OP183GSZ-REEL Datasheet OP183GSZ, OP183GSZ-REEL | P4-P6

OP183

Rev. D | Page 4 of 16

ELECTRICAL CHARACTERISTICS @ V

S

= 3 V

T

A

= 25°C, unless otherwise noted.

Table 2.

Parameter Symbol Conditions Min Typ Max Unit

INPUT CHARACTERISTICS

Offset Voltage V

OS

V

CM

= 1.5 V, V

OUT

= 1.5 V,

0.3 1.0 mV

−40°C ≤ T

A

≤ +85°C

1.25 mV

Input Bias Current I

B

V

CM

= 1.5 V, V

OUT

= 1.5 V,

350 600 nA

−40°C ≤ T

A

≤ +85°C

750 nA

Input Offset Current I

OS

V

CM

= 1.5 V, V

OUT

= 1.5 V,

nA

−40°C ≤ T

A

≤ +85°C

11 ±50 nA

Input Voltage Range

0

1.5 V

Common-Mode Rejection Ratio CMRR V

CM

= 0 V to 1.5 V,

−40°C ≤ T

A

≤ +85°C 70 103

dB

Large Signal Voltage Gain A

VO

R

L

= 2 kΩ, 0.2 ≤ V

O

≤ 1.8 V 100 260

V/mV

OUTPUT CHARACTERISTICS

Output Voltage High V

OH

R

L

= 2 kΩ to GND 2.0 2.25

V

Output Voltage Low V

OL

R

L

= 2 kΩ to GND

90 125 mV

Short-Circuit Limit I

SC

Source

25

mA

Sink

30

mA

POWER SUPPLY

Power Supply Rejection Ratio PSRR V

S

= 2.5 V to 3.5 V,

−40°C ≤ T

A

≤ +85°C 60 113

dB

Supply Current/Amplifier I

SY

−40°C ≤ T

A

≤ +85°C, V

O

= 1.5 V

1.2 1.5 mA

DYNAMIC PERFORMANCE

Gain Bandwidth Product GBP

5

MHz

NOISE PERFORMANCE

Voltage Noise Density e

n

f = 1 kHz, V

CM

= 1.5 V

10

nV/√Hz

OP183

Rev. D | Page 5 of 16

ELECTRICAL CHARACTERISTICS @ V

S

= ±15 V

T

A

= 25°C, unless otherwise noted.

Table 3.

Parameter Symbol Conditions Min Typ Max Unit

INPUT CHARACTERISTICS

Offset Voltage V

OS

0.01 1.0 mV

−40°C ≤ T

A

≤ +85°C

1.25 mV

Input Bias Current I

B

300 600 nA

−40°C ≤ T

A

≤ +85°C

400 750 nA

Input Offset Current I

OS

−40 ≤ T

A

≤ +85°C

11 ±50 nA

Input Voltage Range

−15

+13.5 V

Common-Mode Rejection Ratio CMRR V

CM

= −15 V to +13.5 V,

–40°C ≤ TA ≤ +85°C 70 86

dB

Large Signal Voltage Gain A

VO

R

L

= 2 kΩ 100 1000

V/mV

Offset Voltage Drift ΔV

OS

/ΔT

3

μV/°C

Bias Current Drift ΔI

B

/ΔT

−1.6

nA/°C

Long-Term Offset Voltage V

OS

Note

1

1.5 mV

OUTPUT CHARACTERISTICS

Output Voltage High V

OH

R

L

= 2 kΩ to GND, −40°C ≤ T

A

≤ +85°C

13.9 14.1

V

Output Voltage Low V

OL

R

L

= 2 kΩ to GND, −40°C ≤ T

A

≤ +85°C

−14.05 −13.9 V

Short-Circuit Limit I

SC

Source

30

mA

Sink

50

mA

Open-Loop Output Impedance Z

OUT

f = 1 MHz, A

V

= +1

15

Ω

POWER SUPPLY

Power Supply Rejection Ratio PSRR V

S

= ± 2.5 V to ± 18 V,

−40°C ≤ T

A

≤ +85°C 70 112

dB

Supply Current/Amplifier I

SY

V

S

= ±18 V, V

O

= 0 V,

−40°C ≤ T

A

≤ +85°C

1.2 1.75 mA

Supply Voltage Range V

S

3

±18 V

DYNAMIC PERFORMANCE

Slew Rate SR R

L

= 2 kΩ 10 15

V/μs

Full Power Bandwidth BW

p

1% Distortion

50

kHz

Settling Time t

S

To 0.01%

1.5

μs

Gain Bandwidth Product GBP

5

MHz

Phase Margin фm

56

Degrees

NOISE PERFORMANCE

Voltage Noise e

n

p-p 0.1 Hz to 10 Hz

2

μV p-p

Voltage Noise Density e

n

f = 1 kHz

10

nV/√Hz

Current Noise Density i

n

0.4

pA/√Hz

1

Long-term offset voltage is guaranteed by a 1,000 hour life test performed on three independent lots at 125°C, with an LTPD of 1.3.

OP183

Rev. D | Page 6 of 16

ABSOLUTE MAXIMUM RATINGS

Table 4.

Parameter Rating

Supply Voltage ±18 V

Input Voltage ±18 V

Differential Input Voltage

1

±7 V

Output Short-Circuit Duration to GND Indefinite

Storage Temperature Range

S Package −65°C to +150°C

Operating Temperature Range

OP183 −40°C to +85°C

Junction Temperature Range

S Package −65°C to +150°C

Lead Temperature Range (Soldering 60 sec) 300°C

1

For supply voltages less than ±7 V, the absolute maximum input voltage is

equal to the supply voltage. Maximum input current should not exceed

2 mA.

Stresses above those listed under Absolute Maximum Ratings

may cause permanent damage to the device. This is a stress

rating only; functional operation of the device at these or any

other conditions above those indicated in the operational

section of this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may affect

device reliability.

Absolute maximum ratings apply to packaged parts, unless

otherwise noted.

Table 5.

Package Type θ

JA

1

θ

JC

Units

8-Lead SOIC (S) 158 43 °C/W

1

θ

JA

is specified for worst-case conditions; in other words, θ

JA

is specified for

device soldered in circuit board for SOIC packages.

ESD CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on

the human body and test equipment and can discharge without detection. Although this product features

proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy

electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance

degradation or loss of functionality.

OP183GSZ-REEL

OP183GSZ-REEL

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