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BUK624R5-30C,118
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
BUK624R5-30C
All informatio
n provided in thi
s document is su
bject to legal
disclaimers.
© NXP B.V
. 2010. All rights rese
rved.
Product data sheet
Rev
. 2 — 17 September 2010
9 of 14
NXP Semiconductors
BUK624R5-30C
N-channel T
renchMOS intermediate leve
l FET
Fig 13.
Gate charge waveform definitions
Fig 14.
Gate-source voltage as a function of gate
charge; typical values
Fig
15.
Inpu
t, output an
d reverse tr
ansfer cap
acitances
as a function o
f drain-source v
oltage; typical
values
Fig 16.
Source current as a func
tion of source-drain
voltage; typical values
003aaa508
V
GS
V
GS(th)
Q
GS1
Q
GS2
Q
GD
V
DS
Q
G(tot)
I
D
Q
GS
V
GS(pl)
003aae311
0
2
4
6
8
10
02
0
4
0
6
0
8
0
Q
G
(nC)
V
GS
(V)
V
DS
= 14V
24V
003aae309
10
2
10
3
10
4
10
-1
1
10
10
2
V
DS
(V)
C
(p
F
)
C
is s
C
rs
s
C
os
s
003aae313
0
20
40
60
80
100
0
0
.3
0
.6
0
.9
1
.2
V
SD
(V)
I
S
(A)
T
j
= 25
°
C
T
j
= 175
°
C
BUK624R5-30C
All informatio
n provided in thi
s document is su
bject to legal
disclaimers.
© NXP B.V
. 2010. All rights rese
rved.
Product data sheet
Rev
. 2 — 17 September 2010
10 of 14
NXP Semiconductors
BUK624R5-30C
N-channel T
renchMOS intermediate leve
l FET
7.
Package outline
Fig 17.
Package ou
tline SOT428 (DPAK)
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
JEITA
SOT428
SC-63
TO-252
SOT428
06-02-14
06-03-16
DIMENSIONS (mm are the original dimensions)
Plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped)
A
2
13
E
1
D
2
D
1
H
D
L
L
1
L
2
e
1
e
mounting
base
wA
M
b
E
b
2
b
1
c
A
1
y
0
5
10 mm
scale
UNIT
mm
0.93
0.46
5.46
5.00
0.56
0.20
6.22
5.98
6.73
6.47
10.4
9.6
2.95
2.55
A
1
2.38
2.22
Ab
2
1.1
0.9
b
1
e
1
0.89
0.71
bc
D
1
0.9
0.5
L
2
Ee
2.285
4.57
4.0
D
2
min
4.45
E
1
min
0.5
L
1
min
H
D
Lw
0.2
y
max
0.2
A
BUK624R5-30C
All informatio
n provided in thi
s document is su
bject to legal
disclaimers.
© NXP B.V
. 2010. All rights rese
rved.
Product data sheet
Rev
. 2 — 17 September 2010
1
1 of 14
NXP Semiconductors
BUK624R5-30C
N-channel T
renchMOS intermediate leve
l FET
8.
Revision history
T
able 7.
Revision history
Document ID
Release date
Data sheet st
atus
Change notice
Supersedes
BUK624R5-30C
v
.2
2010091
7
Product data sheet
-
BUK624R5-30C v
.1
Modifications:
•
S
tatus changed from Objective to Product.
BUK624R5-30C v
.1
20100621
Objective data sheet
-
-
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
BUK624R5-30C,118
Mfr. #:
Buy BUK624R5-30C,118
Manufacturer:
Nexperia
Description:
IGBT Transistors MOSFET N-CHAN 30V 90A
Lifecycle:
New from this manufacturer.
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BUK624R5-30C,118