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IRG7PH42UD2PBF

P1-P3P4-P6P7-P9P10-P10
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE
FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS
E
G
n-channel
C
V
CES
= 1200V
I
C
= 30A, T
C
= 100°C
V
CE(on)
typ. = 1.69V
Features
• Low V
CE (ON)
Trench IGBT Technology
• Low Switching Losses
• Square RBSOA
• 100% of the parts tested for 4X rated current (I
LM
)
• Positive V
CE (ON)
Temperature co-efficient
• Ultra-low V
F
Diode
• Tight parameter distribution
• Lead Free Package
Benefits
• Device optimized for induction heating and soft switching
applications
• High Efficiency due to Low V
CE(on)
, Low Switching Losses
and Ultra-low V
F
• Rugged transient Performance for increased reliability
• Excellent Current sharing in parallel operation
• Low EMI
G
C
E
Gate Collector Emitter
TO-247AC
IRG7PH42UD2PbF
TO-247AD
IRG7PH42UD2-EP
Absolute Maximum Ratings
Parameter Max. Units
V
CES
Collector-to-Emitter Voltage 1200 V
I
C
@ T
C
= 25°C
Continuous Collector Current 60
I
C
@ T
C
= 100°C
Continuous Collector Current 30
I
CM
Pulse Collector Current, V
GE
=15V
90
I
LM
Clamped Inductive Load Current, V
GE
=20V
120
I
F
@ T
C
= 100°C
Diode Continous Forward Current 10
I
FSM
Diode Non Repetitive Peak Surge Current @ T
J
= 25°C
170
I
FM
Diode Peak Repetitive Forward Current
90
V
GE
Continuous Gate-to-Emitter Voltage ±30 V
P
D
@ T
C
= 25°C
Maximum Power Dissipation 321
P
D
@ T
C
= 100°C
Maximum Power Dissipation 128
T
J
Operating Junction and -55 to +150
T
Storage Temperature Range
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter Min. Typ. Max. Units
R
θ
JC
(IGBT)
Thermal Resistance Junction-to-Case-(each IGBT) ––– ––– 0.39
R
θ
JC
(Diode) Thermal Resistance Junction-to-Case-(each Diode) ––– ––– 0.82
R
θ
CS
Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.24 –––
R
θ
JA
Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– 40 –––
A
W
°C
°C/W
E
G
C
C
E
G
C
C
1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback August 20, 2014
IRG7PH42UD2PbF
IRG7PH42UD2-EP
Form
Quantity
IRG7PH42UD2PbF TO-247AC Tube 25 IRG7PH42UD2PbF
IRG7PH42UD2-EP
TO-247AD
Tube
25
IRG7PH42UD2-EP
Standard Pack
Base part number Package Type Orderable Part Number
2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback August 20, 2014
IRG7PH42UD2PbF/IRG7PH42UD2-EP
Notes:
V
CC
= 80% (V
CES
), V
GE
= 20V, L = 200μH, R
G
= 10Ω.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V
(BR)CES
safely.
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Ref.Fig
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
1200 — — V
V
GE
= 0V, I
C
= 100μA CT4
V
(BR)Transient
Repetitive Transient Collector-to-Emitter Voltage
— — 1300 V
V
GE
= 0V, T
J
=75°C, PW ≤ 10μs
ΔV
(BR)CES
/ΔT
J
Temperature Coeff. of Breakdown Voltage — 1.18 — V/°C
V
GE
= 0V, I
C
= 1mA (25°C-150°C) CT4
—1.692.02
I
C
= 30A, V
GE
= 15V, T
J
= 25°C
4,5,6
—2.07—
I
C
= 30A, V
GE
= 15V, T
J
= 150°C
8,9,10
V
GE(th)
Gate Threshold Voltage 3.0 — 6.0 V
V
CE
= V
GE
, I
C
= 1.0mA
8,9
ΔV
GE(th)
/ΔTJ
Threshold Voltage temp. coefficient — -15 — mV/°C
V
CE
= V
GE
, I
C
= 1.0mA (25°C - 150°C)
10,11
gfe Forward Transconductance — 32 — S
V
CE
= 50V, I
C
= 30A, PW = 60μs
—1.0150
V
GE
= 0V, V
CE
= 1200V
— 450 1000
V
GE
= 0V, V
CE
= 1200V, T
J
= 150°C
—1.081.24
I
F
= 10A
7
—1.01.15
I
F
= 10A, T
J
= 150°C
I
GES
Gate-to-Emitter Leakage Current — — ±100 nA
V
GE
= ±30V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
Ref.Fig
Q
g
Total Gate Charge (turn-on) — 156 234
I
C
= 30A 17
Q
ge
Gate-to-Emitter Charge (turn-on) — 21 32 nC
V
GE
= 15V
CT1
Q
gc
Gate-to-Collector Charge (turn-on) — 69 104
V
CC
= 600V
I
C
= 30A, V
CC
= 600V, V
GE
= 15V
E
off
Turn-Off Switching Loss — 1320 1460
R
G
= 10
Ω
, L = 200μH,T
J
= 25°C
Energy losses include tail
t
d(off)
Turn-Off delay time — 233 292
I
C
= 30A, V
CC
= 600V, V
GE
= 15V
t
f
Fall time — 64 85
R
G
= 10Ω, L = 200μH,T
J
= 25°C
I
C
= 30A, V
CC
= 600V, V
GE
= 15V
E
off
Turn-Off Switching Loss — 2080 — μJ
R
G
= 10Ω, L = 200μH,T
J
= 150°C
CT3
Energy losses include tail
t
d(off)
Turn-Off delay time — 297 — ns
I
C
= 30A, V
CC
= 600V, V
GE
= 15V
WF1
t
f
Fall time — 173 —
R
G
=10
Ω
, L=200μH, T
J
= 150°C
C
ies
Input Capacitance — 3338 —
V
GE
= 0V
16
C
oes
Output Capacitance — 124 — pF
V
CC
= 30V
C
res
Reverse Transfer Capacitance — 75 — f = 1.0Mhz
T
J
= 150°C, I
C
= 120A 3
RBSOA Reverse Bias Safe Operating Area FULL SQUARE
V
CC
= 960V, Vp =1200V
CT2
Rg = 10
Ω
, V
GE
= +15V to 0V
V
μJ
ns
V
CE(on)
Collector-to-Emitter Saturation Voltage
I
CES
Collector-to-Emitter Leakage Current
V
FM
Diode Forward Voltage Drop
CT3
Conditions
μA
V
3 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback August 20, 2014
IRG7PH42UD2PbF/IRG7PH42UD2-EP
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
Fig. 2 - Power Dissipation vs. Case
Temperature
Fig. 3 - Reverse Bias SOA
T
J
= 150°C; V
GE
=15V
Fig. 4 - Typ. IGBT Output Characteristics
T
J
= -40°C; tp = 80μs
Fig. 5 - Typ. IGBT Output Characteristics
T
J
= 25°C; tp = 80μs
Fig. 6 - Typ. IGBT Output Characteristics
T
J
= 150°C; tp = 80μs
0 25 50 75 100 125 150
T
C
(°C)
0
10
20
30
40
50
60
70
I
C
(
A
)
10 100 1000 10000
V
CE
(V)
1
10
100
1000
I
C
(
A
)
0246810
V
CE
(V)
0
20
40
60
80
100
120
I
C
E
(
A
)
V
GE
= 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0246810
V
CE
(V)
0
20
40
60
80
100
120
I
C
E
(
A
)
V
GE
= 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0246810
V
CE
(V)
0
20
40
60
80
100
120
I
C
E
(
A
)
V
GE
= 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0 20 40 60 80 100 120 140 160
T
C
(°C)
0
50
100
150
200
250
300
350
P
t
o
t
(
W
)
P1-P3P4-P6P7-P9P10-P10

IRG7PH42UD2PBF

Mfr. #:
Buy IRG7PH42UD2PBF
Manufacturer:
Infineon Technologies
Description:
IGBT 1200V 60A 321W TO247AC
Lifecycle:
New from this manufacturer.
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