NTLJF3117PTAG

NTLJF3117P
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4
TYPICAL PERFORMANCE CURVES (T
J
= 25°C unless otherwise noted)
12
0.15
5
1.4
1.6
1.2
0.8
0.6
10000
0 4.521
-V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
-I
D
, DRAIN CURRENT (AMPS)
0
-V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
-I
D
, DRAIN CURRENT (AMPS)
1.0 2.01.5
Figure 3. On-Resistance versus Drain Current
-I
D
, DRAIN CURRENT (AMPS)
Figure 4. On-Resistance versus Drain Current
and Gate Voltage
-I
D
, DRAIN CURRENT (AMPS)
R
DS(on)
, DRAIN-TO-SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN-TO-SOURCE RESISTANCE (W)
Figure 5. On-Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
Figure 6. Drain-to-Source Leakage Current
versus Voltage
-V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
R
DS(on)
, DRAIN-TO-SOURCE RESISTANCE
(NORMALIZED)
-I
DSS
, LEAKAGE (nA)
-50 50250-25 75 125100
1
212104
3
1
2
V
DS
10 V
T
J
= 25°C
T
J
= -55°C
T
J
= 125°C
V
GS
= 0 V
I
D
= -2.2 A
V
GS
= -4.5 V
3
T
J
= 100°C
T
J
= 150°C
2
0
1.5
T
J
= 25°C
20
V
GS
= -1.9 V to -6 V
-1.5 V
3
1000
4
4
0
4
T
J
= 25°C
150
10
2.5
-1.4 V
-1.3 V
-1.2 V
T
J
= 25°C
V
GS
= -4.5 V
T
J
= -55°C
T
J
= 100°C
0
V
GS
= -4.5 V
V
GS
= -2.5 V
6 8 14 16 18
20.5
2.5 3
5
3.5
-1.6 V
-1.7 V
1
3
5
0.05
100
2.51.50.5
0.5
1.5
2.5
3.5
4.5
-1.8 V
0.1
0.05
0.1
0.04
0.07
0.06
0.08
0.09
4
1.0
NTLJF3117P
http://onsemi.com
5
TYPICAL PERFORMANCE CURVES (T
J
= 25°C unless otherwise noted)
5 5 15 20
GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
Figure 7. Capacitance Variation
800
0
V
GS
V
DS
1000
400
010
V
GS
= 0 V
T
J
= 25°C
C
oss
C
rss
1200
C
iss
Figure 8. Gate-To-Source and Drain-To-Source
Voltage versus Total Charge
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
R
G
, GATE RESISTANCE (OHMS)
1 10 100
1000
1
t, TIME (ns)
100
t
r
t
d(off)
t
d(on)
t
f
10
V
DD
= -15 V
I
D
= -2.2 A
V
GS
= -4.5 V
2.5
0
0
-V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
V
GS
= 0 V
Figure 10. Diode Forward Voltage versus Current
1.0
1
0.6
2
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
0.1 1 100
-V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
1
100
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10
10
T
C
= 25°C
T
J
= 150°C
SINGLE PULSE
1 ms
100 ms
10 ms
dc
10 ms
T
J
= 25°C
0.1
0.01
-V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
0
3
0
Q
G
, TOTAL GATE CHARGE (nC)
5
4
43
I
D
= -2.2 A
T
J
= 25°C
V
GS
Q
GS
Q
GD
QT
2
1
5
8
0
20
12
4
-V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
16
3
0.80.40.2
-I
D
, DRAIN CURRENT (AMPS)
-I
s
, SOURCE CURRENT (AMPS)
600
200
1.5
0.5
T
J
= 150°C
621
0.1 0.7 0.90.50.3
V
DS
= 0 V
*See Note 2 on Page 1
NTLJF3117P
http://onsemi.com
6
TYPICAL PERFORMANCE CURVES (T
J
= 25°C unless otherwise noted)
Figure 12. Thermal Response
r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE
t, TIME (s)
1
1000
0.1
0.2
0.02
D = 0.5
0.05
0.01
SINGLE PULSE
R
q
JA
(t) = r(t) R
q
JA
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
A
= P
(pk)
R
q
JA
(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
100 1000100.10.0010.00010.000001
0.1
100
10
10.010.00001
*See Note 2 on Page 1

NTLJF3117PTAG

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
MOSFET PFET 20V 4.1A 106MO 2X2
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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