©2012 Silicon Storage Technology, Inc. DS75045A 02/12
4
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP14A
Data Sheet
A
Microchip Technology Company
Pin Assignments
Figure 2: Pin Assignments for 16-contact VQFN
Pin Descriptions
Table 1: Pin Description
Symbol Pin No. Pin Name Type
1
1. I=Input, O=Output
Function
GND 0 Ground The center pad should be connected to RF ground
with several low inductance, low resistance vias
NC 1 No Connection Unconnected pin
RFIN 2 I RF input, DC decoupled
RFIN 3 I RF input, DC decoupled
NC 4 No Connection Unconnected pin
VCCb 5 Power Supply PWR Supply voltage for bias circuit
VREF 6 PWR 1
st
and 2
nd
stage idle current control
VREF 7 PWR 1
st
and 2
nd
stage idle current control
NC 8 No Connection Unconnected pin
Det 9 O On-chip power detector
RFOUT 10 O RF output
RFOUT 11 O RF output
VCC2 12 Power Supply PWR Power supply, 2
nd
stage
NC 13 No Connection Unconnected pin
NC 14 No Connection Unconnected pin
NC 15 No Connection Unconnected pin
VCC1 16 Power Supply PWR Power supply, 1
st
stage
T1.0 75045
56 8
16
VCC1
15 14
NC
NC
9
11
12
10
13
NC
VCCb
VREF
VREF
NC
VCC2
RFOUT
RFOUT
Det
2
1
4
3
NC
RFIN
RFIN
NC
7
1300 16-vqfn P1.0
Top View
(contacts facing down)
RF and DC GND
0
©2012 Silicon Storage Technology, Inc. DS75045A 02/12
5
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP14A
Data Sheet
A
Microchip Technology Company
Electrical Specifications
The AC and DC specifications for the power amplifier interface signals. Refer to Table 3 for the DC voltage and
current specifications. Refer to Figures 3 through 18 for the RF performance.
Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute
Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these conditions or conditions greater than those defined in the
operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating con-
ditions may affect device reliability.)
Input power to pins 2 and 3 (P
IN
)...............................................+5dBm
Average output power (P
OUT
)
1
................................................+26dBm
1. Never measure with CW source. Pulsed single-tone source with <50% duty cycle is recommended. Exceeding the max-
imum rating of average output power could cause permanent damage to the device.
Supply Voltage at pins 5, 12, and 16 (V
CC
)..................................-0.3V to +4.6V
Reference voltage to pins 6 and 7 (V
REF
)...................................-0.3V to +3.3V
DC supply current (I
CC
)...................................................... 400mA
Operating Temperature (T
A
)............................................ -40ºC to +85ºC
Storage Temperature (T
STG
)........................................... -40ºC to +120ºC
Maximum Junction Temperature (T
J
) ........................................... +150ºC
Surface Mount Solder Reflow Temperature ...........................260°C for 10 seconds
Table 2: Operating Range
Range Ambient Temp V
DD
Industrial -40°C to +85°C 3.3V
T2.1 75045
Table 3: DC Electrical Characteristics
Symbol Parameter Min. Typ Max. Unit Test Conditions
V
CC
Supply Voltage at pins 5, 12, 16 3.0 3.3 4.2 V
I
CC
Supply Current
for 802.11g, 22 dBm 210 mA
for 802.11b, 23 dBm 230 mA
I
CQ
Idle current for 802.11g to meet EVM<4% @ 21dBm 70 mA
I
OFF
Shut down current 0.1 µA
V
REG
Reference Voltage for, with 110 resistor 2.75 2.85 2.95 V
T3.1 75045
©2012 Silicon Storage Technology, Inc. DS75045A 02/12
6
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP14A
Data Sheet
A
Microchip Technology Company
Table 4: AC Electrical Characteristics for Configuration
Symbol Parameter Min. Typ Max. Unit
F
L-U
Frequency range 2400 2485 MHz
P
OUT
Output power
@ PIN = -6 dBm 11b signals 22 dBm
@ PIN = -7 dBm 11g signals 21 dBm
G Small signal gain 28 29 dB
G
VAR1
Gain variation over band (2400~2485 MHz) ±0.5 dB
G
VAR2
Gain ripple over channel (20 MHz) 0.2 dB
ACPR Meet 11b spectrum mask 22 23 dBm
Meet 11g OFDM 54 Mbps spectrum mask 22 23 dBm
Added EVM @ 21 dBm output with 11g OFDM 54 Mbps signal 3 %
2f, 3f, 4f, 5f Harmonics at 22 dBm, without external filters -40 dBc
T4.2 75045

SST12LP14A-QVCE

Mfr. #:
Manufacturer:
Microchip Technology
Description:
RF Amplifier 2.4-2.5GHz 3.3V 210mA ICC 802.11 b/g
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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