PartNumber | APT27HZTR-G1 | APT27ZTR-G1 | APT27GA90BD15 |
Description | Bipolar Transistors - BJT NPN 450Vceo 0.8A 0.8w 0.5mV 700Vces | Bipolar Transistors - BJT NPN 450Vceo 0.8A 0.8w 0.5mV 700Vces | IGBT Transistors FG, IGBT-COMBI, 900V, TO-247 |
Manufacturer | Diodes Incorporated | Diodes Incorporated | Microchip |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | IGBT Transistors |
RoHS | Y | Y | Y |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-92-3 | TO-92-3 | TO-247-3 |
Transistor Polarity | NPN | NPN | - |
Configuration | Single | Single | Single |
Collector Emitter Voltage VCEO Max | 450 V | 450 V | 900 V |
Emitter Base Voltage VEBO | 9 V | 9 V | - |
Collector Emitter Saturation Voltage | 500 mV | 500 mV | 2.5 V |
Maximum DC Collector Current | 1.6 A | 1.6 A | - |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Series | APT27 | APT27 | - |
DC Current Gain hFE Max | 40 at 100 mA, 10 V | 40 at 100 mA, 10 V | - |
Packaging | Ammo Pack | Ammo Pack | Tube |
Brand | Diodes Incorporated | Diodes Incorporated | Microchip / Microsemi |
Continuous Collector Current | 0.8 A | 0.8 A | 48 A |
DC Collector/Base Gain hfe Min | 6 at 300 mA, 10 V | 6 at 300 mA, 10 V | - |
Pd Power Dissipation | 800 mW | 800 mW | 223 W |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | IGBT Transistors |
Factory Pack Quantity | 2000 | 2000 | 1 |
Subcategory | Transistors | Transistors | IGBTs |
Unit Weight | 0.016000 oz | 0.016000 oz | 1.340411 oz |
Technology | - | - | Si |
Maximum Gate Emitter Voltage | - | - | 30 V |
Continuous Collector Current at 25 C | - | - | 48 A |
Continuous Collector Current Ic Max | - | - | 48 A |
Height | - | - | 4.69 mm |
Length | - | - | 20.8 mm |
Operating Temperature Range | - | - | - 55 C to + 150 C |
Width | - | - | 15.49 mm |
Gate Emitter Leakage Current | - | - | 100 nA |