JULY 2000 - REVISED SEPTEMBER 2014
Specifi cations are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specifi c applications.
These devices are designed to limit overvoltages on the telephone line. Overvoltages are normally caused by a.c. power system or lightning
fl ash disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is typically used
for the protection of 2-wire telecommunication equipment (e.g. between the Ring and Tip wires for telephones and modems). Combinations of
devices can be used for multi-point protection (e.g. 3-point protection between Ring, Tip and Ground).
The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until
the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the
current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current helps prevent d.c. latchup as
the diverted current subsides.
The TISP4xxxL3 range consists of fi fteen voltage variants to meet various maximum system voltage levels (58 V to 320 V). They are
guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. These protection devices are in an SMAJ
(JEDEC DO-214AC with J-bend leads) plastic package. These devices are supplied in embossed tape reel carrier pack. For alternative voltage
and holding current values, consult the factory. For higher rated impulse currents, the 50 A 10/1000 TISP4xxxM3AJ series in SMA and the 100
A 10/1000 TISP4xxxH3BJ series in SMB are available.
TISP4xxxL3AJ Overvoltage Protector Series
Rating Symbol Value Unit
Repetitive peak off-state voltage, (see Note 1)
‘4070
‘4080
‘4125
‘4145
‘4165
‘4180
‘4220
‘4240
‘4260
‘4290
‘4350
‘4360
‘4395
V
DRM
± 58
± 65
‘4090 ± 70
±100
±120
±135
±145
±160
±180
±200
±230
‘4320 ±240
±275
±290
±320
V
Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4)
I
TSP
A
2/10 μs (GR-1089-CORE, 2/10 μs voltage wave shape) 125
8/20 μs (IEC 61000-4-5, combination wave generator, 1.2/50 voltage, 8/20 current) 100
10/160 μs (FCC Part 68, 10/160 μs voltage wave shape) 65
5/310 μs (ITU-T K.20/21/45, K.44 10/700 μs voltage wave shape) 50
5/310 μs (FTZ R12, 10/700 μs voltage wave shape) 50
10/560 μs (FCC Part 68, 10/560 μs voltage wave shape) 40
10/1000 μs (G R-1089-CORE, 10/1000 μs voltage wave shape) 30
Non-repetitive peak on-state current (see Notes 2, 3 and 4)
I
TSM
18
7
1.6
A
20 ms (50 Hz) full sine wave
1 s (50 Hz) full sine wave
1000 s 50 Hz/60 Hz a.c.
Junction temperature T
J
-40 to +150 °C
Storage temperature range T
stg
-65 to +150 °C
NOTES: 1. For voltage values at lower temperatures, derate at 0.13 %/°C.
2. Initially, the TISP4xxxL3 must be in thermal equilibrium with T
J
=25°C.
3. The surge may be repeated after the TISP4xxxL3 returns to its initial conditions.
4. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
track widths. Derate current values at -0.61 %/°C for ambient temperatures
above 25 °
C.
Description
Absolute Maximum Ratings, T
A
= 25 °C (Unless Otherwise Noted)
