Characteristics STTH30AC06C
4/13 DocID025011 Rev4
Figure 5. Relative variation of thermal
impedance, junction to case, versus pulse
duration (TO-3PF)
Figure 6. Peak reverse recovery current versus
dI
F
/dt (typical values, per diode)
Z
t
h(j-c)
/R
t
h(j-c)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02
t (s)
P
Single pulse
TO
-
3PF
0
4
8
12
16
0 50 100 150 200 250 300 350 400 450 500
I
RM
(A)
I
F
= 15 A
V
R
= 400 V
T
j
= 125
°
C
dl
F
/dt(A/µs)
Figure 7. Reverse recovery time versus dI
F
/dt
(typical values, per diode)
Figure 8. Reverse recovery charges versus
dI
F
/dt (typical values, per diode)
t
RR
(ns)
0
50
100
150
200
250
300
350
400
0 50 100 150 200 250 300 350 400 450 500
dl
F
/dt(A/µs)
I
F
= 15 A
V
R
= 400 V
T
j
= 125
°
C
0
100
200
300
400
500
600
700
800
0 50 100 150 200 250 300 350 400 450 500
I
F
= 15 A
V
R
= 400 V
T
j
= 125
°
C
dl
F
/dt(A/µs)
Q
RR
(
n
C
)
Figure 9. Reverse recovery softness factor
versus dI
F
/dt (typical values, per diode)
Figure 10. Relative variations of dynamic
parameters versus junction temperature
0.0
0.5
1.0
1.5
2.0
0 50 100 150 200 250 300 350 400 450 500
dl
F
/dt(A/µs)
I
F
= 15 A
V
R
= 400 V
T
j
= 125
°
C
S
FACTOR
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
25 50 75 100 125
I
RM
S
FACTOR
Q
RR
I
F
= 15 A
V
R
= 400 V
Reference: T
j
= 125
°
C
T
j
(°C)
