AD8007/AD8008
Rev. E | Page 6 of 20
ABSOLUTE MAXIMUM RATINGS
Table 3.
Parameter Rating
Supply Voltage 12.6 V
Power Dissipation See Figure 5
Common-Mode Input Voltage ±V
S
Differential Input Voltage ±1.0 V
Output Short-Circuit Duration See Figure 5
Storage Temperature Range −65°C to +125°C
Operating Temperature Range −40°C to +85°C
Lead Temperature (Soldering, 10 sec) 300°C
RMS output voltages should be considered. If R
L
is referenced to
V
S
, as in single-supply operation, then the total drive power is
V
S
× I
OUT
.
If the rms signal levels are indeterminate, then consider the
worst case, when V
OUT
= V
S
/4 for R
L
to midsupply
L
S
SS
D
R
V
IVP
2
4
)(
⎟
⎠
⎞
⎜
⎝
⎛
+×=
In single-supply operation, with R
L
referenced to V
S
, worst case is
V
OUT
= V
S
/2.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
Airflow increases heat dissipation, effectively reducing θ
JA
. In
addition, more metal directly in contact with the package leads
from metal traces, through-holes, ground, and power planes
reduces the θ
JA
. Care must be taken to minimize parasitic
capacitances at the input leads of high speed op amps, see the
Layout Considerations section.
Figure 5 shows the maximum safe power dissipation in the
package vs. the ambient temperature for the SOIC-8 (125°C/W),
MSOP-8 (150°C/W), and SC70-5 (210°C/W) packages on a
JEDEC standard 4-layer board. θ
JA
values are approximations.
MAXIMUM POWER DISSIPATION
The maximum safe power dissipation in the AD8007/AD8008
packages is limited by the associated rise in junction temperature
(T
J
) on the die. The plastic encapsulating the die locally reaches
the junction temperature. At approximately 150°C, which is the
glass transition temperature, the plastic changes its properties.
Even temporarily exceeding this temperature limit can change
the stresses that the package exerts on the die, permanently
shifting the parametric performance of the AD8007/AD8008.
Exceeding a junction temperature of 175°C for an extended
time can result in changes in the silicon devices, potentially
causing failure.
AMBIENT TEMPERATURE (°C)
2.0
1.5
0
00106– –40
MAXIMUM POWER DISSIPATION (W)
–20 0 20 40 60 80
1.0
0.5
SOIC-8
SC70-5
MSOP-8
02866-005
The still-air thermal properties of the package and PCB (θ
JA
),
ambient temperature (T
A
), and the total power dissipated in the
package (P
D
) determine the junction temperature of the die.
The junction temperature can be calculated as
T
J
= T
A
+ (P
D
× θ
JA
)
Figure 5. Maximum Power Dissipation vs. Temperature for a 4-Layer Board
The power dissipated in the package (P
D
) is the sum of the
quiescent power dissipation and the power dissipated in the
package due to the load drive for all outputs. The quiescent
power is the voltage between the supply pins (V
S
) times the
quiescent current (I
S
). Assuming the load (R
L
) is referenced to
midsupply, the total drive power is V
S
/2 × I
OUT
, some of which is
dissipated in the package and some in the load (V
OUT
× I
OUT
).
The difference between the total drive power and the load
power is the drive power dissipated in the package.
OUTPUT SHORT CIRCUIT
Shorting the output to ground or drawing excessive current for
the AD8007/AD8008 will likely cause catastrophic failure.
ESD CAUTION
P
D
= Quiescent Power + (Total Drive Power − Load Power)
L
OUT
L
OUTS
SS
D
R
V
R
V
V
IVP
2
2
)( −
⎟
⎟
⎠
⎞
⎜
⎜
⎝
⎛
×+×=
