© Semiconductor Components Industries, LLC, 2006
July, 2006 - Rev. 2
1 Publication Order Number:
NTLJF3117P/D
NTLJF3117P
Power MOSFET and
Schottky Diode
-20 V, -4.1 A, P-Channel, with 2.0 A
Schottky Barrier Diode, 2x2 mm,
mCool] Package
Features
•FETKYt Configuration with MOSFET plus Low Vf Schottky Diode
•mCOOLt Package Provides Exposed Drain Pad for Excellent
Thermal Conduction
•2x2 mm Footprint Same as SC-88 Package Design
•Independent Pinout Provides Circuit Design Flexibility
•Low Profile (< 0.8 mm) for Easy Fit in Thin Environment
•High Current Schottky Diode: 2 A Current Rating
•This is a Pb-Free Device
Applications
•Optimized for Portable Applications like Cell Phones, Digital
Cameras, Media Players, etc.
•DC-DC Buck Circuit
•Li-Ion Battery Applications
•Color Display and Camera Flash Regulators
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain-to-Source Voltage V
DSS
-20 V
Gate-to-Source Voltage V
GS
±8.0 V
Continuous Drain
Current (Note 1)
Steady
State
T
A
= 25°C
I
D
-3.3
A
T
A
= 85°C -2.4
t ≤ 5 s T
A
= 25°C -4.1
Power Dissipation
(Note 1)
Steady
State
T
A
= 25°C
P
D
1.5
W
t ≤ 5 s 2.3
Continuous Drain
Current (Note 2)
Steady
State
T
A
= 25°C
I
D
-2.3
A
T
A
= 85°C -1.6
Power Dissipation
(Note 2)
T
A
= 25°C
P
D
0.71 W
Pulsed Drain Current
t
p
= 10 ms
I
DM
-20 A
Operating Junction and Storage Temperature T
J
, T
STG
-55 to
150
°C
Source Current (Body Diode) (Note 2) I
S
-1.9 A
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
2. Surface Mounted on FR4 Board using the minimum recommended pad size
of 30 mm
2
, 2 oz Cu.
1
2
3
6
5
4
A
N/C
D
K
G
S
http://onsemi.com
-20 V
30 V
135 mW @ -2.5 V
100 mW @ -4.5 V
2.0 A
R
DS(on)
MAX
-4.1 A
0.47 V
I
D
MAX (Note 1)V
(BR)DSS
MOSFET
SCHOTTKY DIODE
V
R
MAX I
F
MAXV
F
TYP
200 mW @ -1.8 V
G
S
P-CHANNEL MOSFET
D
K
A
SCHOTTKY DIODE
JH = Specific Device Code
M = Date Code
G = Pb-Free Package
(Note: Microdot may be in either location)
JHMG
G
1
2
3
6
5
4
WDFN6
CASE 506AN
MARKING
DIAGRAM
(Top View)
1
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
ORDERING INFORMATION
PIN CONNECTIONS
K
D