TISP4240L3AJR-S

JULY 2000 - REVISED SEPTEMBER 2014
Specifi cations are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specifi c applications.
TISP4xxxL3AJ Overvoltage Protector Series
C
off
Off-state capacitance
f=1MHz, V
d
=1V rms, V
D
= ±1V
f=1MHz, V
d
=1V rms, V
D
= ±50 V
4070 thru 4090
4125 thru ‘4220
4240 thru ‘4395
4070 thru ‘4090
4125 thru ‘4220
4240 thru ‘4395
53
40
33
25
18
14
64
48
40
30
22
17
pF
Parameter Test Conditions Min Typ Max Unit
Parameter Test Conditions Min Typ Max Unit
R
θ
JA
Junction to free air thermal resistance
EIA/JESD51-3 PCB, I
T
= I
TSM(1000)
,
T
A
= 25 °C, (see Note 75)
115
°C/W
265 mm x 210 mm populated line card,
4-layer PCB, I
T
= I
TSM(1000)
, T
A
= 25 °C
52
NOTE 5: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
Electrical Characteristics, T
A
= 25 °C (Unless Otherwise Noted) (Continued)
Thermal Characteristics
JULY 2000 - REVISED SEPTEMBER 2014
Specifi cations are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specifi c applications.
TISP4xxxL3AJ Overvoltage Protector Series
Figure 1. Voltage-Current Characteristic for T and R Terminals
All Measurements are Referenced to the R Terminal
-v
V
DRM
I
DRM
V
D
I
H
I
T
V
T
I
TSM
I
TSP
V
(BO)
I
(BO)
I
D
Quadrant I
I
Switching
Characteristic
+v
+i
V
(BO)
I
(BO)
V
D
I
D
I
H
I
T
V
T
I
TSM
I
TSP
-i
Quadrant III
Switching
Characteristic
PMXXAAB
V
DRM
I
DRM
Parameter Measurement Information
JULY 2000 - REVISED SEPTEMBER 2014
Specifi cations are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specifi c applications.
TISP4xxxL3AJ Overvoltage Protector Series
Figure 2.
OFF-STATE CURRENT
vs
JUNCTION TEMPERATURE
T
J
- Junction Temperature - °C
-25 0 25 50 75 100 125 150
TC4LAG
V
D
= ± V
Figure 3.
T
J
- Junction Temperature - °C
NORMALIZED BREAKOVER VOLTAGE
vs
JUNCTION TEMPERATURE
-25 0 25 50 75 100 125 150
Normalized Breakover Voltage
0.90
0.95
1.00
1.05
1.10
1.15
TC4LAF
Figure 4.
On-State Current - A
ON-STATE CURRENT
vs
ON-STATE VOLTAGE
V
T
- On-State Voltage - V
0.7 1.5 2 3 4 5 7 101
I
T
-
0.5
0.7
1.5
2
3
4
5
7
15
20
30
40
50
1
10
T
A
= 25 °C
t
W
= 100 μs
TC4MAM
'4070
THRU
'4090
'4125
THRU
'4220
'4240
THRU
'4395
Figure 5.
Junction Temperature - °C
T
J
-
-25 0 25 50 75 100 125 150
Normalized Holding Current
0.4
0.5
0.6
0.7
0.8
0.9
1.5
2.0
1.0
TC4LAD
NORMALIZED HOLDING CURRENT
vs
JUNCTION TEMPERATURE
Typical Characteristics

TISP4240L3AJR-S

Mfr. #:
Manufacturer:
Bourns
Description:
Thyristor Surge Protection Devices (TSPD) BIDIRECTIONAL PRTCTR 180volts
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union