APT27GA90BD15

Mfr. #:: APT27GA90BD15
Manufacturer:: Microchip / Microsemi
Description:: IGBT Transistors FG, IGBT-COMBI, 900V, TO-247
Lifecycle:: New from this manufacturer.
Datasheet:: APT27GA90BD15 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: APT27GA90BD15 Datasheet APT27GA90BD15 Datasheet (P4-P6)APT27GA90BD15 Datasheet (P7-P9)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Microchip

Product Category:: IGBT Transistors

RoHS:: Y

Technology:: Si

Package / Case:: TO-247-3

Mounting Style:: Through Hole

Configuration:: Single

Collector- Emitter Voltage VCEO Max:: 900 V

Collector-Emitter Saturation Voltage:: 2.5 V

Maximum Gate Emitter Voltage:: 30 V

Continuous Collector Current at 25 C:: 48 A

Pd - Power Dissipation:: 223 W

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Packaging:: Tube

Continuous Collector Current Ic Max:: 48 A

Height:: 4.69 mm

Length:: 20.8 mm

Operating Temperature Range:: - 55 C to + 150 C

Width:: 15.49 mm

Brand:: Microchip / Microsemi

Continuous Collector Current:: 48 A

Gate-Emitter Leakage Current:: 100 nA

Product Type:: IGBT Transistors

Factory Pack Quantity:: 1

Subcategory:: IGBTs

Unit Weight:: 1.340411 oz

Tags: APT27, APT2, APT

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We provide 90-360 days warranty.

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

APT27GA90BD15 Description

***p One Stop Global: Trans IGBT Chip N-CH 900V 48A 3-Pin(3+Tab) TO-247

***rochip: IGBT PT MOS 8 Combi 900 V 27 A TO-247

*** Stop Electro: Insulated Gate Bipolar Transistor, 48A I(C), 900V V(BR)CES, N-Channel, TO-247AD

***p One Stop Global: Trans IGBT Chip N-CH 900V 51A 200000mW 3-Pin(3+Tab) TO-247AC Tube

***ineon SCT: 900V Warp 20-100 kHz Discrete IGBT in a TO-247AC package, TO247-3, RoHS

***trelec: IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 900 V Collector-emitter saturation voltage: 2.25 V Current release time: 150 ns Power dissipation: 200 W

***nell: IGBT, TO-247; Collector Emitter Saturation Voltage Vce(on): 2.7V; Power Dissipation Pd: 200W; Collector Emitter Voltage V(br)ceo: 900V; Transistor Case Style: TO-247; No. of Pins: 3Pins; MSL: -; SVHC: No SVHC (27-Jun-2018); Cur

***ark: MOSFET; Transistor Type:MOSFET; Package/Case:TO-247AC; Power Dissipation, Pd:200W; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Current Rating:51A; Mounting Type:Through Hole; Voltage Rating:900V ;RoHS Compliant: Yes

***ment14 APAC: IGBT, 900V, 51A, TO-247AC; Transistor Type:IGBT; DC Collector Current:51A; Collector Emitter Voltage Vces:2.7V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:900V; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:51A; Current Temperature:25°C; Device Marking:IRG4PF50WPbF; Fall Time Max:220ns; Fall Time tf:220ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulsed Current Icm:204A; Rise Time:26ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:900V

***p One Stop Global: Trans IGBT Chip N-CH 900V 51A 200000mW 3-Pin(3+Tab) TO-247AC Tube

***ure Electronics: IRG4PF50WDPBF Series 900 V 28 A N-Channel UltraFast IGBT - TO-247AC

***ineon SCT: Copacked 900V IGBT in a TO-247AC package with ultrafast 20-100 kHz ultrafast, ultrasoft recovery anti-parallel diode, TO247COPAK-3, RoHS

***trelec: IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 900 V Collector-emitter saturation voltage: 2.7 V Current release time: 190 ns Power dissipation: 200 W

***ark: IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:51A; Collector Emitter Saturation Voltage, Vce(sat):2.7V; Power Dissipation, Pd:200W; Package/Case:TO-247AC ;RoHS Compliant: Yes

***nell: IGBT, TO-247; Collector Emitter Saturation Voltage Vce(on): 2.25V; Power Dissipation Pd: 200W; Collector Emitter Voltage V(br)ceo: 900V; Transistor Case Style: TO-247; No. of Pins: 3Pins; MSL: -; SVHC: No SVHC (27-Jun-2018); Cu

***ment14 APAC: IGBT, 900V, 51A, TO-247AC; Transistor Type:IGBT; DC Collector Current:51A; Collector Emitter Voltage Vces:2.25V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:900V; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:51A; Current Temperature:25°C; Device Marking:IRG4PF50WDPbF; Fall Time Max:190ns; Fall Time tf:220ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulsed Current Icm:204A; Rise Time:52ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:900V

***et: Trans IGBT Chip N-CH 900V 43A 3-Pin(3+Tab) TO-247

***rochip: IGBT PT MOS 7 Combi 900 V 15 A TO-247

***i-Key: IGBT 900V 43A 250W TO247

***hardson RFPD: POWER IGBT TRANSISTOR

***S: new, original packaged

***el Nordic: Contact for details

***p One Stop Global: Trans IGBT Chip N-CH 900V 44A 3-Pin(3+Tab) TO-247

***el Electronic: IGBT Transistors 900V 24A 2.7V XPT IGBTs GenX3 w/ Diode

***i-Key: IGBT 900V 44A 200W C3 TO-247

***ure Electronics: 900V, 24A, 2.7Vce, TO-247

***ical: Trans IGBT Chip N-CH 900V 63A 290000mW 3-Pin(3+Tab) TO-247 Tube

***rochip: IGBT PT MOS 8 Single 900 V 35 A TO-247

*** Stop Electro: Insulated Gate Bipolar Transistor, 63A I(C), 900V V(BR)CES, N-Channel, TO-247

***ure Electronics: IGBT Transistors FG, IGBT, 900V, TO-247

***i-Key: IGBT 900V 140A 750W C3 TO-247

***ure Electronics: 900V, 60A, 2.7VCE, TO-247

Market price

Part #	Mfg.	Description	Stock	Price
APT27GA90BD15 DISTI # APT27GA90BD15-ND	Microsemi Corporation	IGBT 900V 48A 223W TO247 RoHS: Compliant Min Qty: 1 Container: Tube	236In Stock	500:$5.0134 100:$5.9837 25:$6.6304 10:$7.2770 1:$8.0900
APT27GA90BD15 DISTI # APT27GA90BD15	Microchip Technology Inc	Trans IGBT Chip N-CH 900V 48A 3-Pin(3+Tab) TO-247 - Rail/Tube (Alt: APT27GA90BD15) RoHS: Compliant Min Qty: 83 Container: Tube	Americas - 0	415:$3.7900 830:$3.7900 249:$3.9900 166:$4.0900 83:$4.1900
APT27GA90BD15 DISTI # 494-APT27GA90BD15	Microchip Technology Inc	IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 8 - Combi RoHS: Compliant	79	1:$7.5500 10:$6.7900 25:$6.1900 100:$5.5800 250:$5.0900 500:$4.6500 1000:$4.0600
APT27GA90BD15 DISTI # APT27GA90BD15	Microsemi Corporation	POWER IGBT TRANSISTOR RoHS: Compliant	230	1:$4.0400 50:$3.9300 100:$3.8900

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Availability

Stock:: 79
On Order:: 2062
Enter Quantity:

Current price of APT27GA90BD15 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$7.55~~; ~~$7.55~~

10: ~~$6.79~~; ~~$67.90~~

25: ~~$6.19~~; ~~$154.75~~

100: ~~$5.58~~; ~~$558.00~~

250: ~~$5.09~~; ~~$1 272.50~~

500: ~~$4.65~~; ~~$2 325.00~~

1000: ~~$4.06~~; ~~$4 060.00~~

2500: ~~$3.73~~; ~~$9 325.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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APT27GA90BD15

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes