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DMC2990UDJ-7

P1-P3P4-P6P7-P9
DMC2990UDJ
Document number: DS35481 Rev. 9 - 2
1 of 9
www.diodes.com
March 2013
© Diodes Incorporated
DMC2990UDJ
NEW PRODUCT
ADVANCE INFORMATION
ADVANCE INFORMATION
NEW PRODUCT
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Device
V
(BR)DSS
R
DS(ON)
max
I
D
max
T
A
= +25°C
Q1 20V
0.99 @ V
GS
= 4.5V
450mA
1.2 @ V
GS
= 2.5V
400mA
1.8 @ V
GS
= 1.8V
330mA
2.4 @ V
GS
= 1.5V
300mA
Q2 -20V
1.9 @ V
GS
= -4.5V
-310mA
2.4 @ V
GS
= -2.5V
-280mA
3.4 @ V
GS
= -1.8V
-240mA
5 @ V
GS
= -1.5V
-180mA
Description
This MOSFET has been designed to minimize the on-state resistance
(R
DS(on)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
General Purpose Interfacing Switch
Power Management Functions
Analog Switch
Features and Benefits
Low On-Resistance
Very low Gate Threshold Voltage, 1.0V max
Low Input Capacitance
Fast Switching Speed
Ultra-Small Surface Mount Package 1mm x 1mm
Low Package Profile, 0.45mm Maximum Package height
ESD Protected Gate
Totally Lead-Free & Fully RoHS compliant (Note 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3 & 4)
Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
Case: SOT963
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram
Terminals: Finish Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.027 grams (approximate)
Ordering Information (Note 5 & 6)
Part Number Case Packaging
DMC2990UDJ-7 SOT963 10K/Tape & Reel
DMC2990UDJ-7B SOT963 10K/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb
2
O
3
Fire Retardants.
5. The options -7 and -7B stand for different taping orientations. Please refer to Diodes website at http://www.diodes.com for further details.
6. For packaging details, go to our website at http”//www.diodes.com/products/packages.html
Marking Information
D1 = Product Type Marking Code
ESD PROTECTED
Top View
SOT963
D1
Top View
Schematic and
Transistor Dia
g
ram
S
2
D
2
D
1
S
1
G
2
G
1
e3
DMC2990UDJ
Document number: DS35481 Rev. 9 - 2
2 of 9
www.diodes.com
March 2013
© Diodes Incorporated
DMC2990UDJ
NEW PRODUCT
ADVANCE INFORMATION
ADVANCE INFORMATION
NEW PRODUCT
Maximum Ratings Q1 N-CHANNEL (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage
V
DSS
20 V
Gate-Source Voltage
V
GSS
±8 V
Continuous Drain Current (Note 7) V
GS
= 4.5V
Steady
State
T
A
= +25°C
T
A
= +70C
I
D
450
350
mA
t<5s
T
A
= +25C
T
A
= +70C
I
D
520
410
mA
Continuous Drain Current (Note 7) V
GS
= 1.8V
Steady
State
T
A
= +25C
T
A
= +70C
I
D
330
260
mA
t<5s
T
A
= +25C
T
A
= +70C
I
D
390
310
mA
Maximum Continuous Body Diode Forward Current (Note 7)
I
S
440 mA
Pulsed Drain Current (Note 8)
I
DM
800 mA
Maximum Ratings Q2 P-CHANNEL (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage
V
DSS
-20 V
Gate-Source Voltage
V
GSS
±8 V
Continuous Drain Current (Note 5) V
GS
= -4.5V
Steady
State
T
A
= +25C
T
A
= +70C
I
D
-310
-240
mA
t<5s
T
A
= +25C
T
A
= +70C
I
D
-360
-280
mA
Continuous Drain Current (Note 5) V
GS
= -1.8V
Steady
State
T
A
= +25C
T
A
= +70C
I
D
-240
-190
mA
t<5s
T
A
= +25C
T
A
= +70C
I
D
-280
-220
mA
Maximum Continuous Body Diode Forward Current (Note 7)
I
S
-440 mA
Pulsed Drain Current (Note 8)
I
DM
-800 mA
Thermal Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 7)
P
D
350 mW
Thermal Resistance, Junction to Ambient (Note 7)
Steady State
R
JA
360 °C/W
t<5s 270 °C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150 °C
Notes: 7. Device mounted on FR-4 PCB, with minimum recommended pad layout.
8. Device mounted on minimum recommended pad layout test board, 10s pulse duty cycle = 1%.
DMC2990UDJ
Document number: DS35481 Rev. 9 - 2
3 of 9
www.diodes.com
March 2013
© Diodes Incorporated
DMC2990UDJ
NEW PRODUCT
ADVANCE INFORMATION
ADVANCE INFORMATION
NEW PRODUCT
Electrical Characteristics Q1 N-CHANNEL (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
BV
DSS
20 - - V
V
GS
= 0V, I
D
= 250A
Zero Gate Voltage Drain Current @T
C
= +25°C I
DSS
- - 100
nA
V
DS
= 16V, V
GS
= 0V
- - 50
V
DS
= 5V, V
GS
= 0V
Gate-Source Leakage
I
GSS
- - ±100 nA
V
GS
= ±5V, V
DS
= 0V
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
V
GS
(
th
)
0.4 - 1.0 V
V
DS
= V
GS
, I
D
= 250A
Static Drain-Source On-Resistance
R
DS(ON)
- 0.60 0.99
V
GS
= 4.5V, I
D
= 100mA
- 0.75 1.2
V
GS
= 2.5V, I
D
= 50mA
- 0.90 1.8
V
GS
= 1.8V, I
D
= 20mA
- 1.2 2.4
V
GS
= 1.5V, I
D
= 10mA
- 2.0 -
V
GS
= 1.2V, I
D
= 1mA
Forward Transfer Admittance
|Y
fs
|
180 850 - mS
V
DS
= 5V, I
D
= 125mA
Diode Forward Voltage
V
SD
- 0.6 1.0 V
V
GS
= 0V, I
S
= 10mA
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
C
iss
- 27.6 - pF
V
DS
= 15V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
- 4.0 - pF
Reverse Transfer Capacitance
C
rss
- 2.8 - pF
Gate Resistance
R
G
- 113 -
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge
Q
g
- 0.5 - nC
V
GS
= 4.5V, V
DS
= 10V,
I
D
= 250mA
Gate-Source Charge
Q
g
s
- 0.07 - nC
Gate-Drain Charge
Q
g
d
- 0.07 - nC
Turn-On Delay Time
t
D
(
on
)
- 4.0 - ns
V
DD
= 15V, V
GS
= 4.5V,
R
L
= 47, R
G
= 2,
I
D
= 200mA
Turn-On Rise Time
t
r
- 3.3 - ns
Turn-Off Delay Time
t
D
(
off
)
- 19.0 - ns
Turn-Off Fall Time
t
f
- 6.4 - ns
Electrical Characteristics Q2 P-CHANNEL (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
BV
DSS
-20 - - V
V
GS
= 0V, I
D
= -250A
Zero Gate Voltage Drain Current @T
C
= +25°C I
DSS
- - 100
nA
V
DS
= -16V, V
GS
= 0V
- - 50
V
DS
= -5V, V
GS
= 0V
Gate-Source Leakage
I
GSS
- - ±100 nA
V
GS
= ±5V, V
DS
= 0V
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
V
GS
(
th
)
-0.4 - -1.0 V
V
DS
= V
GS
, I
D
= -250A
Static Drain-Source On-Resistance
R
DS(ON)
- 1.2 1.9
V
GS
= -4.5V, I
D
= -100mA
- 1.5 2.4
V
GS
= -2.5V, I
D
= -50mA
- 2.1 3.4
V
GS
= -1.8V, I
D
= -20mA
- 2.5 5
V
GS
= -1.5V, I
D
= -10mA
- 4.0 -
V
GS
= -1.2V, I
D
= -1mA
Forward Transfer Admittance
|Y
fs
|
100 450 - mS
V
DS
= -5V, I
D
= -125mA
Diode Forward Voltage
V
SD
- -0.6 -1.0 V
V
GS
= 0V, I
S
= -10mA
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
C
iss
- 28.7 - pF
V
DS
= -15V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
- 4.2 - pF
Reverse Transfer Capacitance
C
rss
- 2.9 - pF
Gate Resistance
R
G
- 399 -
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge
Q
g
- 0.4 - nC
V
GS
= -4.5V, V
DS
=- 10V,
I
D
= -250mA
Gate-Source Charge
Q
g
s
- 0.08 - nC
Gate-Drain Charge
Q
g
d
- 0.06 - nC
Turn-On Delay Time
t
D
(
on
)
- 5.8 - ns
V
DD
= -15V, V
GS
= -4.5V,
R
G
= 2, I
D
= -200mA
Turn-On Rise Time
t
r
- 5.7 - ns
Turn-Off Delay Time
t
D
(
off
)
- 31.1 - ns
Turn-Off Fall Time
t
f
- 16.4 - ns
Notes: 9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.
P1-P3P4-P6P7-P9

DMC2990UDJ-7

Mfr. #:
Buy DMC2990UDJ-7
Manufacturer:
Diodes Incorporated
Description:
MOSFET MOSFET BVDSS
Lifecycle:
New from this manufacturer.
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