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SST12LP14A-QVCE

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P20
©2012 Silicon Storage Technology, Inc. DS75045A 02/12
16
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP14A
Data Sheet
A
Microchip Technology Company
Typical Performance Characteristics
Test Conditions: V
CC
= 3.3V, T
A
=25°C, 1 Mbps 802.11B CCK signal
Figure 17:CH14 Detector Characteristics Over Temperature
Figure 18:Detector Characteristics Over Temperature and Frequency
0.60
0.70
0.80
0.90
1.00
1.10
1.20
1.30
1.40
1.50
1.60
0 2 4 6 8 1012141618202224
Freq = 2.484 GHz (0 C)
Freq = 2.484 GHz (25 C)
Freq = 2.484 GHz (85 C)
1300 CH14 CCK.0.0
Output Power (dBm)
Detector Voltage (V)
0.60
0.70
0.80
0.90
1.00
1.10
1.20
1.30
1.40
1.50
1.60
0 2 4 6 8 1012141618202224
Output Power (dBm)
Detector Voltage (V)
1300 CHA CCK.0.0
Freq = 2.442 GHz (0 C)
Freq = 2.412 GHz (25 C)
Freq = 2.484 GHz (85 C)
Freq = 2.442 GHz (85 C)
Freq = 2.412 GHz (85 C)
Freq = 2.484 GHz (25 C)
Freq = 2.442 GHz (25 C)
Freq = 2.412 GHz (0 C)
Freq = 2.484 GHz (0 C)
©2012 Silicon Storage Technology, Inc. DS75045A 02/12
17
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP14A
Data Sheet
A
Microchip Technology Company
Figure 19:Typical Schematic for High-Power/High-Efficiency 802.11b/g Applications
50 /225 mil
RFOUT 50
100 pF
47 pF
2.4 pF
50 / 120 mil
50 RFin
VREG
10 µF
0.1 µF
Vcc
15 nH / 0805
R1=110
0.1 µF
Det
10 pF
1300 Schematic 1.1
Suggested operation conditions:
1.V
CC
=3.3V
2. Center slug to RF ground
3.VREG=2.85V with R1=110
Can be replaced by a ~1.2 nH
chip inductor for compactness
47 pF
2.0 pF
0.1 µF
R2=50
2
56 8
16 15
1
14
49
11
12
10
13
3
Bias Circuit
7
©2012 Silicon Storage Technology, Inc. DS75045A 02/12
18
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP14A
Data Sheet
A
Microchip Technology Company
Product Ordering Information
Valid combinations for SST12LP14A
SST12LP14A-QVCE
SST12LP14A Evaluation Kits
SST12LP14A-QVCE-K
Note:Valid combinations are those products in mass production or will be in mass production. Consult your SST
sales representative to confirm availability of valid combinations and to determine availability of new combi-
nations.
SST 12 LP 08A - QX8E
XX XX XXX
-
XXXX
Environmental Attribute
E
1
= non-Pb contact (lead) finish
Package Modifier
C = 16 contact
Package Type
QV = VQFN
Version
Product Family Identifier
Product Type
P = Power Amplifier
Voltage
L = 3.0-3.6V
Frequency of Operation
2 = 2.4 GHz
Product Line
1 = RF Products
1. Environmental suffix “E” denotes non-Pb sol-
der. SST non-Pb solder devices are “RoHS
Compliant”.
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P20

SST12LP14A-QVCE

Mfr. #:
Buy SST12LP14A-QVCE
Manufacturer:
Microchip Technology
Description:
RF Amplifier 2.4-2.5GHz 3.3V 210mA ICC 802.11 b/g
Lifecycle:
New from this manufacturer.
Delivery:
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