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IRLZ44ZPBF
P1-P3
P4-P6
P7-P9
P10-P12
IRLZ44Z/S/LPbF
4
www.irf.com
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
1
10
100
V
DS
, D
rain-
to-
Source V
olt
age (V)
0
500
1000
1500
2000
2500
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Coss
Crss
Ciss
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHO
RT
ED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
0
1
02
03
04
05
0
Q
G
Tot
al G
ate Char
ge (nC)
0
2
4
6
8
10
12
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 44V
VDS= 28
V
VDS= 11
V
I
D
= 31A
0.2
0.6
1.0
1.4
1.8
V
SD
, S
ource-t
o-Dr
ain V
olt
age (V)
0.1
1.0
10.0
100.0
1000.0
I
S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
T
J
= 25°
C
T
J
= 175°
C
V
GS
= 0V
1
10
100
1000
V
DS
, D
rain-
toS
ource Vol
tage (
V)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
Tc =
25°C
Tj
= 175°
C
Si
ngle P
ulse
1msec
10msec
OPERATION IN THIS AREA
LIM
ITED BY R
DS
(on)
100µsec
IRLZ44Z/S/LPbF
www.irf.com
5
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10.
Normalized On-Resistance
Vs. Temperature
25
50
75
100
125
150
175
T
J
, Junct
ion T
emperat
ure (°
C)
0
10
20
30
40
50
60
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
1
, R
ectangul
ar Pul
se Durat
ion (
sec)
0.001
0.01
0.1
1
10
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
C
)
0.20
0.10
D =
0.50
0.02
0.01
0.05
SINGLE PUL
SE
( THERMAL RESPO
NSE )
Notes
:
1. Du
ty
Fac
to
r D = t1/t2
2. P
eak Tj
= P
dm x Zthj
c + T
c
Ri (°C/W)
τ
i (sec)
0.736 0.000345
0.687 0.00147
0.449 0.007058
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
τ
3
τ
3
R
1
R
1
R
2
R
2
R
3
R
3
τ
τ
C
Ci
i
/
Ri
Ci=
τ
i
/
Ri
-60
-40
-20
0
20
40
60
80
100
120
140
160
180
T
J
, Junct
ion T
emperat
ure (°
C)
0.5
1.0
1.5
2.0
2.5
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
I
D
= 30A
V
GS
= 5.
0V
IRLZ44Z/S/LPbF
6
www.irf.com
Q
G
Q
GS
Q
GD
V
G
Charge
10 V
Fig 13b.
Gate Charge Test Circuit
Fig 13a.
Basic Gate Charge Waveform
Fig 12c.
Maximum Avalanche Energy
Vs. Drain Current
Fig 12b.
Unclamped Inductive Waveforms
Fig 12a.
Unclamped Inductive Test Circuit
t
p
V
(BR)DSS
I
AS
Fig 14.
Threshold Voltage Vs. Temperature
R
G
I
AS
0.01
Ω
t
p
D.
U
.T
L
V
DS
+
-
V
DD
DRI
V
ER
A
15V
20V
V
GS
1K
VC
C
DUT
0
L
25
50
75
100
125
150
175
St
arti
ng T
J
, Junct
ion T
emperat
ure (°
C)
0
80
160
240
320
E
A
S
,
S
i
n
g
l
e
P
u
l
s
e
A
v
a
l
a
n
c
h
e
E
n
e
r
g
y
(
m
J
)
I
D
TOP
3.7
A
5.7
A
BOTTOM
31A
-75
-50
-2
5
0
25
50
75
100
125
150
175
T
J
, T
emperat
ure ( °
C )
0.5
1.0
1.5
2.0
2.5
3.0
V
G
S
(
t
h
)
G
a
t
e
t
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
(
V
)
I
D
= 250µA
P1-P3
P4-P6
P7-P9
P10-P12
IRLZ44ZPBF
Mfr. #:
Buy IRLZ44ZPBF
Manufacturer:
Infineon / IR
Description:
MOSFET MOSFT 55V 51A 24nC 13.5mOhm LogLvAB
Lifecycle:
New from this manufacturer.
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