DocID025011 Rev4 3/13
STTH30AC06C Characteristics
Table 5. Dynamic characteristics (per diode)
Symbol Parameter
Test conditions
Min. Typ. Max. Unit
t
rr
Reverse recovery time T
j
= 25 °C
I
F
= 0.5 A, I
rr
= 0.25 A, I
R
= 1 A - 30
ns
I
F
= 1 A, V
R
= 30 V, dI
F
/dt = 50 A/µs - 40 55
I
RM
Reverse recovery current T
j
= 125 °C
I
F
= 15 A, V
R
= 400 V,
dI
F
/dt = 100 A/µs
-45.5A
t
fr
Forward recovery time
T
j
= 25 °C
I
F
= 15 A, V
FR
= 1.9 V,
dI
F
/dt = +100 A/µs
- 100 ns
V
FP
Forward recovery voltage - 2.5 V
Figure 1. Average forward power dissipation
versus average forward current (per diode)
Figure 2. Forward voltage drop versus forward
current (typical values, per diode)
0
5
10
15
20
25
30
0 2 4 6 8 101214161820
P
F
(
AV
)
(
W
)
d = 0.05
d = 0.2
d = 0.1
d =1
d = 0.5
T
d
=tp/T
tp
I
F(AV)
(A)
I
F
(A)
0.1
1.0
10.0
100.0
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8
V
F
(V)
T = 25 °C
j
T = 150
°
C
j
Figure 3. Forward voltage drop versus forward
current (maximum values, per diode)
Figure 4. Relative variation of thermal
impedance, junction to case, versus pulse
duration (TO3P-3L, TO247 LL)
0.1
1.0
10.0
100.0
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
V
F
(V)
T = 25 °C
j
I
F
(A)
T = 150
°
C
j
Z
t
h(j-c)
/R
t
h(j-c)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-04 1.E-03 1.E-02 1.E-01 1.E+00
TO3P-3L / TO-247 LL
Single pulse
t (s)
P
