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STW80NF06

P1-P3P4-P6P7-P9P10-P12P13-P14
May 2007 Rev 5 1/14
14
STP80NF06 - STB80NF06
STW80NF06
N-channel 60V - 0.0065Ω - 80A TO-220/D
2
PA K /TO -247
STripFET II™ Power MOSFET
Features
■ 100% avalanche tested
■ Low threshold drive
Description
This Power MOSFET is the latest development of
STMicroelectronics unique "Single Feature
Size™" strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
Applications
■ Switching application
Internal schematic diagram
Type V
DSS
R
DS(on)
I
D
STB80NF06 60V <0.008Ω 80A
STP80NF06 60V <0.008Ω 80A
STW80NF06 60V <0.008Ω 80A
TO-220
1
2
3
D²PAK
TO-247
1
3
www.st.com
Order codes
Part number Marking Package Packaging
STB80NF06T4 B80NF06 D²PAK Tape & reel
STP80NF06 P80NF06 TO-220 Tube
STW80NF06 W80NF06 TO-247 Tube
Contents STP80NF06 - STB80NF06 - STW80NF06
2/14
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
STP80NF06 - STB80NF06 - STW80NF06 Electrical ratings
3/14
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
V
DS
Drain-source voltage (v
gs
= 0) 60 V
V
GS
Gate- source voltage ±20 V
I
D
(1)
1. Current limited by wire bonding
Drain current (continuous) at T
C
= 25°C 80 A
I
D
Drain current (continuous) at T
C
= 100°C 80 A
I
DM
(2)
2. Pulse width limited by safe operating area
Drain current (pulsed) 320 A
P
TOT
Total dissipation at T
C
= 25°C 300 W
Derating factor 2 W/°C
E
AS
(3)
3. Starting T
j
= 25°C, I
D
= 40A, V
DD
=40V
Single pulse avalanche energy 870 mJ
T
stg
Storage temperature
– 65 to 175
175
°C
T
j
Max. operating junction temperature
Table 2. Thermal data
R
thj-case
Thermal resistance junction-case Max 0.5 °C/W
R
thj-a
Thermal resistance junction-ambient Max 62.5 °C/W
T
l
Maximum lead temperature for soldering
purpose
300 °C
P1-P3P4-P6P7-P9P10-P12P13-P14

STW80NF06

Mfr. #:
Buy STW80NF06
Manufacturer:
STMicroelectronics
Description:
MOSFET N-CH 60V 80A TO-247
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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