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DMC2990UDJ-7

P1-P3P4-P6P7-P9
DMC2990UDJ
Document number: DS35481 Rev. 9 - 2
4 of 9
www.diodes.com
March 2013
© Diodes Incorporated
DMC2990UDJ
NEW PRODUCT
ADVANCE INFORMATION
ADVANCE INFORMATION
NEW PRODUCT
Q1 N-CHANNEL
0
0.2
0.4
0.6
0.8
0 0.5 1 1.5 2 2.5 3 3.5 4
V , DRAIN-SOURCE VOLTAGE (A)
Fig. 1 Typical Output Characteristics
DS
I , DRAIN CURRENT (A)
D
V = 1.2V
GS
V
GS
= 1.5V
V
GS
= 2.0V
V
GS
= 2.5V
V
GS
= 3.0V
V
GS
=4.0V
V
GS
= 4.5V
0
0.2
0.4
0.6
0.8
0 0.5 1 1.5 2 2.5 3
V , GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
GS
V = 5.0V
DS
T = -55°C
A
T =
A
25°C
T =
A
85°C
T =
A
125°C
T =
A
150°C
I , DRAIN CURRENT(A)
D
0.2
0.4
0.6
0.8
1.0
1.2
0 0.2 0.4 0.6 0.8
I , DRAIN-SOURCE CURRENT
Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage
D
, D
AI
-S
E
-
ESIS
A
E ( )
DS(ON)
V = 1.8V
GS
V = 2.5V
GS
V = 4.5V
GS
0
0.2
0.4
0.6
0.8
1.0
1.2
0 0.2 0.4 0.6 0.8 1.0
T =
A
-55°C
T =
A
25°C
T =
A
85°C
T = 150°C
A
T =
A
125°C
I DRAIN CURRENT (A)
Fig. 4 Typical On-Resistance vs. Drain Current and Temperature
D
, D
AIN-S
E
N-
ESIS
AN
E ( )
DS(ON)
V = 4.5V
GS
0.6
0.8
1.0
1.2
1.4
1.6
-50-25 0 25 50 75100125150
T , JUNCTION TEMPERATURE( C)
Fig. 5 On-Resistance Variation with Temperature
J
R , DRAIN-SOURCE
ON-RESISTANCE (Normalized)
DS(ON)
I = 150mA
D
I = 300mA
D
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
0
0.2
0.4
0.6
0.8
1.0
1.2
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE( C)
Fig. 6 On-Resistance Variation with Temperature
J
I = 150mA
D
I = 300mA
D
DMC2990UDJ
Document number: DS35481 Rev. 9 - 2
5 of 9
www.diodes.com
March 2013
© Diodes Incorporated
DMC2990UDJ
NEW PRODUCT
ADVANCE INFORMATION
ADVANCE INFORMATION
NEW PRODUCT
0
0.2
0.4
0.6
0.8
1.0
1.2
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE( C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
J
V , GATE THRESHOLD VOLTAGE (V)
GS(TH)
I = 250µA
D
I = 1mA
D
0
0.2
0.4
0.6
0.8
1.0
0 0.2 0.4 0.6 0.8 1.0 1.2
T = 25°C
A
V , SOURCE- DRAIN VOLTAGE (V)
Fig. 8 Diodes Forward Voltage vs. Current
SD
I, S
O
U
R
C
E
C
U
R
R
EN
T
(A)
S
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Junction Capacitance
DS
C
T
, J
U
N
C
T
I
O
N
C
A
P
A
C
I
T
AN
C
E (p
F
)
50
40
30
20
10
0
10 15 2050
f = 1MHz
C
iss
C
oss
C
rss
1
10
100
1,000
2 4 6 8 10 12 14 16 18 20
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Drain-Source Leakage Current vs. Voltage
DS
I , LEAKAGE CURRENT (nA)
DSS
T =
A
25°C
T =
A
85°C
T =
A
125°C
T = 150°C
A
0
2
4
6
8
0 0.2 0.4 0.6 0.8 1
Q - (nC)
Fig. 11 Gate Charge Characteristics
G
V = 10V
DS
V,
G
A
T
E-S
O
U
R
C
E V
O
L
T
A
G
E (V)
GS
0.001
0.1
1
110100
P = 10s
W
DC
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
P = 10µs
W
T = 150°C
T = 25°C
Single Pulse
J(MAX)
A
0.01
0.1
V , DRAIN-SOURCE VOLTAGE
Fig. 12 SOA, Safe Operation Area
DS
I , DRAIN CURRENT (A)
D
R
Limited
DS(on)
DMC2990UDJ
Document number: DS35481 Rev. 9 - 2
6 of 9
www.diodes.com
March 2013
© Diodes Incorporated
DMC2990UDJ
NEW PRODUCT
ADVANCE INFORMATION
ADVANCE INFORMATION
NEW PRODUCT
Q2 P-CHANNEL
0
0.2
0.4
0.6
0.8
0 0.5 1 1.5 2 2.5 3 3.5 4
-V , DRAIN-SOURCE VOLTAGE (V)
Fig. 13 Typical Output Characteristics
DS
-I , DRAIN CURRENT (A)
D
0
0.2
0.4
0.6
0.8
0 0.5 1 1.5 2 2.5 3
-V , GATE-SOURCE VOLTAGE (V)
Fig. 14 Typical Transfer Characteristics
GS
-I , DRAIN CURRENT(A)
D
V = -5.0V
DS
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
3.5 4
-I , DRAIN-SOURCE CURRENT
Fig. 15 Typical On-Resistance vs.
Drain Current and Gate Voltage
D
R
, D
R
AIN-S
O
U
R
CE
O
N-
R
ESISTANCE ( )
DS(ON)
0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
0 0.2 0.4 0.6 0.8
V = -1.8V
GS
V = -4.5V
GS
0
0.4
1.6
1.2
2.0
0 0.2 0.4 0.6 0.8
V = -4.5V
GS
-I DRAIN CURRENT (A)
Fig. 16 Typical On-Resistance vs.
Drain Current and Temperature
D
R
, D
R
AIN-S
O
U
R
CE
O
N-
R
ESISTANCE ( )
DS(ON)
T = 150°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
T = 125°C
A
0.8
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE( C)
Fig. 17 On-Resistance Variation with Temperature
J
, D
AI
-S
E
ON-RESISTANCE (Normalized)
DS(ON)
0.5
0.7
0.9
1.1
1.3
1.5
1.7
V = -2.5V,
I = -150mA
GS
D
V = -4.5V,
I = -300mA
GS
D
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE( C)
Fig. 18 On-Resistance Variation with Temperature
J
0
0.4
0.8
1.2
1.6
2.0
2.4
V = -2.5V,
I = -150mA
GS
D
V = -4.5V,
I = -300mA
GS
D
P1-P3P4-P6P7-P9

DMC2990UDJ-7

Mfr. #:
Buy DMC2990UDJ-7
Manufacturer:
Diodes Incorporated
Description:
MOSFET MOSFET BVDSS
Lifecycle:
New from this manufacturer.
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