BYQ30E-200 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 4 — 1 September 2010 3 of 11
NXP Semiconductors
BYQ30E-200
Dual ultrafast power diode
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
RRM
repetitive peak reverse voltage - 200 V
V
RWM
crest working reverse voltage - 200 V
V
R
reverse voltage DC - 200 V
I
O(AV)
average output current squire-wave pulse; δ = 0.5 ;
T
mb
≤ 104 °C; both diodes conducting;
see Figure 1
;
see Figure 2
-16A
I
FRM
repetitive peak forward current squire-wave pulse; δ = 0.5 ; t
p
= 25 µs;
T
mb
≤ 104 °C; per diode
-16A
I
FSM
non-repetitive peak forward
current
t
p
= 10 ms; sine-wave pulse;
T
j(init)
= 25 °C; per diode
-80A
t
p
= 8.3 ms; sine-wave pulse;
T
j(init)
= 25 °C; per diode
-88A
I
RRM
repetitive peak reverse current δ = 0.001 ; t
p
= 2 μs-0.2A
I
RSM
non-repetitive peak reverse
current
t
p
= 100 μs-0.2A
T
stg
storage temperature -40 150 °C
T
j
junction temperature - 150 °C
V
ESD
electrostatic discharge voltage HBM; all pins; C = 250 pF; R = 1.5 kΩ -8kV
Fig 1. Forward power dissipation as a function of
average forward current; square waveform;
maximum values
Fig 2. Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
003aae838
I
F(AV)
(A)
01284
4
8
12
P
tot
(W)
0
δ = 1.0
0.2
0.1
0.5
I
F(AV)
(A)
08624
003aae839
4
8
12
P
tot
(W)
0
a = 1.57
1.9
2.2
2.8
4
