

F

, FORWARD CURRENT

(nC) (A)

I

RRM

, REVERSE RECOVERY CURRENT t

rr

, REVERSE RECOVERY TIME

(A) (ns)

T

J

= 125°C

V

R

= 800V

60A

15A

30A

T

J

= 125°C

V

R

= 800V

60A

30A

15A

T

J

= 175°C

T

J

= -55°C

T

J

= 25°C

T

J

= 125°C

APT50GS60B_SRDQ2(G)

TYPICAL PERFORMANCE CURVES

052-6300 Rev B 3-2012

4

3

1

2

5

Zer o

1

2

3

4

di

F

/dt - Rate of Diode Current Change Through Zero Crossing.

I

F

- Forward Conduction Current

I

RRM

- Maximum Reverse Recovery Current .

t

rr

- Revers e

R ecovery Time, measured from zero crossing wher e diode

Q

rr

- Area Under the Curve Defined by I

RRM

and t

rr

.

current goes from positive to negative, to the point at which the straight

line through I

RRM

and 0.25 I

RRM

passes through zero .

0.25 I

RRM

PEARSON 2878

CURRENT

TRANSFORMER

di

F

/dt Adjus t

30μH

D.U.T.

+18V

0V

V

r

t

rr

/

Q

rr

Wavefor m

APT10078BLL

APT50GS60B_SRDQ2(G)

TYPICAL PERFORMANCE CURVES

e1 SAC: Tin, Silver, Copper

TO-247 Package Outline

D

3

Pak Package Outline

15.49 (.610)

16.26 (.640)

5.38 (.212)

6.20 (.244)

6.15 (.242) BSC

4.50 (.177) Max.

19.81 (.780)

20.32 (.800)

20.80 (.819)

21.46 (.845)

1.65 (.065)

2.13 (.084)

1.01 (.040)

1.40 (.055)

3.50 (.138)

3.81 (.150)

2.87 (.113)

3.12 (.123)

4.69 (.185)

5.31 (.209)

1.49 (.059)

2.49 (.098)

2.21 (.087)

2.59 (.102)

0.40 (.016)

0.79 (.031)

Collector

(Cathode)

Collector (Cathode)

Emitter (Anode)

Gate

5.45 (.215) BSC

Dimensions in Millimeters and (Inches )

2-Plcs.

15.95 (.628)

16.05(.632)

1.22 (.048)

1.32 (.052)

5.45 (.215) BSC

{2 Plcs. }

4.98 (.196)

5.08 (.200)

1.47 (.058)

1.57 (.062)

2.67 (.105)

2.84 (.112)

0.46 (.018)

{3 Plcs}

0.56 (.022)

Dimensions in Millimeters (Inches)

Heat Sink (Collector)

and Leads (Cathode)

are Plated

3.81 (.150)

4.06 (.160)

(Base of Lead)

Drai n

(Heat Sink)

1.98 (.078)

2.08 (.082)

Gate

Collector (Cathode)

Emitter (Anode)

0.020 (.001)

0.178 (.007)

1.27 (.050)

1.40 (.055)

11.51 (.453)

11.61 (.457)

13.41 (.528)

13.51(.532)

Revised

8/29/97

1.04 (.041)

1.15(.045)

13.79 (.543)

13.99(.551)

Revised

4/18/95

Figure 32. Diode Test Circuit

Figure 33. Diode Reverse Recovery Waveform Deﬁ nitions

e3 SAC: Tin, Silver, Copper

052-6300 Rev B 3-2012

NMLU1210TWG

NMLU1210TWG

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