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BUK624R5-30C,118

P1-P3P4-P6P7-P9P10-P12P13-P15
BUK624R5-30C All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 2 — 17 September 2010 6 of 14
NXP Semiconductors
BUK624R5-30C
N-channel TrenchMOS intermediate level FET
6. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
drain-source
breakdown voltage
I
D
=250µA; V
GS
=0V; T
j
=25°C 30--V
I
D
=250µA; V
GS
=0V; T
j
= -55 °C 27 - - V
V
GS(th)
gate-source threshold
voltage
I
D
=1mA; V
DS
=V
GS
; T
j
=25°C;
see Figure 9; see Figure 10
1.8 2.3 2.8 V
I
D
=1mA; V
DS
=V
GS
; T
j
=-55°C;
see Figure 9
--3.3V
I
D
=1mA; V
DS
=V
GS
; T
j
= 175 °C;
see Figure 9
0.8--V
I
DSS
drain leakage current V
DS
=30V; V
GS
=0V; T
j
= 175 °C - - 500 µA
V
DS
=30V; V
GS
=0V; T
j
= 25 °C - 0.02 1 µA
I
GSS
gate leakage current V
DS
=0V; V
GS
=20V; T
j
= 25 °C - 2 100 nA
V
DS
=0V; V
GS
=-20V; T
j
= 25 °C - 2 100 nA
R
DSon
drain-source on-state
resistance
V
GS
=10V; I
D
=25A; T
j
=25°C;
see Figure 11
-3.84.5mΩ
V
GS
=5V; I
D
=25A; T
j
=25°C;
see Figure 11
-4.86mΩ
V
GS
=4.5V; I
D
=25A; T
j
=25°C;
see Figure 11
-5.67.5mΩ
V
GS
=10V; I
D
=25A; T
j
= 175 °C;
see Figure 12
; see Figure 11
--8.6mΩ
Dynamic characteristics
Q
G(tot)
total gate charge I
D
=25A; V
DS
=24V; V
GS
=10V;
see Figure 13
; see Figure 14
-78-nC
I
D
=25A; V
DS
=24V; V
GS
=5V;
see Figure 13; see Figure 14
-45-nC
Q
GS
gate-source charge I
D
=25A; V
DS
=24V; V
GS
=10V;
see Figure 13
; see Figure 14
-15-nC
Q
GD
gate-drain charge - 20 - nC
C
iss
input capacitance V
GS
=0V; V
DS
=25V; f=1MHz;
T
j
=25°C; see Figure 15
- 3530 4707 pF
C
oss
output capacitance - 623 748 pF
C
rss
reverse transfer
capacitance
- 381 522 pF
t
d(on)
turn-on delay time V
DS
=25V; R
L
=1Ω; V
GS
=10V;
R
G(ext)
=10Ω
-19-ns
t
r
rise time - 54 - ns
t
d(off)
turn-off delay time - 135 - ns
t
f
fall time - 83 - ns
L
D
internal drain
inductance
from upper edge of drain mounting base
to centre of die ; T
j
=25°C
-3.5-nH
L
S
internal source
inductance
from source lead to source bond pad ;
T
j
=25°C
-7.5-nH
BUK624R5-30C All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 2 — 17 September 2010 7 of 14
NXP Semiconductors
BUK624R5-30C
N-channel TrenchMOS intermediate level FET
Source-drain diode
V
SD
source-drain voltage I
S
=25A; V
GS
=0V; T
j
=25°C;
see Figure 16
-0.81.2V
t
rr
reverse recovery time I
S
=20A; dI
S
/dt = -100 A/µs; V
GS
=0V;
V
DS
=25V
-46-ns
Q
r
recovered charge - 57 - nC
Table 6. Characteristics …continued
Symbol Parameter Conditions Min Typ Max Unit
Fig 5. Forward transconductance as a function of
drain current; typical values
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values
Fig 7. Output characteristics; drain current as a
function of drain-source voltage; typical values
Fig 8. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
003aae308
0
25
50
75
100
125
0 25 50 75 100
I
D
(A)
g
fs
(S)
003aae594
0
10
20
30
40
0 5 10 15 20
V
GS
(V)
R
DSon
(m)
003aae595
0
25
50
75
100
00.511.52
V
DS
(V)
I
D
(A)
3.6
3.8
4.0
4.510.0
3.2
5.0
V
GS
(V) =
3.4
003aae808
0
20
40
60
80
100
0246
V
GS
(V)
I
D
(A)
T
j
= 25
C
T
j
= 175
C
BUK624R5-30C All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 2 — 17 September 2010 8 of 14
NXP Semiconductors
BUK624R5-30C
N-channel TrenchMOS intermediate level FET
Fig 9. Gate-source threshold voltage as a function of
junction temperature
Fig 10. Sub-threshold drain current as a function of
gate-source voltage
Fig 11. Drain-source on-state resistance as a function
of drain current; typical values
Fig 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
003aad805
0
1
2
3
4
-60 0 60 120 180
T
j
(°C)
V
GS(th)
(V)
max
typ
min
003aad806
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
01234
V
GS
(V)
I
D
(A)
max
typ
min
003aae596
0
4
8
12
16
20
20 40 60 80 100
I
D
(A)
R
DSon
(m)
4.5
3.8
V
GS
(V) =
5.0
4.0
6.010
03aa27
0
0.5
1
1.5
2
−60 0 60 120 180
T
j
(
°
C)
a
P1-P3P4-P6P7-P9P10-P12P13-P15

BUK624R5-30C,118

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Manufacturer:
Nexperia
Description:
IGBT Transistors MOSFET N-CHAN 30V 90A
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