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STW80NF06

P1-P3P4-P6P7-P9P10-P12P13-P14
Electrical characteristics STP80NF06 - STB80NF06 - STW80NF06
4/14
2 Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 3. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
Breakdown voltage
I
D
= 250 µA, V
GS
= 0 60 V
I
DSS
Zero gate voltage
Drain current (V
GS
= 0)
V
DS
= Max rating 1 µA
V
DS
=Max rating,
T
C
=125°C
10 µA
I
GSS
Gate-body leakage
current (V
DS
= 0)
V
GS
= ±20V ±100 nA
V
GS(th)
Gate threshold voltage V
DS
= V
GS
, I
D
= 250µA 2 3 4 V
R
DS(on)
Static drain-source on
resistance
V
GS
= 10V, I
D
= 40A 0.0065 0.008 Ω
Table 4. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
g
fs
(1)
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Forward transconductance V
DS
= 2.5V
,
I
D
=18A 20 S
C
iss
Input capacitance
V
DS
= 25V, f = 1 MHz,
V
GS
= 0
3850 pF
C
oss
Output capacitance 800 pF
C
rss
Reverse transfer
capacitance
250 pF
Q
g
Total gate charge
V
DD
= 80V, I
D
= 80A,
V
GS
= 10V
115 150 nC
Q
gs
Gate-source charge 24 nC
Q
gd
Gate-drain charge 46 nC
Table 5. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
t
r
Turn-on delay time
Rise time
V
DD
= 27V, I
D
= 40A
R
G
=4.7Ω V
GS
= 10V
(see Figure 13)
25
85
ns
ns
t
d(off)
t
f
Turn-off-delay time
Fall time
V
DD
= 27V, I
D
= 40A,
R
G
=4.7Ω, V
GS
= 10V
(see Figure 13)
70
25
ns
ns
t
d(off)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
Vclamp =44V, I
D
=80A
R
G
=4.7Ω, V
GS
= 10V
(see Figure 15)
85
75
110
ns
ns
ns
STP80NF06 - STB80NF06 - STW80NF06 Electrical characteristics
5/14
Table 6. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max Unit
I
SD
Source-drain current 80 A
I
SDM
(1)
1. Pulse width limited by safe operating area.
Source-drain current (pulsed) 320 A
V
SD
(2)
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage I
SD
= 80A, V
GS
= 0 1.5 V
t
rr
Q
rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 80A, V
DD
= 50V
di/dt = 100A/µs,
T
j
= 150°C
(see Figure 15)
80
250
6.4
ns
nC
A
Electrical characteristics STP80NF06 - STB80NF06 - STW80NF06
6/14
2.1 Electrical characteristics (curves)
Figure 1. Safe operating area Figure 2. Thermal impedance
Figure 3. Output characteristics Figure 4. Transfer characteristics
Figure 5. Transconductance Figure 6. Static drain-source on resistance
P1-P3P4-P6P7-P9P10-P12P13-P14

STW80NF06

Mfr. #:
Buy STW80NF06
Manufacturer:
STMicroelectronics
Description:
MOSFET N-CH 60V 80A TO-247
Lifecycle:
New from this manufacturer.
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