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IRG7PH42UD2PBF

P1-P3P4-P6P7-P9P10-P10
4 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback August 20, 2014
IRG7PH42UD2PbF/IRG7PH42UD2-EP
Fig. 7 - Typ. Diode Forward Voltage Drop
Characteristics
Fig. 8 - Typical V
CE
vs. V
GE
T
J
= -40°C
Fig. 9 - Typical V
CE
vs. V
GE
T
J
= 25°C
Fig. 10 - Typical V
CE
vs. V
GE
T
J
= 150°C
Fig. 11 - Typ. Transfer Characteristics
V
CE
= 50V; tp = 10μs
Fig. 12 - Typ. Energy Loss vs. I
C
T
J
= 150°C; L = 200μH; V
CE
= 600V, R
G
= 10Ω; V
GE
= 15V
5 101520
V
GE
(V)
0
2
4
6
8
10
12
14
V
C
E
(
V
)
I
CE
= 15A
I
CE
= 30A
I
CE
= 60A
5101520
V
GE
(V)
0
2
4
6
8
10
12
14
V
C
E
(
V
)
I
CE
= 15A
I
CE
= 30A
I
CE
= 60A
5101520
V
GE
(V)
0
2
4
6
8
10
12
14
V
C
E
(
V
)
I
CE
= 15A
I
CE
= 30A
I
CE
= 60A
0 255075
I
C
(A)
1000
1500
2000
2500
3000
3500
4000
4500
E
n
e
r
g
y
(
μ
J
)
E
OFF
4 6 8 10 12
V
GE
, Gate-to-Emitter Voltage
(V)
0
20
40
60
80
100
120
I
C
E
,
C
o
l
l
e
c
t
o
r
-
t
o
-
E
m
i
t
t
e
r
C
u
r
r
e
n
t
(
A
)
T
J
= 25°C
T
J
= 150°C
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V
F
(V)
0.1
1
10
100
1000
I
F
(
A
)
25°C
150°C
5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback August 20, 2014
IRG7PH42UD2PbF/IRG7PH42UD2-EP
Fig. 17 - Typical Gate Charge
vs. V
GE
I
CE
= 30A; L = 600μH
Fig. 13 - Typ. Switching Time vs. I
C
T
J
= 150°C; L = 200μH; V
CE
= 600V, R
G
= 10Ω; V
GE
= 15V
Fig. 14 - Typ. Energy Loss vs. R
G
T
J
= 150°C; L = 200μH; V
CE
= 600V, I
CE
= 30A; V
GE
= 15V
Fig. 15 - Typ. Switching Time vs. R
G
T
J
= 150°C; L = 200μH; V
CE
= 600V, I
CE
= 30A; V
GE
= 15V
Fig. 16 - Typ. Capacitance vs. V
CE
V
GE
= 0V; f = 1MHz
0 25 50 75 100 125
Rg (Ω)
1000
1500
2000
2500
3000
3500
4000
4500
5000
5500
6000
E
n
e
r
g
y
(
μ
J
)
E
OFF
0 100 200 300 400 500 600
V
CE
(V)
1
10
100
1000
10000
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Cies
Coes
Cres
0 25 50 75 100 125 150 175
Q
G
, Total Gate Charge (nC)
0
2
4
6
8
10
12
14
16
V
G
E
,
G
a
t
e
-
t
o
-
E
m
i
t
t
e
r
V
o
l
t
a
g
e
(
V
)
V
CES
= 600V
V
CES
= 400V
0 10 20 30 40 50 60 70
I
C
(A)
100
1000
S
w
i
c
h
i
n
g
T
i
m
e
(
n
s
)
td
OFF
t
F
0 20 40 60 80 100 120
R
G
(Ω)
10
100
1000
10000
S
w
i
c
h
i
n
g
T
i
m
e
(
n
s
)
td
OFF
t
F
6 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback August 20, 2014
IRG7PH42UD2PbF/IRG7PH42UD2-EP
Fig 18. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
Fig. 19. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
1E-006 1E-005 0.0001 0.001 0.01 0.1
t
1
, Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
C
)
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W) τi (sec)
0.1306 0.000313
0.1752 0.002056
0.0814 0.008349
0.0031 0.0431
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
τ
3
τ
3
R
1
R
1
R
2
R
2
R
3
R
3
Ci i/Ri
Ci= τi/Ri
τ
τ
C
τ
4
τ
4
R
4
R
4
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t
1
, Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
10
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
C
)
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W) τi (sec)
0..344 0.00112
0.328 0.003118
0.147 0.015806
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
τ
3
τ
3
R
1
R
1
R
2
R
2
R
3
R
3
τ
τ
C
Ci i/Ri
Ci= τi/Ri
P1-P3P4-P6P7-P9P10-P10

IRG7PH42UD2PBF

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Buy IRG7PH42UD2PBF
Manufacturer:
Infineon Technologies
Description:
IGBT 1200V 60A 321W TO247AC
Lifecycle:
New from this manufacturer.
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