CAT28C64B
8
Doc. No. MD-1011, Rev. I
© 2009 SCILLC. All rights reserved.
Characteristics subject to change without notice
ADDRESS
CE
OE
WE
DATA OUT
t
AS
DATA IN
DATA VALID
HIGH-Z
t
AH
t
WC
t
OEH
t
DH
t
DS
t
OES
t
BLC
t
CH
t
CS
t
CW
Page Write
The page write mode of the CAT28C64B (essentially an
extended BYTE WRITE mode) allows from 1 to 32 bytes
of data to be programmed within a single EEPROM write
cycle. This effectively reduces the byte-write time by a
factor of 32.
Following an initial WRITE operation (WE pulsed low, for
t
WP
, and then high) the page write mode can begin by
issuing sequential WE pulses, which load the address
and data bytes into a 32 byte temporary buffer. The page
address where data is to be written, specified by bits A
5
to A
12
, is latched on the last falling edge of WE. Each
byte within the page is defined by address bits A
0
to A
4
(which can be loaded in any order) during the first and
subsequent write cycles. Each successive byte load
cycle must begin within t
BLC MAX
of the rising edge of the
preceding WE pulse. There is no page write window
limitation as long as WE is pulsed low within t
BLC MAX
.
Upon completion of the page write sequence, WE must
stay high a minimum of t
BLC MAX
for the internal auto-
matic program cycle to commence. This programming
cycle consists of an erase cycle, which erases any data
that existed in each addressed cell, and a write cycle,
which writes new data back into the cell. A page write will
only write data to the locations that were addressed and
will not rewrite the entire page.
Figure 5. Byte Write Cycle [CE Controlled]
Figure 6. Page Mode Write Cycle
OE
CE
WE
ADDRESS
I/O
t
WP
t
BLC
BYTE 0 BYTE 1 BYTE 2 BYTE n BYTE n+1 BYTE n+2
LAST BYTE
t
WC
