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SIRA12BDP-T1-GE3

P1-P3P4-P6P7-P9P10-P12P13-P13
SiRA12BDP
www.vishay.com
Vishay Siliconix
S18-0316-Rev. A, 19-Mar-18
4
Document Number: 76390
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Threshold Voltage
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
Safe Operating Area
10
100
1000
10000
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1.0 1.2
Axis Title
1st line
2nd line
2nd line
I
S
- Source Current (A)
V
SD
- Source-to-Drain Voltage (V)
2nd line
T
J
= 150 °C
T
J
= 25 °C
10
100
1000
10000
1.0
1.2
1.4
1.6
1.8
2.0
2.2
-50 -25 0 25 50 75 100 125 150
Axis Title
1st line
2nd line
V
GS(th)
(V)
T
J
- Temperature (°C)
2nd line
I
D
= 250 µA
10
100
1000
10000
0
0.002
0.004
0.006
0.008
0.010
0.012
0246810
Axis Title
1st line
2nd line
2nd line
R
DS(on)
- On-Resistance (Ω)
V
GS
- Gate-to-Source Voltage (V)
2nd line
T
J
= 25 °C
T
J
= 125 °C
I
D
= 10 A
10
100
1000
10000
0
30
60
90
120
0.001 0.01 0.1 1 10 100 1000
Axis Title
1st line
2nd line
2nd line
Power (W)
Time (s)
2nd line
10
100
1000
10000
0.01
0.1
1
10
100
1000
0.01 0.1 1 10 100
Axis Title
1st line
2nd line
2nd line
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
(1)
V
GS
> minimum V
GS
at which R
DS(on)
is specified
Limited by R
DS(on)
(1)
T
A
= 25 °C
Single pulse
100 ms
10 ms
1 ms
100 µs
1 s
10 s
DC
I
DM
Limited
I
D(ON)
Limited
BV
dss
Limited
SiRA12BDP
www.vishay.com
Vishay Siliconix
S18-0316-Rev. A, 19-Mar-18
5
Document Number: 76390
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Current Derating
a
Power, Junction-to-Case
Note
a. The power dissipation P
D
is based on T
J
max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit
10
100
1000
10000
0
15
30
45
60
75
90
0255075100125150
Axis Title
1st line
2nd line
2nd line
I
D
- Drain Current (A)
T
C
- Case Temperature (°C)
2nd line
Package limited
10
100
1000
10000
0
10
20
30
40
50
0 255075100125150
Axis Title
1st line
2nd line
2nd line
Power (W)
T
C
- Case Temperature (°C)
2nd line
SiRA12BDP
www.vishay.com
Vishay Siliconix
S18-0316-Rev. A, 19-Mar-18
6
Document Number: 76390
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?76390
.
10
100
1000
10000
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
Axis Title
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
Square Wave Pulse Duration (s)
2nd line
0.1
0.05
0.02
Single pulse
Duty Cycle = 0.5
0.2
10
100
1000
10000
0.01
0.1
1
0.0001 0.001 0.01 0.1
Axis Title
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
Square Wave Pulse Duration (s)
2nd line
0.1
0.05
0.02
Single pulse
Duty Cycle = 0.5
0.2
P1-P3P4-P6P7-P9P10-P12P13-P13

SIRA12BDP-T1-GE3

Mfr. #:
Buy SIRA12BDP-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 30V Vds 20V Vgs PowerPAK SO-8
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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