Obsolete Product(s) - Obsolete Product(s)
STS4DNFS30 Electrical ratings
3/12
1 Electrical ratings
Table 1. Mosfet absolute maximum ratings
Symbol Parameter Value Unit
V
DS
Drain-source voltage (V
GS
= 0) 30 V
V
GS
Gate- source voltage ± 20 V
I
D
Drain current (continuous) at T
C
= 25°C 4.5 A
I
D
Drain current (continuous) at T
C
= 100°C 3.2 A
I
DM
(1)
1. Pulse width limited by safe operating area
Drain current (pulsed) 13 A
P
TOT
Total dissipation at T
C
= 25°C 2 W
Table 2. Schottky absolute maximum ratings
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 30 V
I
F(RMS)
RMS forward current 10 A
I
F(AV)
Average forward current
T
L
=125°C
δ=0.5
4A
I
FSM
Surge non repetitive forward current
tp=10ms
Sinusoidal
75 A
I
RRM
Repetitive peak reverse current
tp=2µs
F=1kHz
1A
I
RSM
Non repetitive peak reverse current tp=100µs 1 A
dv/dt Critical rate of rise of reverse voltage 10000 v/µs
Table 3. Thermal data
Symbol Parameter Value Unit
Rthj-amb Thermal resistance junction-amb Mosfet
(1)
1. Mounted on FR-4 board (steady state)
62.5 °C/W
T
stg
Storage temperature range Max -55 to 150 °C
T
j
Junction temperature -55 to 150 °C
Obsolete Product(s) - Obsolete Product(s)
