APT27GA90BD15

052-6343 Rev E 5 - 2011
STATIC ELECTRICAL CHARACTERISTICS
DYNAMIC CHARACTERISTICS
MAXIMUM RATINGS All Ratings: T
C
= 25°C unless otherwise speci ed.
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
Symbol Characteristic / Test Conditions APT27GA90BD_SD15 Unit
I
F(AV)
Maximum Average Forward Current (T
C
= 126°C, Duty Cycle = 0.5)
15
Amps
I
F(RMS)
RMS Forward Current (Square wave, 50% duty) 29
I
FSM
Non-Repetitive Forward Surge Current (T
J
= 45°C, 8.3 ms)
80
Symbol Characteristic / Test Conditions Min Type Max Unit
V
F
Forward Voltage
I
F
= 15A
2.5
Volts
I
F
= 30A
3.06
I
F
= 15A, T
J
= 125°C
1.92
Symbol Characteristic Test Conditions Min Typ Max Unit
t
rr
Reverse Recovery Time
I
F
= 1A, di
F
/dt = -100A/s ,
V
R
= 30V, T
J
= 25°C
-
20
-
ns
t
rr
Reverse Recovery Time
I
F
= 15A, di
F
/dt = -200A/s
V
R
= 667V, T
C
= 25°C
-
235
-
Q
rr
Reverse Recovery Charge -
185
- nC
I
RRM
Maximum Reverse Recovery Current -
3
- Amps
t
rr
Reverse Recovery Time
I
F
= 15A, di
F
/dt = -200A/s
V
R
= 667V, T
C
= 125°C
-
300
-ns
Q
rr
Reverse Recovery Charge -
810
-
nC
I
RRM
Maximum Reverse Recovery Current -
6
-
Amps
t
rr
Reverse Recovery Time
I
F
= 15A, di
F
/dt = -1000A/s
V
R
= 667V, T
C
= 125°C
-
125
-
ns
Q
rr
Reverse Recovery Charge -
1150
-nC
I
RRM
Maximum Reverse Recovery Current -
19
- Amps
Z
JC
, THERMAL IMPEDANCE (°C/W)
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 23. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
1.20
1.00
0.80
0.60
0.40
0.20
0
0.5
SINGLE PULSE
0.1
0.3
0.7
D = 0.9
0.05
Peak T
J
= P
DM
x Z
θJC
+
T
C
Duty Factor D =
t
1
/
t
2
t
2
t
1
P
DM
Note:
052-6343 Rev E 5 - 2011
Dynamic Characteristics T
J
= 25°C unless otherwise speci ed
APT27GA90BD_SD15
T
J
= 125°C
V
R
= 667V
7.5A
15A
30A
t
rr
Q
rr
Q
rr
t
rr
I
RRM
400
350
300
250
200
150
100
50
0
25
20
15
10
5
0
Duty cycle = 0.5
T
J
= 175°C
35
30
25
20
15
10
5
0
1.2
1.0
0.8
0.6
0.4
0.2
0.0
80
70
60
50
40
30
20
10
0
C
J
, JUNCTION CAPACITANCE K
f
, DYNAMIC PARAMETERS
(pF) (Normalized to 1000A/s)
I
F(AV)
(A)
T
J
, JUNCTION TEMPERATURE (°C) Case Temperature (°C)
Figure 28. Dynamic Parameters vs. Junction Temperature Figure 29. Maximum Average Forward Current vs. CaseTemperature
V
R
, REVERSE VOLTAGE (V)
Figure 30. Junction Capacitance vs. Reverse Voltage
45
40
35
30
25
20
15
10
5
0
2000
1800
1600
1400
1200
1000
800
600
400
200
0
V
F
, ANODE-TO-CATHODE VOLTAGE (V) -di
F
/dt, CURRENT RATE OF CHANGE(A/s)
Figure 24. Forward Current vs. Forward Voltage Figure 25. Reverse Recovery Time vs. Current Rate of Change
-di
F
/dt, CURRENT RATE OF CHANGE (A/s) -di
F
/dt, CURRENT RATE OF CHANGE (A/s)
Figure 26. Reverse Recovery Charge vs. Current Rate of Change Figure 27. Reverse Recovery Current vs. Current Rate of Change
Q
rr
, REVERSE RECOVERY CHARGE I
F
, FORWARD CURRENT
(nC) (A)
I
RRM
, REVERSE RECOVERY CURRENT t
rr
, REVERSE RECOVERY TIME
(A) (ns)
T
J
= 125°C
V
R
= 667V
T
J
= 175°C
T
J
= -55°C
T
J
= 25°C
T
J
= 125°C
0 1 2 3 4 0 200 400 600 800 1000 1200
0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200
T
J
= 125°C
V
R
= 667V
30A
7.5A
15A
30A
15A
7.5A
0 25 50 75 100 125 150 25 50 75 100 125 150 175
1 10 100 200
052-6343 Rev E 5 - 2011
Dynamic Characteristic T
J
= 25°C unless otherwise speci ed
APT27GA90BD_SD15
APT10035LLL
4
3
1
2
5
Zer o
0.25 I
RR
M
PEARSON 2878
CURRENT
TRANSFORMER
di
F
/dt Adjus t
30μH
D.U.T.
+18V
0V
r
t
rr
/
Q
rr
Waveform
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
Collector
Collector
Emitter
Gate
5.45 (.215) BSC
2-Plcs.
15.95 (.628)
16.05(.632)
1.22 (.048)
1.32 (.052)
5.45 (.215) BSC
{2 Plcs. }
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
2.67 (.105)
2.84 (.112)
0.46 (.018)
{3 Plcs}
0.56 (.022)
Heat Sink (Collector)
and Leads
are Plated
3.81 (.150)
4.06 (.160)
(Base of Lead )
Collector
(Heat Sink)
1.98 (.078)
2.08 (.082)
Gate
Collector
Emitter
0.020 (.001)
0.178 (.007)
1.27 (.050)
1.40 (.055)
11.51 (.453)
11.61 (.457)
13.41 (.528)
13.51(.532)
Revised
8/29/97
1.04 (.041)
1.15(.045)
13.79 (.543)
13.99(.551)
Revised
4/18/95
e1 SAC: Tin, Silver, Copper
e3 100% Sn
(Cathode)
(Anode)
(Cathode)
(Cathode)
(Anode)
(Cathode)
Figure 32. Diode Reverse Recovery Waveform De nition
Figure 31. Diode Test Circuit
I
F
- Forward Conduction Current
di
F
/dt - Rate of Diode Current Change Through Zero Crossing.
I
RRM
- Maximum Reverse Recovery Current
t
rr
- Reverse Recovery Time measured from zero crossing where
diode current goes from positive to negative, to the point at
which the straight line through I
RRM
and 0.25, I
RRM
passes through zero.
Q
rr
- Area Under the Curve De ned by I
RRM
and t
RR.
5
1
2
3
4
TO-247 Package Outline
Dimensions in Millimeters (Inches)
Dimensions in Millimeters (Inches)
D
3
PAK Package Outline
1.016 (.040)

APT27GA90BD15

Mfr. #:
Manufacturer:
Microchip / Microsemi
Description:
IGBT Transistors FG, IGBT-COMBI, 900V, TO-247
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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