CAT28C64B
4
Doc. No. MD-1011, Rev. I
© 2009 SCILLC. All rights reserved.
Characteristics subject to change without notice
D.C. OPERATING CHARACTERISTICS
V
CC
= 5V ±10%, unless otherwise specified.
Limits
Symbol Parameter Min. Typ. Max. Units Test Conditions
I
CC
V
CC
Current (Operating, TTL) 30 mA CE = OE = V
IL
,
f = 1/t
RC
min, All I/Os Open
I
CCC
(1)
V
CC
Current (Operating, CMOS) 25 mA CE = OE = V
ILC
,
f = 1/t
RC
min, All I/Os Open
I
SB
V
CC
Current (Standby, TTL) 1 mA CE = V
IH
, All I/Os Open
I
SBC
(2)
V
CC
Current (Standby, CMOS) 100 µA CE = V
IHC
,
All I/Os Open
I
LI
Input Leakage Current 10 10 µAV
IN
= GND to V
CC
I
LO
Output Leakage Current 10 10 µAV
OUT
= GND to V
CC
,
CE = V
IH
V
IH
(2)
High Level Input Voltage 2 V
CC
+0.3 V
V
IL
(1)
Low Level Input Voltage 0.3 0.8 V
V
OH
High Level Output Voltage 2.4 V I
OH
= 400µA
V
OL
Low Level Output Voltage 0.4 V I
OL
= 2.1mA
V
WI
Write Inhibit Voltage 3.5 V
Note:
(1) V
ILC
= 0.3V to +0.3V.
(2) V
IHC
= V
CC
0.3V to V
CC
+0.3V.
CAT28C64B
5
Doc. No. MD-1011, Rev. I
© 2009 SCILLC. All rights reserved.
Characteristics subject to change without notice
A.C. CHARACTERISTICS, Read Cycle
V
CC
= 5V ±10%, unless otherwise specified.
28C64B-90 28C64B-12 28C64B-15
Symbol Parameter Min. Max. Min. Max. Min. Max. Units
t
RC
Read Cycle Time 90 120 150 ns
t
CE
CE Access Time 90 120 150 ns
t
AA
Address Access Time 90 120 150 ns
t
OE
OE Access Time 50 60 70 ns
t
LZ
(1)
CE Low to Active Output 0 0 0 ns
t
OLZ
(1)
OE Low to Active Output 0 0 0 ns
t
HZ
(1)(2)
CE High to High-Z Output
50 50 50 ns
t
OHZ
(1)(2)
OE High to High-Z Output 50 50 50 ns
t
OH
(1)
Output Hold from Address Change 0 0 0 ns
Figure 1. A.C. Testing Input/Output Waveform(3)
INPUT PULSE LEVELS REFERENCE POINTS
2.0 V
0.8 V
V
CC
- 0.3V
0.0 V
Figure 2. A.C. Testing Load Circuit (example)
Note:
(1) This parameter is tested initially and after a design or process change that affects the parameter.
(2) Output floating (High-Z) is defined as the state when the external data line is no longer driven by the output buffer.
(3) Input rise and fall times (10% and 90%) < 10 ns.
1.3V
DEVICE
UNDER
TEST
1N914
3.3K
C
L
= 100 pF
OUT
C
L
INCLUDES JIG CAPACITANCE
CAT28C64B
6
Doc. No. MD-1011, Rev. I
© 2009 SCILLC. All rights reserved.
Characteristics subject to change without notice
A.C. CHARACTERISTICS, Write Cycle
V
CC
= 5V ±10%, unless otherwise specified.
28C64B-90 28C64B-12 28C64B-15
Symbol Parameter Min. Max. Min. Max. Min. Max. Units
t
WC
Write Cycle Time 5 5 5 ms
t
AS
Address Setup Time 0 0 0 ns
t
AH
Address Hold Time 100 100 100 ns
t
CS
CE Setup Time 0 0 0 ns
t
CH
CE Hold Time 0 0 0 ns
t
CW
(2)
CE Pulse Time 110 110 110 ns
t
OES
OE Setup Time 0 0 0 ns
t
OEH
OE Hold Time 0 0 0 ns
t
WP
(2)
WE Pulse Width 110 110 110 ns
t
DS
Data Setup Time 60 60 60 ns
t
DH
Data Hold Time 0 0 0 ns
t
INIT
(1)
Write Inhibit Period After Power-up 5 10 5 10 5 10 ms
t
BLC
(1)(3)
Byte Load Cycle Time .05 100 .05 100 .05 100 µs
Note:
(1) This parameter is tested initially and after a design or process change that affects the parameter.
(2) A write pulse of less than 20ns duration will not initiate a write cycle.
(3) A timer of duration t
BLC
max. begins with every LOW to HIGH transition of WE. If allowed to time out, a page or byte write will begin;
however a transition from HIGH to LOW within t
BLC
max. stops the timer.

CAT28C64BGI90

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
EEPROM (8kx8) 64K 5V 90ns
Lifecycle:
New from this manufacturer.
Delivery:
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