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BYQ30E-200,127

P1-P3P4-P6P7-P9P10-P12
IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV), WeEn Semiconductors, which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW - For www.nxp.com use www.ween-semi.com
Email - For salesaddresses@nxp.com use salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V. {year}. All rights reserved” becomes “
©
WeEn
Semiconductors Co., Ltd. {year}. All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
1. Product profile
1.1 General description
Dual ultrafast power diode in a SOT78 (TO-220AB) plastic package
1.2 Features and benefits
Fast switching
High thermal cycling performance
Low forward volt drop
Low thermal resistance
Reverse surge capability
Soft recovery characteristic
1.3 Applications
Output rectifiers in high-frequency
switched-mode power supplies
1.4 Quick reference data
BYQ30E-200
Dual ultrafast power diode
Rev. 4 — 1 September 2010 Product data sheet
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
RRM
repetitive peak
reverse voltage
--200V
I
O(AV)
average output
current
squire-wave pulse; δ =0.5;
T
mb
≤ 104 °C; both diodes
conducting;
see Figure 1
; see Figure 2
--16A
Static characteristics
V
F
forward voltage I
F
=8A; T
j
=150°C;
see Figure 4
- 0.84 0.95 V
Dynamic characteristics
t
rr
reverse recovery
time
I
R
=1A; I
F
=0.5A;
I
R(meas)
= 0.25 A; T
j
=25°C;
step recovery; see Figure 6
- 1222ns
BYQ30E-200 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 4 — 1 September 2010 2 of 11
NXP Semiconductors
BYQ30E-200
Dual ultrafast power diode
2. Pinning information
3. Ordering information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 A1 anode 1
SOT78 (TO-220AB)
2 K cathode
3 A2 anode 2
mb K mounting base; cathode
12
mb
3
sym125
A2A1
K
Table 3. Ordering information
Type number Package
Name Description Version
BYQ30E-200 TO-220AB plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
SOT78
BYQ30E-200/H TO-220AB plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
SOT78
P1-P3P4-P6P7-P9P10-P12

BYQ30E-200,127

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Buy BYQ30E-200,127
Manufacturer:
WeEn Semiconductors
Description:
Rectifiers RAIL REC-EPI
Lifecycle:
New from this manufacturer.
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