6.42
IDT70V261S/L
High-Speed 16K x 16 Dual-Port Static RAM with Interrupt Industrial and Commercial Temperature Ranges
4
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range
(VCC = 3.3V ± 0.3v)
Absolute Maximum Ratings
(1)
Maximum Operating Temperature
and Supply Voltage
(1)
Capacitance
(1)
(TA = +25°C, f = 1.0MHz)
Recommended DC Operating
Conditions
(2)
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in
the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
2. V
TERM must not exceed Vcc + 0.3V for more than 25% of the cycle time or 10ns
maximum, and is limited to
< 20mA for the period of VTERM > Vcc + 0.3V.
NOTES:
1. This is the parameter T
A. This is the "instant on" case temperature.
NOTES:
1. V
IL > -1.5V for pulse width less than 10ns.
2. V
TERM must not exceed Vcc + 0.3V.
NOTES:
1. This parameter is determined by device characterization but is not production
tested. TQFP package only.
2. 3dV represents the interpolated capacitance when the input and output signals
switch from 0V to 3V or from 3V to 0V.
NOTE:
1. At V
CC = 2.0V, input leakages are undefined.
Symbol Rating Commercial
& Industrial
Unit
V
TERM
(2 )
Terminal Voltage
with Respe ct
to GND
-0.5 to +4.6 V
T
BIAS
Temperature
Und er Bias
-55 to +125
o
C
T
STG
Storage
Temperature
-65 to +150
o
C
I
OUT
DC Output
Current
50 mA
30 40 tbl 04
Symbol Parameter Conditions
(2)
Max. Unit
C
IN
Input Capacitance V
IN
= 3dV 9 pF
C
OUT
Output Capacitance V
OUT
= 3dV 10 pF
3040 tbl 07
Grade
Ambient Temperature
GND Vcc
Commercial 0
O
C to +70
O
C0V3.3V
+
0.3
Industrial -40
O
C to +85
O
C0V3.3V
+
0.3
30 40 tb l 05
Symbol Parameter Min. Typ. Max. Unit
V
CC
Supply Voltage 3.0 3.3 3.6 V
GND Ground 0 0 0 V
V
IH
Input High Voltage 2.2
____
V
CC
+0.3
(2 )
V
V
IL
Input Low Voltage -0.3
(1 )
____
0.8 V
3040 tbl 06
Symbol Parameter Test Conditions
70V261S 70V261L
UnitMin. Max. Min. Max.
|I
LI
| Input Leakage Current
(1 )
V
CC
= 3.6V, V
IN
= 0V to V
CC
___
10
___
A
|I
LO
| Output Leakage Current
CE = V
IH
, V
OUT
= 0V to V
CC
___
10
___
A
V
OL
Output Low Voltage I
OL
= +4mA
___
0.4
___
0.4 V
V
OH
Output Hig h Voltage I
OH
= -4mA 2.4
___
2.4
___
V
3040 tbl 08
6.42
IDT70V261S/L
High-Speed 16K x 16 Dual-Port Static RAM with Interrupt Industrial and Commercial Temperature Ranges
5
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range
(1)
(VCC = 3.3V ± 0.3V)
NOTES:
1. 'X' in part number indicates power rating (S or L)
2. V
CC = 3.3V, TA = +25°C, and are not production tested. ICCDC = 80mA (Typ.)
3. At f = f
MAX, address and control lines (except Output Enable) are cycling at the maximum frequency read cycle of 1/tRC, and using “AC Test Conditions” of input levels of
GND to 3V.
4. f = 0 means no address or control lines change.
5. Port "A" may be either left or right port. Port "B" is the opposite from port "A".
70V261X25
Com'l
& Ind
70V261X35
Com'l Only
70V261X55
Com'l Only
Symbol Parameter Test Condition Version Typ.
(2 )
Max. Typ.
(2)
Max. Typ.
(2 )
Max. Unit
I
CC
Dynamic Operating
Current
(Both Ports Active)
CE = V
IL
, Outputs Disabled
SEM = V
IH
f = f
MAX
(3)
COM'L S
L
100
100
170
140
90
90
140
120
90
90
140
120
mA
IND S
L
100
100
200
185
____
____
____
____
____
____
____
____
mA
I
SB1
Standby Current
(Both Ports - TTL
Leve l Inputs)
CE
R
= CE
L
= V
IH
SEM
R
= SEM
L
= V
IH
f = f
MAX
(3)
COM'L S
L
14
12
30
24
12
10
30
24
12
10
30
24
mA
IND S
L
14
12
60
50
____
____
____
____
____
____
____
____
mA
I
SB2
Standby Current
(One Port - TTL
Leve l Inputs)
CE
"A"
= V
IL
and CE
"B"
= V
IH
(5)
Active Port Outputs Disabled,
f=f
MAX
(3)
SEM
R
= SEM
L
= V
IH
COM'L S
L
50
50
95
85
45
45
87
75
45
45
87
75
mA
IND S
L
50
50
130
105
____
____
____
____
____
____
____
____
mA
I
SB3
Full Standby Current
(Both Ports -
CMOS Level Inputs)
Both Ports CE
L
and
CE
R
> V
CC
- 0.2V,
V
IN
> V
CC
- 0.2V or
V
IN
< 0.2V, f = 0
(4)
SEM
R
= SEM
L
> V
CC
- 0.2V
COM'L S
L
1.0
0.2
6
3
1.0
0.2
6
3
1.0
0.2
6
3
mA
IND S
L
1.0
0.2
6
3
____
____
____
____
____
____
____
____
mA
I
SB4
Full Standby Current
(One Port -
CMOS Level Inputs)
CE
"A"
< 0.2V and
CE
"B"
> V
CC
- 0.2V
(5)
SEM
R
= SEM
L
> V
CC
- 0.2V
V
IN
> V
CC
- 0.2V or V
IN
< 0.2V
Active Port Outputs Disabled,
f = f
MAX
(3)
COM'L S
L
60
60
90
80
55
55
85
74
55
55
85
74
mA
IND S
L
60
60
125
90
____
____
____
____
____
____
____
____
mA
3040 tbl 09
6.42
IDT70V261S/L
High-Speed 16K x 16 Dual-Port Static RAM with Interrupt Industrial and Commercial Temperature Ranges
6
AC Test Conditions
Figure 1. AC Output Test Load
NOTES:
1. Transition is measured 0mV from Low- or High-impedance voltage with Output Test Load (Figure 2).
2. This parameter is guaranteed by device characterization, but is not production tested.
3. To access RAM, CE = V
IL and SEM = VIH. To access semaphore, CE = VIH and SEM = VIL.
4. 'X' in part number indicates power rating (S or L).
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage Range
(4)
Timing of Power-Up Power-Down
CE
3040 drw 05
t
PU
I
CC
I
SB
t
PD
,
Input Pulse Levels
Input Rise/Fall Times
Input Timing Reference Levels
Output Reference Levels
Output Load
GND to 3.0V
3ns Max.
1.5V
1.5V
Figures 1 and 2
3040 tbl 10
3040 drw 04
590
30pF
435
3.3V
DATA
OUT
BUSY
INT
590
5pF*
435
3.3V
DATA
OUT
3040 drw 03
Figure 2. Output Test Load
(for tLZ, tHZ, tWZ, tOW)
* Including scope and jig.
70V261X25
Com'l
& Ind
70V261X35
Com'l Only
70V261X55
Com'l Only
UnitSymbol Parameter Min.Max.Min.Max.Min.Max.
READ CYCLE
t
RC
Read Cycle Time 25
____
35
____
55
____
ns
t
AA
Address Access Time
____
25
____
35
____
55 ns
t
ACE
Chip Enable Access Time
(3)
____
25
____
35
____
55 ns
t
ABE
Byte Enable Access Time
(3)
____
25
____
35
____
55 ns
t
AOE
Output Enable Access Time
____
15
____
20
____
30 ns
t
OH
Output Hold from Address Change 3
____
3
____
3
____
ns
t
LZ
Output Low-Z Time
(1,2)
3
____
3
____
3
____
ns
t
HZ
Output High-Z Time
(1,2)
____
15
____
20
____
25 ns
t
PU
Chip Enable to Power Up Time
(2 )
0
____
0
____
0
____
ns
t
PD
Chip Disable to Power Down Time
(2 )
____
25
____
35
____
50 ns
t
SOP
Semaphore Flag Update Pulse (OE or SEM)15
____
15
____
15
____
ns
t
SAA
Semaphore Address Access Time
____
35
____
45
____
65 ns
3040 tbl 11

70V261S25PF

Mfr. #:
Manufacturer:
IDT
Description:
SRAM 16Kx16,3.3V DUAL- PORT RAM w/INT
Lifecycle:
New from this manufacturer.
Delivery:
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