TSM4NC50CP ROG Datasheet TSM4NC50CP ROG | P1-P3

TSM4NC50CP

Taiwan Semiconductor

1 Version: A1609

N-Channel Power MOSFET

500V, 4A, 2.7Ω

FEATURES

● 100% UIS and Rg tested

● Advanced planar process

● Compliant to RoHS Directive 2011/65/EU and in

accordance to WEEE 2002/96/EC

● Halogen-free according to IEC 61249-2-21

KEY PERFORMANCE PARAMETERS

PARAMETER

VALUE

UNIT

V

DS

500

V

R

DS(on)

(max)

2.7

Ω

Q

g

12

nC

APPLICATIONS

● AC/DC LED Lighting

● Power Supply

● Charger

TO-252 (DPAK)

Notes: MSL 3 (Moisture Sensitivity Level) per J-STD-020

ABSOLUTE MAXIMUM RATINGS (T

A

= 25°C unless otherwise noted)

PARAMETER

SYMBOL

Limit

UNIT

Drain-Source Voltage

V

DS

500

V

Gate-Source Voltage

V

GS

±20

V

Continuous Drain Current

(Note 1)

T

C

= 25°C

I

D

4

A

T

C

= 100°C

2.5

Pulsed Drain Current

(Note 2)

I

DM

16

A

Total Power Dissipation @ T

C

= 25°C

P

DTOT

83

W

Single Pulse Avalanche Energy

(Note 3)

E

AS

78.4

mJ

Single Pulse Avalanche Current

(Note 3)

I

AS

2.8

A

Operating Junction and Storage Temperature Range

T

J

, T

STG

- 55 to +150

°C

THERMAL PERFORMANCE

PARAMETER

SYMBOL

Limit

UNIT

Junction to Case Thermal Resistance

R

ӨJC

1.5

°C/W

Junction to Ambient Thermal Resistance

R

ӨJA

62

°C/W

Thermal Performance Note: R

ӨJA

is the sum of the junction-to-case and case-to-ambient thermal resistances. The case-

thermal reference is defined at the solder mounting surface of the drain pins. R

ӨJA

is guaranteed by design while R

ӨCA

is

determined by the user’s board design. R

ӨJA

shown below for single device operation on FR-4 PCB in still air.

TSM4NC50CP

Taiwan Semiconductor

2 Version: A1609

ELECTRICAL SPECIFICATIONS (T

A

= 25°C unless otherwise noted)

PARAMETER

CONDITIONS

SYMBOL

MIN

TYP

MAX

UNIT

Static

Drain-Source Breakdown Voltage

V

GS

= 0V, I

D

= 250µA

BV

DSS

500

--

V

Gate Threshold Voltage

V

DS

= V

GS

, I

D

= 250µA

V

GS(TH)

2

2.2

3

V

Gate Body Leakage

V

GS

= ±20V, V

DS

= 0V

I

GSS

--

±100

nA

Zero Gate Voltage Drain Current

V

DS

= 500V, V

GS

= 0V

I

DSS

--

1

µA

Drain-Source On-State Resistance

(Note 4)

V

GS

= 10V, I

D

=1.7A

R

DS(on)

--

2.4

2.7

Ω

Dynamic

(Note 5)

Total Gate Charge

V

DS

= 400V, I

D

= 3.4A,

V

GS

= 10V

Q

g

--

12

--

nC

Gate-Source Charge

Q

gs

--

2.2

--

Gate-Drain Charge

Q

gd

--

4.4

--

Input Capacitance

V

DS

= 50V, V

GS

= 0V,

f = 1.0MHz

C

iss

--

453

--

pF

Output Capacitance

C

oss

--

27

--

Reverse Transfer Capacitance

C

rss

--

1

--

Gate Resistance

f = 1.0MHz

R

g

--

2.6

5.2

Ω

Switching

(Note 6)

Turn-On Delay Time

V

DD

= 250V, R

G

= 5Ω,

I

D

= 3.4A, V

GS

= 10V

t

d(on)

--

5.4

--

ns

Turn-On Rise Time

t

r

--

18.4

--

Turn-Off Delay Time

t

d(off)

--

12.4

--

Turn-Off Fall Time

t

f

--

19.6

--

Source-Drain Diode

Forward Voltage

(Note 4)

I

S

= 3.4A, V

GS

= 0V

V

SD

--

1.3

V

Reverse Recovery Time

I

S

= 3.4A

dI

F

/dt = 100A/μs

t

rr

--

233

--

ns

Reverse Recovery Charge

Q

rr

--

0.84

--

μC

Notes:

1. Current limited by package

2. Pulse width limited by the maximum junction temperature

3. L = 20mH, I

AS

= 2.8A, V

DD

= 50V, R

G

= 25Ω, Starting T

J

= 25

o

C

4. Pulse test: PW ≤ 300µs, duty cycle ≤ 2%

5. For DESIGN AID ONLY, not subject to production testing.

6. Switching time is essentially independent of operating temperature.

ORDERING INFORMATION

PART NO.

PACKAGE

PACKING

TSM4NC50CP ROG

TO-252 (DPAK)

2,500pcs / 13” Reel

TSM4NC50CP

Taiwan Semiconductor

3 Version: A1609

CHARACTERISTICS CURVES

(T

A

= 25°C unless otherwise noted)

Output Characteristics

Transfer Characteristics

On-Resistance vs. Drain Current

Gate-Source Voltage vs. Gate Charge

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-Source Voltage

I

D

, Drain Current (A)

V

GS

, Gate to Source Voltage (V)

I

D

, Drain Current (A)

V

DS

, Drain to Source Voltage (V)

R

DS(ON)

, Drain-Source On-Resistance (Ω)

I

D

, Drain Current (A)

V

GS

, Gate to Source Voltage (V)

Q

g

, Gate Charge (nC)

R

DS(on)

, Drain-Source On-Resistance

(Normalized)

T

J

, Junction Temperature (°C)

R

DS(on)

, Drain-Source On-Resistance (Ω)

V

GS

, Gate to Source Voltage (V)

0

1

2

3

4

0 2 4 6 8 10 12 14

V

GS

=10V

V

GS

=9V

V

GS

=8V

V

GS

=7V

V

GS

=6V

V

GS

=5V

V

GS

=4V

0

0.5

1

1.5

2

2.5

3

3.5

4

0 0.5 1 1.5 2 2.5 3 3.5 4

V

GS

=10V

2

2.1

2.2

2.3

2.4

2.5

2.6

2.7

2.8

2.9

3

4 5 6 7 8 9 10

I

D

=1.7A

0

2

4

6

8

10

0 3 6 9 12 15

V

DS

=400V

I

D

=3.4A

0

0.5

1

1.5

2

2.5

3

-75 -50 -25 0 25 50 75 100 125 150

V

GS

=10V

I

D

=1.7A

0

1

2

3

4

0 2 4 6 8

25

℃

-55

℃

150

℃

TSM4NC50CP ROG

TSM4NC50CP ROG

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