IRLZ44ZPBF Datasheet IRLZ44ZPBF, IRLZ44ZSTRLPBF, IRLZ44ZLPBF | P1-P3

10/01/10

www.irf.com 1

HEXFET

®

Power MOSFET

V

DSS

= 55V

R

DS(on)

= 13.5mΩ

I

D

= 51A

This HEXFET

®

Power MOSFET utilizes the latest

processing techniques to achieve extremely low

on-resistance per silicon area. Additional features

of this design are a 175°C junction operating

temperature, fast switching speed and improved

repetitive avalanche rating. These features combine

to make this design an extremely efficient and

reliable device for use in a wide variety of

applications.

S

D

G

Description

Logic Level

Advanced Process Technology

Ultra Low On-Resistance

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free

Features

IRLZ44ZPbF

IRLZ44ZSPbF

IRLZ44ZLPbF

D

2

Pak

IRLZ44ZSPbF

TO-220AB

IRLZ44ZPbF

TO-262

IRLZ44ZLPbF

Absolute Maximum Ratings

Parameter Units

I

D

@ T

C

= 25°C

Continuous Drain Current, V

GS

@ 10V

(Silicon Limited)

I

D

@ T

C

= 100°C

Continuous Drain Current, V

GS

@ 10V

A

I

DM

P

u

l

se

d D

ra

i

n

C

urren

t

P

D

@T

C

= 25°C

Power Dissipation W

Linear Derating Factor W/°C

V

GS

Gate-to-Source Volta

g

e V

E

AS (Thermally limited)

Si

n

gl

e

P

u

l

se

A

va

l

anc

h

e

E

ner

gy

mJ

E

AS

(Tested )

Si

n

gl

e

P

u

l

se

A

va

l

anc

h

e

E

ner

gy T

es

t

e

d V

a

l

ue

I

AR

A

va

l

anc

h

e

C

urren

t

A

E

AR

R

epe

titi

ve

A

va

l

anc

h

e

E

ner

gy

mJ

T

J

Operatin

g

Junction and

T

STG

Stora

g

e Temperature Ran

g

e°C

Soldering Temperature, for 10 seconds

Mountin

g

Tor

q

ue, 6-32 or M3 screw

Thermal Resistance

Parameter Typ. Max. Units

R

θJC

Junction-to-Case

––– 1.87 °C/W

R

θCS

Case-to-Sink, Flat Greased Surface

0.50 –––

R

θJA

Junction-to-Ambient

––– 62

R

θJA

Junction-to-Ambient (PCB Mount)

––– 40

-55 to + 175

300 (1.6mm from case )

10 lbf

in (1.1N m)

80

0.53

± 16

Max.

51

36

204

110

78

See Fig.12a, 12b, 15, 16

PD - 95539A

IRLZ44Z/S/LPbF

2 www.irf.com

S

D

G

El

ectr

i

ca

l Ch

aracter

i

st

i

cs

@ T

J

=

2

5

°C (

un

l

ess

ot

h

erw

i

se

spec

ifi

e

d)

Parameter Min. T

y

p. Max. Units

V

(BR)DSS

Drain-to-Source Breakdown Volta

g

e55––––––V

∆V

(BR)DSS

/

∆T

J

Breakdown Volta

g

e Temp. Coefficient ––– 0.05 ––– V/°C

R

DS(on)

Static Drain-to-Source On-Resistance ––– 11 13.5

m

Ω

––– ––– 20

m

Ω

––– ––– 22.5

m

Ω

V

GS(th)

Gate Threshold Volta

g

e 1.0 ––– 3.0 V

g

fs Forward Transconductance 27 ––– ––– V

I

DSS

Drain-to-Source Leaka

g

e Current ––– ––– 20 µA

––– ––– 250

I

GSS

Gate-to-Source Forward Leaka

g

e ––– ––– 200 nA

Gate-to-Source Reverse Leaka

g

e ––– ––– -200

Q

g

Total Gate Char

g

e ––– 24 36

Q

gs

Gate-to-Source Char

g

e ––– 7.5 ––– nC

Q

gd

Gate-to-Drain ("Miller") Char

g

e–––12–––

t

d(on)

Turn-On Dela

y

Time ––– 14 –––

t

r

Rise Time ––– 160 –––

t

d(off)

Turn-Off Dela

y

Time ––– 25 ––– ns

t

f

Fall Time ––– 42 –––

L

D

Internal Drain Inductance ––– 4.5 ––– Between lead,

nH 6mm (0.25in.)

L

S

Internal Source Inductance ––– 7.5 ––– from packa

g

e

and center of die contact

C

iss

Input Capacitance ––– 1620 –––

C

oss

Output Capacitance ––– 230 –––

C

rss

Reverse Transfer Capacitance ––– 130 ––– pF

C

oss

Output Capacitance ––– 860 –––

C

oss

Output Capacitance ––– 180 –––

C

oss

eff.

Effective Output Capacitance ––– 280 –––

Source-Drain Ratin

g

s and Characteristics

Parameter Min. T

y

p. Max. Units

I

S

Continuous Source Current ––– ––– 51

(Body Diode) A

I

SM

Pulsed Source Current ––– ––– 204

(

Bod

y

Diode

)

V

SD

Diode Forward Volta

g

e––––––1.3V

t

rr

Reverse Recover

y

Time –––2132ns

Q

rr

Reverse Recover

y

Char

g

e ––– 16 24 nC

t

on

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Conditions

V

GS

= 5.0V

V

GS

= 0V

V

DS

= 25V

ƒ = 1.0MHz

MOSFET symbol

showing the

integral reverse

p-n junction diode.

T

J

= 25°C, I

S

= 31A, V

GS

= 0V

T

J

= 25°C, I

F

= 31A, V

DD

= 28V

di/dt = 100A/µs

Conditions

V

GS

= 0V, I

D

= 250µA

Reference to 25°C, I

D

= 1mA

V

GS

= 10V, I

D

= 31A

V

DS

= V

GS

, I

D

= 250µA

V

DS

= 55V, V

GS

= 0V

V

DS

= 55V, V

GS

= 0V, T

J

= 125°C

V

GS

= 0V, V

DS

= 0V to 44V

V

GS

= 5.0V

V

DD

= 50V

I

D

= 31A

R

G

= 7.5 Ω

V

GS

= 5.0V, I

D

= 30A

V

GS

= 4.5V, I

D

= 15A

V

GS

= 0V, V

DS

= 1.0V, ƒ = 1.0MHz

V

GS

= 0V, V

DS

= 44V, ƒ = 1.0MHz

V

DS

= 25V, I

D

= 31A

I

D

= 31A

V

DS

= 44V

V

GS

= 16V

V

GS

= -16V

IRLZ44Z/S/LPbF

www.irf.com 3

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

Fig 4. Typical Forward Transconductance

Vs. Drain Current

0 1020304050

I

D,

Drain-to-Source Current (A)

0

20

40

60

G

f

s

,

F

o

r

w

a

r

d

T

r

a

n

s

c

o

n

d

u

c

t

a

n

c

e

(

S

)

T

J

= 25°C

T

J

= 175°C

V

DS

= 10V

380µs PULSE WIDTH

0.1 1 10 100

V

DS

, Drain-to-Source Voltage (V)

0.1

1

10

100

1000

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

≤

60µs PULSE WIDTH

Tj = 25°C

3.0V

VGS

TOP 15V

10V

8.0V

5.0V

4.5V

4.0V

3.5V

BOTTOM 3.0V

0.1 1 10 100

V

DS

, Drain-to-Source Voltage (V)

1

10

100

1000

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

≤

60µs PULSE WIDTH

Tj = 175°C

3.0V

VGS

TOP 15V

10V

8.0V

5.0V

4.5V

4.0V

3.5V

BOTTOM 3.0V

2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0

V

GS

, Gate-to-Source Voltage (V)

1.0

10.0

100.0

1000.0

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

Α

)

V

DS

= 20V

≤

60µs PULSE WIDTH

T

J

= 25°C

T

J

= 175°C

IRLZ44ZPBF

IRLZ44ZPBF

Products related to this Datasheet